"*-cb.res" 修訂間的差異
出自 DDCC TCAD TOOL Manual
Jameshuang (對話 | 貢獻) (已建立頁面,內容為 "Output file about band structure, carrier distribution and recombination. '''<big><big>Format</big></big>''' <math>Position</math> <math>E_{c}</math> <math>E_{...") |
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(未顯示由 2 位使用者於中間所作的 3 次修訂) | |||
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'''<big><big>Format</big></big>''' |
'''<big><big>Format</big></big>''' |
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− | <math>Position</math> <math>E_{c}</math> <math>E_{v}</math> <math>E_{fn}</math> <math>E_{fp}</math> <math>n</math> <math>p</math> <math>J_{n}</math> <math>J_{p}</math> <math>R_{rad}</math> <math>R_{non}</math> <math>R_{auger}</math> <math>E_{b}</math> <math>E_{bh}</math> <math>G_{gen}</math> <math>{N_{d}}^+</math> <math>{N_{a}}^{-}</math> <math>R_{impact}</math> |
+ | <math>Position</math> <math>E_{c}</math> <math>E_{v}</math> <math>E_{fn}</math> <math>E_{fp}</math> <math>n</math> <math>p</math> <math>J_{n}</math> <math>J_{p}</math> <math>R_{rad}</math> <math>R_{non}</math> <math>R_{auger}</math> <math>E_{b}</math> <math>E_{bh}</math> <math>G_{gen}</math> <math>{N_{d}}^+</math> <math>{N_{a}}^{-}</math> <math>R_{impact}</math> <math> 1/u_{c}</math> <math> 1/u_{hh}</math> <math> 1/u_{lh}</math> <math> \vec{E}</math> <math> \mu_{n}</math> <math> \mu_{p} </math> <math> u_{c}</math> <math> u_{lh}</math> <math> u_{hh}</math> <math> N_{trap,effective}</math> <math> R_{stim}</math> <math> layer_num</math> <math> 1/u_{c2}</math> <math> u_{lh}</math> <math> n_{1st}</math> <math> n_{2nd}</math> <math> p_{1st/hh}</math> <math> p_{2nd/lh}</math> <math> Rad_{1st/hh}</math> <math> Rad_{2nd/lh}</math> <math> Ec_{1st, modified}</math> <math> Ec_{2nd, modified}</math> <math> Ev_{hh/1st, modified}</math> <math> Ev_{lh/2nd, modified}</math> |
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<big><big>'''Parameter Explanation'''</big></big> |
<big><big>'''Parameter Explanation'''</big></big> |
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− | <math>Position</math> : Applied Voltage. <math>(cm)</math> |
+ | *<math>Position</math> : Applied Voltage. <math>(cm)</math> |
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+ | *<math>E_{c}</math> : Energy of conduction band. <math>(eV)</math> |
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− | <math>E_{ |
+ | *<math>E_{v}</math> : Energy of valance band. <math>(eV)</math> |
− | <math>E_{ |
+ | *<math>E_{fn}</math> : Fermi lever of electron. <math>(eV)</math> |
− | <math>E_{ |
+ | *<math>E_{fp}</math> : Fermi lever of electron. <math>(eV)</math> |
− | <math> |
+ | *<math>n</math> : Carrier density of electron. <math>(cm^{-3})</math> |
− | <math> |
+ | *<math>p</math> : Carrier density of hole. <math>(cm^{-3})</math> |
− | <math> |
+ | *<math>J_{n}</math> : Current density of electron.<math>(Acm^{-2})</math> |
− | <math>J_{ |
+ | *<math>J_{p}</math> : Current density of hole.<math>(Acm^{-2})</math> |
− | <math> |
+ | *<math>R_{rad}</math> : Radiative recombination rate.<math>(cm^{-3}s^{-1})</math> |
− | <math>R_{ |
+ | *<math>R_{non}</math> : Non-radiative recombination rate.<math>(cm^{-3}s^{-1})</math> |
− | <math>R_{ |
+ | *<math>R_{auger}</math> : Auger recombination rate.<math>(cm^{-3}s^{-1})</math> |
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+ | *<math>E_{b}</math> : Work with Schrodinger solver, shows the highest position of confined eigen state.<math>(eV)</math> |
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− | <math>E_{ |
+ | *<math>E_{bh}</math> : work with Schrodinger solver, shows the lowest position of confined eigen state.<math>(eV)</math> |
− | <math> |
+ | *<math>G_{gen}</math> : Generation.<math>(cm^{-3}s^{-1})</math> |
− | <math> |
+ | *<math>{N_{d}}^+</math> : Activated donor dopant.<math>(cm^{-3})</math> |
− | <math>{N_{ |
+ | *<math>{N_{a}}^{-}</math> : Activated accept dopant.<math>(cm^{-3})</math> |
− | <math>{ |
+ | *<math>R_{impact}</math> : Impact ionization rate.<math>(cm^{-3}s^{-1})</math> |
− | <math>R_{impact}</math> : Impact ionization rate.<math>(cm^{-3}s^{-1})</math> |
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+ | <math> 1/u_{c}</math> : effective electron quantum potential |
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+ | <math> 1/u_{c2}</math> : effective electron quantum potential of the 2nd valley |
