{"id":2,"date":"2019-02-02T17:53:12","date_gmt":"2019-02-02T09:53:12","guid":{"rendered":"http:\/\/yrwu.ee.ntu.edu.tw\/?page_id=2"},"modified":"2022-07-07T20:22:26","modified_gmt":"2022-07-07T12:22:26","slug":"sample-page","status":"publish","type":"page","link":"https:\/\/yrwu-wk.ee.ntu.edu.tw\/index.php\/sample-page\/","title":{"rendered":"SCI papers"},"content":{"rendered":"\n<ol class=\"wp-block-list\" type=\"1\"><li>Jun-Yu Huang, You-Wei Yang, Wei-Hsuan Hsu, En-Wen Chang, Mei-Hsin Chen, and Yuh-Renn Wu*, \u201cInfluences of dielectric constant and scan rate on hysteresis effect in perovskite solar cell with simulation and experimental analyses\u201d, Scientific report, <strong>12<\/strong>, 7927, 2022. <a href=\"https:\/\/dx.doi.org\/10.1038\/s41598-022-11899-x\">DOI: 10.1038\/s41598-022-11899-x<\/a><\/li><li>K. S. Qwah*, M. Monavarian, W. Y. Ho, Y.-R. Wu, J. S. Speck, \u201c<a>Vertical hole transport through unipolar InGaN quantum wells and double heterostructures<\/a>\u201d, Physical Review Material, 6, 044602, April, 2022. DOI: <a href=\"https:\/\/doi.org\/10.1103\/PhysRevMaterials.6.044602\">10.1103\/PhysRevMaterials.6.044602<\/a><\/li><li>Hsiu-Chi Pai and Yuh-Renn Wu*, \u201cInvestigating the high field transport properties of Janus WSSe and MoSSe by DFT analysis and Monte Carlo simulations\u201d, J. Appl. Phys. 131, 144303 (2022); <a href=\"https:\/\/doi.org\/10.1063\/5.0088593\">https:\/\/doi.org\/10.1063\/5.0088593<\/a>. Editor\u2019s Pick.<\/li><li>Ray-Hua Horng, Chun-Xin Ye, Po-Wei Chen, Daisuke Iida, Kazuhiro Ohkawa, Yuh-Renn Wu, and Dong-Sing Wuu, \u201cStudy on the effect of size on InGaN red micro-LEDs\u201d, Scientific Reports, 12, 1324, (2022) DOI: <a href=\"https:\/\/doi.org\/10.1038\/s41598-022-05370-0\">10.1038\/s41598-022-05370-0<\/a><\/li><li>Cheng-Han Ho, James S. Speck, Claude Weisbuch, and Yuh-Renn Wu*, \u201cEfficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shape defects and Random Alloy Fluctuation in Quantum Wells\u201d, Physical review applied, 17, 014033, 2022, \u00a0\u00a0\u00a0DOI:<a href=\"https:\/\/doi.org\/10.1103\/PhysRevApplied.17.014033\">10.1103\/PhysRevApplied.17.014033<\/a>\u00a0<\/li><li>Chung-Chi Chen, Ting-Chun Huang, Yu-Wei Lin, Yu-Ren Lin, Ping-Hsiu Wu, Ping-Wei Liou, Hao-Yu Hsieh, Yang-Yi Huang, Shaobo Yang, Yuh-renn Wu, and C. C. Yang*, \u201cHole mobility behavior in Al-gradient polarization-induced p-type AlGaN grown on GaN template,\u201d Appl. Phys. Lett. 120, 022103, 2022. DOI: <a href=\"https:\/\/doi.org\/10.1063\/5.0070599\">10.1063\/5.0070599<\/a><\/li><li>Pin-Fang Chen, Edward Chen and Yuh-Renn Wu*, \u201cDesign of \u00a0Monolayer MoS2 nanosheet transistors for low-power applications\u201dIEEE Transaction on Electron Device, 69, No.1, pp358-363, 2022. <a href=\"https:\/\/doi.org\/10.1109\/TED.2021.3130840\">DOI:10.1109\/TED.2021.3130840<\/a> published Oct. 2021<\/li><li>Chen-Ming Chuang, Yun-Hsiu Cheng, and Yuh-Renn Wu*, \u201cElectro-Optical Numerical