"*-cb.res" 修訂間的差異
出自 DDCC TCAD TOOL Manual
Jameshuang (對話 | 貢獻) |
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'''<big><big>Format</big></big>''' |
'''<big><big>Format</big></big>''' |
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− | <math>Position</math> <math>E_{c}</math> <math>E_{v}</math> <math>E_{fn}</math> <math>E_{fp}</math> <math>n</math> <math>p</math> <math>J_{n}</math> <math>J_{p}</math> <math>R_{rad}</math> <math>R_{non}</math> <math>R_{auger}</math> <math>E_{b}</math> <math>E_{bh}</math> <math>G_{gen}</math> <math>{N_{d}}^+</math> <math>{N_{a}}^{-}</math> <math>R_{impact}</math> |
+ | <math>Position</math> <math>E_{c}</math> <math>E_{v}</math> <math>E_{fn}</math> <math>E_{fp}</math> <math>n</math> <math>p</math> <math>J_{n}</math> <math>J_{p}</math> <math>R_{rad}</math> <math>R_{non}</math> <math>R_{auger}</math> <math>E_{b}</math> <math>E_{bh}</math> <math>G_{gen}</math> <math>{N_{d}}^+</math> <math>{N_{a}}^{-}</math> <math>R_{impact}</math> <math> 1/u_{c}</math> <math> 1/u_{hh}</math> <math> 1/u_{lh}</math> <math> \vec{E}</math> <math> \mu_{n}</math> <math> \mu_{p} </math> <math> u_{c}</math> <math> u_{lh}</math> <math> u_{hh}</math> <math> N_{trap,effective}</math> <math> R_{stim}</math> <math> layer_num</math> |
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*<math>R_{impact}</math> : Impact ionization rate.<math>(cm^{-3}s^{-1})</math> |
*<math>R_{impact}</math> : Impact ionization rate.<math>(cm^{-3}s^{-1})</math> |
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+ | <math> 1/u_{c}</math> : effective electron quantum potential |
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+ | <math> 1/u_{hh}</math> : effective heavy hole quantum potential |
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+ | <math> 1/u_{lh}</math> : effective light hole quantum potential |
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+ | <math> \vec{E}</math> : electrical field |
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+ | <math> \mu_{n}</math> : electron mobility |
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+ | <math> \mu_{p} </math> : hole mobility |
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+ | <math> u_{c}</math> : u of electron solved by localized landscape theory |
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+ | <math> u_{lh}</math> : u of heavy hole solved by localized landscape theory |
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+ | <math> u_{hh}</math> : u of light hole solved by localized landscape theory |
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+ | <math> N_{trap,effective}</math>: net trapped charges |
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+ | <math> R_{stim}</math> :Stimulate emission rate <math>1/cm^{3}/s</math> |
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+ | <math> layer_num</math>: layer number |
於 2019年10月23日 (三) 23:11 的修訂
Output file about band structure, carrier distribution and recombination.
Format
Parameter Explanation
- : Applied Voltage.
- : Energy of conduction band.
- : Energy of valance band.
- : Fermi lever of electron.
- : Fermi lever of electron.
- : Carrier density of electron.
- : Carrier density of hole.
- : Current density of electron.
- : Current density of hole.
- : Radiative recombination rate.
- : Non-radiative recombination rate.
- : Auger recombination rate.
- : Work with Schrodinger solver, shows the highest position of confined eigen state.
- : work with Schrodinger solver, shows the lowest position of confined eigen state.
- : Generation.
- : Activated donor dopant.
- : Activated accept dopant.
- : Impact ionization rate.
: effective electron quantum potential : effective heavy hole quantum potential : effective light hole quantum potential : electrical field : electron mobility : hole mobility : u of electron solved by localized landscape theory : u of heavy hole solved by localized landscape theory : u of light hole solved by localized landscape theory : net trapped charges :Stimulate emission rate : layer number