"$DoEalloyfluc" 修訂間的差異

出自 DDCC TCAD TOOL Manual
前往: 導覽搜尋
行 27: 行 27:
 
<big><big>'''Parameter Explanation'''</big></big> <br />
 
<big><big>'''Parameter Explanation'''</big></big> <br />
   
Nt : Carrier concerntration <math>(cm^{-3})</math><br />
+
Nt : Carrier concerntration. <math>(cm^{-3})</math><br />
   
Et : Depth of dos central and Ec/Ev <math>(eV)</math><br />
+
Et : Depth of dos central and Ec/Ev. <math>(eV)</math><br />
   
 
sigma : FWHM of the gaussian distribution. <math>(eV)</math>
 
sigma : FWHM of the gaussian distribution. <math>(eV)</math>

於 2017年8月15日 (二) 16:53 的修訂

Set gaussian-like density of state. This model usually use for organic material or energy disorder material.


Format

  • Type 1 is electron only
$DoEalloyfluc 
11 Nt Et σ
  • Type 2 is hole only
$DoEalloyfluc 
21 Nt Et σ
  • Type 3 is electron and hole 2 gaussian 1 for electron 1 for hole
$doealloyfluc 
31 Nt_e Et_e σ_e Nt_h Et_h σ_h

Where e means electron properties of DOS in this layer.

  • Type 4 is electron and hole 4 gaussian 2 for electron 2 for hole
$doealloyfluc
32 Nt_e1 Et_e1 σ_e1 Nt_e2 Et_e2 σ_e2 Nt_h1 Et_h1 σ_h1 Nt_h2 Et_h2 σ_h2

Where e1 means electron properties of DOS1 and h2 means hole properties of DOS2.


Parameter Explanation

Nt : Carrier concerntration. (cm^{-3})

Et : Depth of dos central and Ec/Ev. (eV)

sigma : FWHM of the gaussian distribution. (eV)