Modeling for the Design of UVA Nitride-Based Vertical-Cavity Surface-Emitting Laser Diodes\u201d<em>, IEEE Journal of Selected Topics in Quantum Electronics<\/em>, 28, 1, 1700606, pp.1-6, Jan-Feb., 2022, <a href=\"https:\/\/doi.org\/10.1109\/JSTQE.2021.3114411\">DOI: 10.1109\/JSTQE.2021.3114411<\/a> , published September 2021<\/li><li>Huan-Ting Shen, Yu-Chieh Chang, and Yuh-Renn Wu*, \u201cAnalysis of light emissions polarization ratio in deep ultra-violet light emitting diodes by considering random alloy\u00a0 fluctuations with the 3D k.p method\u201d , physica status solidi rapid, 2100498, 2021. <a href=\"https:\/\/doi.org\/10.1002\/pssr.202100498\">DOI:10.1002\/pssr.202100498<\/a><\/li><li>Yue Zhao, Tsung-Yin Tsai, Gang Wu, Cormac \u00d3 Coile\u00e1in, Yan-Feng Zhao, Duan Zhang, Kuan-Ming Hung, Ching-Ray Chang, Yuh-Renn Wu<em>, and Han-Chun Wu<\/em> ,\u201cGraphene\/SnS2 Van der Waals photodetector with high photoresponsivity and high photodetectivity for broadband 365 &#8211; 2240 nm detection\u201d, ACS Applied Materials &amp; Interfaces, 13, 39, 47198\u201347207, Sept. 2021. <a href=\"https:\/\/doi.org\/10.1021\/acsami.1c11534\">DOI: 10.1021\/acsami.1c11534<\/a><\/li><li>Huan-Ting Shen, Claude Weisbuch, James S. Speck, and Yuh-Renn Wu*, \u201cThree-dimensional modeling of minority-carrier lateral diffusion length including random alloy fluctuations in (In,Ga)N and (Al,Ga)N single quantum wells\u201d, Physical Review Applied, 16, 2, 024054, Sep. 2021. <a href=\"https:\/\/doi.org\/10.1103\/PhysRevApplied.16.024054\">DOI: 10.1103\/PhysRevApplied.16.024054<\/a><\/li><li>Ji-Xuan Yang;\u00a0Dai-Jie Lin;\u00a0Yuh-Renn Wu;\u00a0Jian-Jang Huang*, &#8220;Deep Source Metal Trenches in GaN-on-Si HEMTs for Relieving Current Collapse,&#8221; in IEEE Journal of the Electron Devices Society, 9, pp 557 \u2013 563, 10 May 2021. DOI: <a href=\"https:\/\/doi.org\/10.1109\/JEDS.2021.3078522\">10.1109\/JEDS.2021.3078522<\/a><\/li><li>Kai Shek Qwah*, Christian A. Robertson, Yuh-Renn Wu and James Speck, \u201cModeling dislocation-related reverse bias leakage in GaN p-n diodes\u201d, Semiconductor Science and Technology, 36, 075001 DOI: <a href=\"https:\/\/doi.org\/10.1088\/1361-6641\/abfdfc\">10.1088\/1361-6641\/abfdfc<\/a><\/li><li>Shreekant Sinha, Fu-Gow Tarntair, Cheng-Han Ho, Yuh-Renn Wu, and Ray-Hua Horng*,<br>\u201cInvestigation of Electrical and Optical Properties of AlGaInP Red Vertical Micro-Light-Emitting Diodes With Cu\/Invar\/Cu Metal Substrates\u201d, IEEE Transactions on Electron Devices, <em>IEEE Transactions on Electron Devices<\/em>, vol. 68, no. 6, pp. 2818-2822, June (2021) . DOI:<a rel=\"noreferrer noopener\" href=\"https:\/\/doi.org\/10.1109\/TED.2021.3073879\" target=\"_blank\">10.1109\/TED.2021.3073879<\/a><\/li><li>Wenjie Yan, Huei-Ru Fuh, Yanhui Lv, Ke-Qiu Chen, Tsung-Yin Tsai, Yuh-Renn Wu, Tung-Ho Shieh, Kuan-Ming Hung*, Juncheng Li, Duan Zhang, Cormac \u00d3 Coile\u00e1in, Sunil K Arora, Zhi Wang, Zhaotan