*-cb.res

出自 DDCC TCAD TOOL Manual
於 2019年10月23日 (三) 23:11 由 Yrwu (對話 | 貢獻) 所做的修訂

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Output file about band structure, carrier distribution and recombination.

Format

Position E_{c} E_{v} E_{fn} E_{fp} n p J_{n} J_{p} R_{rad} R_{non} R_{auger} E_{b} E_{bh} G_{gen} {N_{d}}^+ {N_{a}}^{-} R_{impact}  1/u_{c}  1/u_{hh}  1/u_{lh}  \vec{E}  \mu_{n}  \mu_{p}  u_{c}  u_{lh}  u_{hh}  N_{trap,effective}  R_{stim}  layer_num



Parameter Explanation


  • Position : Applied Voltage. (cm)
  • E_{c} : Energy of conduction band. (eV)
  • E_{v} : Energy of valance band. (eV)
  • E_{fn} : Fermi lever of electron. (eV)
  • E_{fp} : Fermi lever of electron. (eV)
  • n : Carrier density of electron. (cm^{-3})
  • p : Carrier density of hole. (cm^{-3})
  • J_{n} : Current density of electron.(Acm^{-2})
  • J_{p} : Current density of hole.(Acm^{-2})
  • R_{rad} : Radiative recombination rate.(cm^{-3}s^{-1})
  • R_{non} : Non-radiative recombination rate.(cm^{-3}s^{-1})
  • R_{auger} : Auger recombination rate.(cm^{-3}s^{-1})
  • E_{b} : Work with Schrodinger solver, shows the highest position of confined eigen state.(eV)
  • E_{bh} : work with Schrodinger solver, shows the lowest position of confined eigen state.(eV)
  • G_{gen} : Generation.(cm^{-3}s^{-1})
  • {N_{d}}^+ : Activated donor dopant.(cm^{-3})
  • {N_{a}}^{-} : Activated accept dopant.(cm^{-3})
  • R_{impact} : Impact ionization rate.(cm^{-3}s^{-1})
 1/u_{c}  : effective electron quantum potential
 1/u_{hh} : effective heavy hole quantum potential
 1/u_{lh} : effective light hole quantum potential
 \vec{E}  : electrical field
 \mu_{n} : electron mobility
 \mu_{p}  : hole mobility
 u_{c} : u of electron solved by localized landscape theory
 u_{lh} : u of heavy hole solved by localized landscape theory
 u_{hh} : u of light hole solved by localized landscape theory
 N_{trap,effective}: net trapped charges
 R_{stim} :Stimulate emission rate 1/cm^{3}/s
 layer_num: layer number