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+ | <math> 1/u_{hh}</math> : effective heavy hole quantum potential |
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+ | <math> 1/u_{lh}</math> : effective light hole quantum potential |
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+ | <math> \vec{E}</math> : electrical field |
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+ | <math> \mu_{n}</math> : electron mobility |
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+ | <math> \mu_{p} </math> : hole mobility |
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+ | <math> u_{c}</math> : u of electron solved by localized landscape theory |
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+ | <math> u_{c2}</math> : u of electron solved by localized landscape theory |
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+ | <math> u_{lh}</math> : u of heavy hole solved by localized landscape theory |
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+ | <math> u_{hh}</math> : u of light hole solved by localized landscape theory |
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+ | <math> N_{trap,effective}</math>: net trapped charges |
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+ | <math> layer_num</math>: layer number |
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+ | <math> n_{1st}</math> : electron density of the 1st band |
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+ | <math> n_{2nd}</math> : electron density of the 2nd band |
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+ | <math> p_{1st/hh}</math> : hole density of the 1st band or HH hole band if the user defines it is HH |
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+ | <math> p_{2nd/lh}</math> : hole density of the 2nd band or LH hole band if the user defines it is LH |
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+ | <math> Rad_{1st/hh}</math> : radiative recombination of the 1st band or HH hole band if the user defines it is HH |
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+ | <math> Rad_{2nd/lh}</math> : radiative recombination of the 2nd band or LH hole band if the user defines it is LH |
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+ | <math> Ec_{1st, modified}</math> : <math> Ec + \Delta Ec_{1st}</math> |
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+ | <math> Ec_{2nd, modified}</math> : <math> Ec + \Delta Ec_{2nd}</math> |
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+ | <math> Ev_{hh/1st, modified}</math> : <math> Ev + \Delta Ev_{hh}</math> |
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+ | <math> Ev_{lh/2nd, modified}</math> : <math> Ev + \Delta Ev_{lh}</math> |
於 2023年3月11日 (六) 16:10 的最新修訂
Output file about band structure, carrier distribution and recombination.
Format
Parameter Explanation
- : Applied Voltage.
- : Energy of conduction band.
- : Energy of valance band.
- : Fermi lever of electron.
- : Fermi lever of electron.
- : Carrier density of electron.
- : Carrier density of hole.
- : Current density of electron.
- : Current density of hole.
- : Radiative recombination rate.
- : Non-radiative recombination rate.
- : Auger recombination rate.
- : Work with Schrodinger solver, shows the highest position of confined eigen state.
- : work with Schrodinger solver, shows the lowest position of confined eigen state.
- : Generation.
- : Activated donor dopant.
- : Activated accept dopant.
- : Impact ionization rate.
: effective electron quantum potential : effective electron quantum potential of the 2nd valley : effective heavy hole quantum potential : effective light hole quantum potential : electrical field : electron mobility : hole mobility : u of electron solved by localized landscape theory : u of electron solved by localized landscape theory : u of heavy hole solved by localized landscape theory : u of light hole solved by localized landscape theory : net trapped charges :Stimulate emission rate : layer number : electron density of the 1st band : electron density of the 2nd band : hole density of the 1st band or HH hole band if the user defines it is HH : hole density of the 2nd band or LH hole band if the user defines it is LH : radiative recombination of the 1st band or HH hole band if the user defines it is HH : radiative recombination of the 2nd band or LH hole band if the user defines it is LH : : : :