Jiang, Ching-Ray Chang, Han-Chun Wu*, \u201c<a href=\"https:\/\/www.nature.com\/articles\/s41467-021-22316-8\">Giant gauge factor of Van der Waals material based strain sensors<\/a>\u201d, Nature communications, 12, 1, p2018, April, 2021. DOI: <a href=\"https:\/\/doi.org\/10.1038\/s41467-021-22316-8\">10.1038\/s41467-021-22316-8<\/a><\/li><li>Wan Yu Wu, Yu Hsuan Hsu, Yi Fan Chen, Yuh Renn Wu, Han Wen Liu, Tse Yi Tu, Paul P.C. Chao, Chih Shan Tan, Ray-Hua Horng<sup>*<\/sup>, \u201cWearable Devices Made of a Wireless Vertical-Type Light-Emitting Diode Package on a Flexible Polyimide Substrate with a Conductive Layer\u201d, <a href=\"https:\/\/scholar.nctu.edu.tw\/zh\/publications\/wearable-devices-made-of-a-wireless-vertical-type-light-emitting-\">ACS Applied Electronic Materials<\/a>, 3, 2, p979, Feb, (2021) <a href=\"https:\/\/doi.org\/10.1021\/acsaelm.0c01072\">https:\/\/doi.org\/10.1021\/acsaelm.0c01072<\/a><\/li><li>Tsung-Yin Tsai, Pin-Fang Chen, Shu-Wei Chang, Yuh-Renn Wu*, \u201cStudies of 2D Bulk and Nanoribbon Band Structures in Mo<em><sub>x<\/sub><\/em>W<sub>1\u2013<em>x<\/em><\/sub>S<sub>2<\/sub>\u00a0Alloy System Using Full sp<sup>3<\/sup>d<sup>5<\/sup>\u00a0Tight\u2010Binding Model\u201d, physica status solidi (b), 2000375, 2, (2021)\u00a0 (on line 2020\/09). <a href=\"https:\/\/doi.org\/10.1002\/pssb.202000375\">DOI:10.1002\/pssb.202000375<\/a><\/li><li>Tien-Yu Wang, Wei-Chih Lai*, Syuan-Yu Sie, Sheng-Po Chang, Yuh-Renn Wu, Yu-Zung Chiou, Cheng-Huang Kuo, Jinn-Kong Sheu, \u201c<a href=\"https:\/\/aip.scitation.org\/doi\/abs\/10.1063\/5.0026911\">AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier<\/a>\u201d, Applied Physics Letters, 117, p251101, Dec (2020) DOI: 10.1063\/5.0026911<\/li><li>Jun-Yu Huang, Jiun-Haw Lee, and Yuh-Renn Wu*, Tse-Ying Chen and Yu-Cheng Chiu,Jau-Jiun Huang and Man-kit Leung, Tien-Lung Chiu,&#8221;Revealing the mechanism of carrier transport in host-guest systems of organic materials with a modified Poisson and drift-diffusion solver&#8221;, Phys. Rev. Materials 4, 125602, Dec. 2020. <a href=\"https:\/\/doi.org\/10.1103\/PhysRevMaterials.4.125602\">DOI: 10.1103\/PhysRevMaterials.4.125602<\/a><\/li><li>Guillaume Lheureux*, Cheyenne Lynsky, Yuh-Renn Wu, James S. Speck, and Claude Weisbuch, &#8220;A 3D simulation comparison of carrier transport in green and blue c-plane multiquantum well nitride light emitting diodes&#8221;, J. Appl. Phys. 128, 235703 (2020); <a href=\"https:\/\/doi.org\/10.1063\/1.5143276\">DOI:10.1063\/1.5143276<\/a><\/li><li>Claude Weisbuch*, Shuji Nakamura, Yuh-Renn Wu, and James S. Speck &#8220;Disorder effects in nitride semiconductors: impact on fundamental and device properties&#8221;, Nanophotonics, 10, p3\u201321, 2021\u00a0 (Review article), <a rel=\"noreferrer noopener\" href=\"https:\/\/doi.org\/10.1515\/nanoph-2020-0590\" target=\"_blank\">DOI: 10.1515\/nanoph-2020-0590<\/a><\/li><li>Jiun-Haw Lee, Chia-Hsun Chen, Bo-Yen Lin, Yi-Hsin Lan, Yi-Mei