"$useevprofile" 修訂間的差異

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9.71E+05 8.42E+06 173
 
9.71E+05 8.42E+06 173
 
9.91E+05 8.36E+06 174
 
9.91E+05 8.36E+06 174
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  +
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[[$useevversusT]]

於 2024年3月14日 (四) 11:17 的最新修訂

If the user needs to use field dependent mobility profile, he has several way to achieve this. The first way is to call $usefieldmufunc , $useemufunc, $useemunfunc, $useemupfunc. However, for this one, you will need to write the code by yourself. The other way is to give the program a E versus velocity table files. And you need to setup the region $xend and $yend to decide which region to use this profile.
Note that his function current is only support Ex field for electron transport in x direction since this function is for FET transistor case. It does not support for holes, neither. When this function is called, other regions or unsupported direction such as Ey or holes will use the constant mobility model.


Format:

$useevprofile
E-versus-v_filename
N_{total} format_type
N_{sep}
Format_type:
1: 
2:
3: Two different segments, N_{sep} separaet this two segments 
N_{sep}: which column where the second segments starts
N_{total}: total column number 



File format of E-versus-v_filename:

Ex1_1~~~ V_1
Ex1_2~~~ V_2
Ex1_3~~~ V_3
....
....
.... to  N_{sep-1}
Ex2_{N_{sep}}~~~ V_{N_{sep}} 
Ex2_{N_{sep}+1}~~~ V_{N_{sep}+1} 
Ex2_{N_{sep}+2}~~~ V_{N_{sep}+2} 
....
....
 Ex2_{N_{total}}~~~ V_{N_{total}} 



For examples:

$useevprofile
mcalgan32-GaN-InGaN.inp.vfoc.res
174 3
131
$xend
89.9999e-04 116.000001e-4
$yend
4.2001e-04 4.000e-04

And the format of mcalgan32-GaN-InGaN.inp.vfoc.res would be

5.00E+02	5.15E+05  1
1.50E+03	1.66E+06  2
2.50E+03	2.76E+06  3
3.50E+03	3.80E+06  4
4.50E+03	4.74E+06  5
5.50E+03	5.57E+06  6
6.50E+03	6.58E+06  7  
...
...
... 
128500.00000 	2.52E+07  130
129500.00000 	2.53E+07  131
130500.00000 	2.51E+07  131
150500.00000 	2.46E+07  132
170500.00000 	2.24E+07  133
...
...
...
9.71E+05	8.42E+06   173
9.91E+05	8.36E+06   174


$useevversusT