Huang, Nai-Jing Chen, Jau-Jiun Huang, Dmytro Volyniuk, Rasa Keruckiene, Juozas Vidas Grazulevicius, Yuh-Renn Wu, Man-kit Leung,* and Tien-Lung Chiu*, \u201cBistriazoles with a Biphenyl Core Derivative as an Electron-Favorable Bipolar Host of Efficient Blue Phosphorescent Organic Light-Emitting Diodes\u201c, ACS Applied Materials &amp; Interfaces, 12, 44, 49895\u201349904\u00a0, <a href=\"https:\/\/dx.doi.org\/10.1021\/acsami.0c13705\">DOI: 10.1021\/acsami.0c13705<\/a>\u00a0<\/li><li>Hiroshi Amano, Ram\u00f3n Collazo, Carlo De Santi, Sven Einfeldt, Mitsuru Funato, Johannes Glaab, Sylvia Hagedorn, Akira Hirano, Hideki Hirayama, Ryota Ishii, Yukio Kashima, Yoichi Kawakami, Ronny Kirste, Michael Kneissl, Robert Martin*, Frank Mehnke, Matteo Meneghini, Abdallah Ougazzaden, Peter J Parbrook, Siddharth Rajan, Pramod Reddy, Friedhard R\u00f6mer, Jan Ruschel, Biplab Sarkar, Ferdinand Scholz, Leo J Schowalter, Philip Shields, Zlatko Sitar, Luca Sulmoni, Tao Wang, Tim Wernicke, Markus Weyers, Bernd Witzigmann, Yuh-Renn Wu, Thomas Wunderer, Yuewei Zhang, \u201cThe 2020 UV emitter roadmap\u201d, Journal of Physics D: Applied Physics, 53, 50, 503001, Sep. 2020. <a href=\"https:\/\/doi.org\/10.1088\/1361-6463\/aba64c\">DOI: 10.1088\/1361-6463\/aba64c<\/a><\/li><li>Ray-Hua Horng*, Shreekant Sinha, Yuh-Renn Wu, Fu-Guo Tarntair, Jung Han &amp; Dong-Sing Wuu, \u201cCharacterization of semi-polar (20-21) InGaN microLEDs.\u201d, <em>Scientific Reports<\/em>, <strong>10, 15966, Sep. 2020. <a href=\"https:\/\/doi.org\/10.1038\/s41598-020-72720-1\">DOI:10.1038\/s41598-020-72720-1<\/a><\/strong><\/li><li>Ching-Wen Chang, Paritosh V Wadekar, Hui-Chun Huang, Quark Yung-Sung Chen, Yuh-Renn Wu, Ray T Chen, Li-Wei Tu*, \u201cLight Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods\/Si (111) Heterojunction Solar Cells\u201d, Nanoscale research letters, 15, p1-p12, online Aug. 2020, DOI: <a href=\"https:\/\/dx.doi.org\/10.1186\/s11671-020-03392-z\">10.1186\/s11671-020-03392-z <\/a>\u00a0<\/li><li>Yi Chao Chow*, Changmin Lee, Matthew Wong, Yuh-Renn Wu, Shuji Nakamura, Steven P. DenBaars, John Bowers, James S. Speck, \u201cDependence of carrier escape lifetimes on quantum barrier thickness in InGaN\/GaN multiple quantum well photodetectors\u201d, Optics Express, 28, 16, pp. 23796-23805, Aug. 2020. DOI: <a href=\"https:\/\/doi.org\/10.1364\/OE.399924\">10.1364\/OE.399924<\/a> <\/li><li><strong>Kai Shek Qwah*, Morteza Monavarian*, Guillaume Lheureux, Jianfeng Wang, Yuh-Renn Wu, and James S. Speck, \u201cTheoretical and experimental investigation of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder\u201d, Applied Physics Letter, 117<\/strong>, 022107<strong>, July 2020. <\/strong>DOI: <a href=\"https:\/\/dx.doi.org\/10.1063\/5.0006291\">10.1063\/5.0006291<\/a><\/li><li>Chun-Lin Yu, Chih-Hao Lin, and Yuh-Renn Wu*, \u201cAnalysis and optimization of GaN based Multi-channels FinFETs\u201d, IEEE Transactions on nanotechnology, 19, pp439-445, June, 2020. DOI <a href=\"https:\/\/dx.doi.org\/10.1109\/TNANO.2020.2998840\">10.1109\/TNANO.2020.2998840<\/a>.<\/li><li>Chia-Yen Huang<sup>*<\/sup>, Walde Sebastian, Chia-Lung Tsai, Carsten Netzel, Hsueh-Hsing Liu, Sylvia Hagedorn, Yuh-Renn Wu, Yi-Keng Fu, and Markus Weyers, \u201cOvercoming the excessive compressive strain in AlGaN epitaxy by introducing a high Si-doping in AlN templates\u201d <em>Jpn. J. Appl. Phys.,<\/em> <strong>59,<\/strong> 070904, May, 2020. <a href=\"https:\/\/doi.org\/10.35848\/1347-4065\/ab990a\">DOI: 10.35848\/1347-4065\/ab990a<\/a><\/li><li>Jun-Yu Huang, Mei-Tan Wang, Guan-Yu Chen, Jung-Yu Li, Shih-Pu Chen, Jiun-Haw Lee, Tien-Lung Chiu, and Yuh-Renn Wu*, \u201cAnalysis of the Triplet Exciton Energy Transfer Mechanism at Heterojunction of Organic Light-Emitting Diode\u201d, Journal of physics D, Applied Physics, 53, 345501, 2020. DOE:<a href=\"https:\/\/doi.org\/10.1088\/1361-6463\/ab8a94\">10.1088\/1361-6463\/ab8a94<\/a><\/li><li>Cheyenne Lynsky*, Abdullah I. Alhassan, Guillaume Lheureux, Bastien Bonef, Steven P. DenBaars, Shuji Nakamura, Yuh-Renn Wu, Claude Weisbuch, and James S. Speck, \u201cBarriers to carrier transport in multiple quantum well nitride-based c-plane green light emitting diodes\u201d Phys. Rev. Materials 4, 054604, May, 2020, DOI:<a href=\"https:\/\/doi.org\/10.1103\/PhysRevMaterials.4.054604\">10.1103\/PhysRevMaterials.4.054604<\/a><\/li><li>Saulius Marcinkevi\u010dius*, Rinat Yapparov, Leah Y. Kuritzky, Yuh-Renn Wu, Shuji Nakamura, and James S. Speck, \u201cLow-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport\u201d, Phys. Rev. B 101, 075305, (Feb), 2020. DOI: <a href=\"https:\/\/doi.org\/10.1103\/PhysRevB.101.075305\">10.1103\/PhysRevB.101.075305<\/a><\/li><li>Piotr Martyniuk*, Krystian Michalczewski, Tsung-Yin Tsai, Chao-Hsin Wu, and Yuh-Renn Wu, \u201cA Thermoelectrically Cooled nBn Type\u2010II Superlattices InAs\/InAsSb\/B\u2010AlAsSb Mid\u2010Wave Infrared Detector\u201d, Phys. Status Solidi A, 217: 1900522, 2020. DOI: <a href=\"https:\/\/doi.org\/10.1002\/pssa.201900522\">10.1002\/pssa.201900522<\/a><\/li><li>Tsung-Yin Tsai, Krystian Michalczewski, Piotr Martyniuk, Chao-Hsin Wu, and Yuh-Renn Wu*, \u201cApplication of localization landscape theory and the k \u00b7 p model for direct modeling of carrier transport in a type II superlattice InAs\/InAsSb photoconductor system\u201d, Journal of Applied Physics 127, 033104 (2020); DOI: <a href=\"https:\/\/aip.scitation.org\/doi\/pdf\/10.1063\/1.5131470?class=pdf\">10.1063\/1.5131470<\/a><\/li><li>Christian Andrew Robertson*,\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0 Kai Shek Qwah, Yuh-Renn Wu, James S. Speck, \u201cModeling Dislocation-Related Leakage Currents in GaN <em>p-n<\/em> Diodes\u201d, Journal of Applied Physics 126, 245705 (2019) DOI: <a href=\"https:\/\/doi.org\/10.1063\/1.5123394\">10.1063\/1.5123394<\/a><\/li><li>Chih-Chieh Chen*, Shiue-Yuan Shiau, Ming-Feng Wu, and Yuh-Renn Wu*, \u201cHybrid classical-quantum linear solver using Noisy Intermediate Scale Quantum machines\u201d, Scientific Reports, Vol 9, p16251, 2019. DOI:<a href=\"https:\/\/doi.org\/10.1038\/s41598-019-52275-6\">10.1038\/s41598-019-52275-6<\/a><\/li><li>Jun-Yu Huang,\u00a0En-Wen Chang,\u00a0and Yuh-Renn Wu*, \u201cOptimization of MAPbI<sub>3<\/sub>-Based Perovskite Solar Cell With Textured Surface\u201d, IEEE Journal of Photovoltaics, 9, No.6, pp1686 &#8211; 1692, Nov. 2019. DOI: <a rel=\"noreferrer noopener\" href=\"https:\/\/doi.org\/10.1109\/JPHOTOV.2019.2941170\" target=\"_blank\">10.1109\/JPHOTOV.2019.2941170<\/a><\/li><li>Krystian Michalczewski, Piotr Martyniuk, \u0141ukasz Kubiszyn, Chao-Hsin Wu, Yuh-Renn Wu, Jarek Jure\u0144czyk, Antoni Rogalski, Jozef Pi\u00f3trowski, \u201cDemonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs\/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling\u201d, IEEE Electron Device Letters, 40, No. 9, 1396\u00a0\u2013 1398, Sept. (2019), <strong>DOI:\u00a0<\/strong><a rel=\"noreferrer noopener\" href=\"https:\/\/doi.org\/10.1109\/LED.2019.2930106\" target=\"_blank\">10.1109\/LED.2019.2930106<\/a><\/li><li>Saulius Marcinkevi\u010dius*, Rinat Yapparov, Leah Y Kuritzky, Yuh-Renn Wu, Shuji Nakamura, Steven P DenBaars, James S Speck, \u201c<a href=\"https:\/\/aip.scitation.org\/doi\/abs\/10.1063\/1.5092585\">Interwell carrier transport in InGaN\/(In) GaN multiple quantum wells<\/a>\u201d, Applied Physics Letters, 114 (15), 151103, 2019. April. <a href=\"https:\/\/doi.org\/10.1063\/1.5092585\">DOI: 10.1063\/1.5092585<\/a><\/li><li>Li-Cheng Chang, Jhih-Hao Lin, Cheng-Jia Dai, Ming Yang, Yi-Hong Jiang, Yuh-Renn Wu, and Chao-Hsin Wu*, \u201dSystematic investigation of the thresholdvoltage modulation of AlGaN\/GaN Schottky-gate Fin-HEMTs\u201d, J. Appl. Phys. 125, 094502, March (2019); <a href=\"https:\/\/doi.org\/10.1063\/1.5085275\">DOI:10.1063\/1.5085275<\/a><\/li><li>Hung-Hsiang Chen, James S Speck, Claude Weisbuch, Yuh-Renn Wu*, \u201cThree dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuations\u201d, Applied Physics Letters, 113, 153504, 2018, <a href=\"https:\/\/doi.org\/10.1063\/1.5051081\">DOI: 10.1063\/1.5051081<\/a><\/li><li>W. Hahn, J-M Lentali, P Polovodov, N Young, S Nakamura, JS Speck, C Weisbuch, M Filoche, Y-R Wu, M Piccardo, F Maroun, L Martinelli, Y Lassailly, J Peretti*, \u201cEvidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN\/GaN quantum wells by scanning tunneling luminescence spectroscopy, Physical Review B 98 (4), 045305, 2018, DOI: <a href=\"https:\/\/dx.doi.org\/10.1103\/PhysRevB.98.045305\">10.1103\/PhysRevB.98.045305<\/a>.<\/li><li>Chia-Yen Huang*, Tzu-Ying Tai, Jing-Jie Lin, Tsu-Chi Chang, Che-Yu Liu, Tien-Chang Lu, Yuh-Renn Wu, Hao-Chung Kuo, \u201cMode-Hopping Phenomena in the InGaN-Based Core\u2013Shell Nanorod Array Collective Lasing\u201d, ACS Photonics, 5, pp 2724\u20132729, 2018. DOI: <a href=\"https:\/\/pubs.acs.org\/doi\/abs\/10.1021\/acsphotonics.8b00471\">10.1021\/acsphotonics.8b00471.<\/a><\/li><li>Han\u2010Wei Hsiao and Yuh\u2010Renn Wu*, \u201c3D Self\u2010Consistent Quantum Transport Simulation for GaAs Gate\u2010All\u2010Around Nanowire Field\u2010Effect Transistor with Elastic and Inelastic Scattering Effects\u201d, physica status solidi (a), 1800524, 2018. DOI:<a href=\"https:\/\/onlinelibrary.wiley.com\/doi\/abs\/10.1002\/pssa.201800524\"> 10.1002\/pssa.201800524<\/a><\/li><li>Wen-Yen Chang, Yang Kuo, Yu-Feng Yao, CC Yang, Yuh-Renn Wu, and Yean-Woei Kiang*, \u201cDifferent surface plasmon coupling behaviors of a surface Al nanoparticle between TE and TM polarizations in a deep-UV light-emitting diode\u201d Optics Express 26 (7), 8340-8355, 2018. <a href=\"https:\/\/doi.org\/10.1364\/OE.26.008340\">DOI:10.1364\/OE.26.008340<\/a><\/li><li>Chia-Ying Su, Meng-Che Tsai, Keng-Ping Chou, Hsin-Chun Chiang, Huang-Hui Lin, Ming-Yen Su, Yuh-Renn Wu, Yean-Woei Kiang, CC Yang*,\u201d Method for enhancing the favored transverse-electric-polarized emission of an AlGaN deep-ultraviolet quantum well\u201d Optics express 25 (22), 26365-26377, 2017. DOI :<a href=\"https:\/\/doi.org\/10.1364\/OE.25.02636\">10.1364\/OE.25.02636<\/a><\/li><li>Te-Jen Kung, Jun-Yu Huang, Jau-Jiun Huang, Snow H. 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Yang*, &#8220;Enhancing the Hole-Injection Efficiency of a Light-Emitting Diode by Increasing Mg Doping in the p-AlGaN Electron-Blocking Layer,&#8221; in\u00a0<em>IEEE Transactions on Electron Devices<\/em>\u00a0, 64 (8), 3226-3233. 2017 DOI: <a href=\"http:\/\/dx.doi.org\/10.1109\/TED.2017.2711023\">10.1109\/TED.2017.2711023<\/a><\/li><li>Chi-Kang Li, Marco Piccardo, Li-Shuo Lu, Svitlana Mayboroda, Lucio Martinelli, Claude Weisbuch, Marcel Filoche, Yuh-Renn Wu<sup> \u201c<\/sup>Localization landscape theory of disorder in semiconductors III: Application to transport and radiative recombination in light emitting diodes.\u201d, Phys. Rev. B, 95, 144206 , April, 2017. DOI: <a href=\"https:\/\/doi.org\/10.1103\/PhysRevB.95.144206\">10.1103\/PhysRevB.95.144206<\/a><\/li><li>Marco Piccardo, Chi-Kang Li, Yuh-Renn Wu, James S. 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Speck<\/em>, \u201cAnalyzing Physical Properties of InGaN Multiple Quantum Well LEDs from Nano Scale Structure\u201d, Applied Physics Letter, <em>101, 083505, 2012.<\/em> <a href=\"http:\/\/link.aip.org\/link\/doi\/10.1063\/1.4747532\">DOI:10.1063\/1.4747532<\/a>.<\/li><li><em>Chang-Pei Wang and<\/em> <em>Yuh-Renn Wu<sup>*<\/sup><\/em>, \u201cStudy of Optical Anisotropy in Nonpolar and Semipolar AlGaN Quantum Well Deep Ultraviolet Light Emission Diode\u201d Journal of Applied Physics, 112, 033104, 2012. <a href=\"http:\/\/link.aip.org\/link\/doi\/10.1063\/1.4742050?ver=pdfcov\">DOI: 10.1063\/1.4742050<\/a>\uff082012, JAP Aug Top 20 most downloaded in this month\uff09<\/li><li><em>Yoshinobu Kawaguchi*, Chia-Yen Huang, Yuh-Renn Wu, Qimin Yan, Chih-Chien Pan, Yuji Zhao, Shinichi Tanaka, Kenji Fujito, Daniel Feezell, Chris G. Van de Walle, Steven P. DenBaars, and Shuji Nakamur<\/em>, \u201cInfluence of polarity on Carrier Transports of Semipolar Multiple-Quantum-Well (20-2-1) and (20-21) Light-Emitting Diodes\u201d, Appl. Phys. Lett. <strong>100<\/strong>, 231110 (2012) <a href=\"http:\/\/link.aip.org\/link\/doi\/10.1063\/1.4726106\">DOI:10.1063\/1.4726106<\/a> (2012, June, Top most downloaded,\u00a0 \u201cEditor\u2019s Picks of 2012.)<\/li><li><em>Chi-Kang Li and Yuh-Renn Wu*,<\/em>\u00a0 \u201cStudy on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN\/InGaN LEDs\u201d IEEE Trans Electron Dev., 59 (2), pp400-407, (2012). <a href=\"http:\/\/dx.doi.org\/10.1109\/TED.2011.2176132\">DOI:10.1109\/TED.2011.2176132<\/a> (2013, 2014 JCR highly cited papers (top 1%) of this journal)<\/li><li><em>H.-A. Chin, I-C. Cheng*, C.-K. Li, Y.-R. Wu, J. Z. Chen, W.-S. Lu, W.-L. Lee<\/em>, \u201cThe electrical properties of modulation-doped rf-sputtered polycrystalline MgZnO\/ZnO heterostructures\u201d, Journal of Physics D: Applied Physic, 44, 455101, (2011). <a href=\"http:\/\/dx.doi.org\/10.1088\/0022-3727\/44\/45\/455101\">DOI:10.1088\/0022-3727\/44\/45\/455101<\/a><\/li><li><em>Jeng-Wei Yu , Chi-Kang Li , C. Y. Chen , Yuh-Renn Wu , Li-Jen Chou, and Lung-Han Peng*,<\/em> \u201cTransport properties of gallium nitride nanowire metal-oxide-semiconductor transistor\u201d, Appl. Phys. Lett, <strong>99<\/strong>, 152108, (2011). <a href=\"http:\/\/dx.doi.org\/10.1063\/1.3651332\">DOI:10.1063\/1.3651332<\/a><\/li><li><em>Liang-Yi Chen, Hung-Hsun Huang, Chun-Hsiang Chang, Ying-Yuan Huang, Yuh-Renn Wu, and JianJang Huang*<\/em>, &#8220;Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays&#8221;, Optics Express, 19,\u00a0 pp. A900-A907, (2011). <a href=\"http:\/\/dx.doi.org\/10.1364\/OE.19.00A900\">DOI:10.1364\/OE.19.00A900<\/a><\/li><li><em>Hung-Hsun Huang, I-Lin Lu and Yuh-Renn Wu*,<\/em>&#8220;Study of thermoelectric properties of indium nitride nanowire&#8221;, Physica status solidi (a), 208, pp1562-2565, 2011. (SCI)\u00a0 <a href=\"http:\/\/dx.doi.org\/10.1002\/pssa.201001047\">DOI 10.1002\/pssa.201001047<\/a> <\/li><li><em>I-Lin Lu, Yuh-Renn Wu<sup>*<\/sup>, and Jasprit Singh<\/em>, &#8220;Study of Carrier Dynamics and Radiative Efficiency in InGaN\/GaN LEDs with Monte Carlo Method&#8221; Physica status solidi (c), 8, pp2393-2395, 2011, DOI: <a href=\"http:\/\/dx.doi.org\/DOI%2010.1002\/pssc.201001054\">10.1002\/pssc.201001054<\/a><\/li><li><em>Yu-Hsuan Sun, Yun-Wei Cheng, Szu-Chieh Wang, Ying-Yuan Huang, Chun-Hsiang Chang, Sheng-Chieh Yang, Liang-Yi Chen, Min-Yung Ke, Chi-Kang Li, Yuh-Renn Wu, and JianJang Huang*<\/em>, \u201cOptical Properties of the Partially Strain Relaxed InGaN\/GaN Light-Emitting Diodes Induced by P-type GaN Surface Texturing\u201d, Electron Dev. Lett., 32, pp182-184, 2011.(SCI) DOI: <a href=\"http:\/\/dx.doi.org\/10.1109\/LED.2010.2093503\">10.1109\/LED.2010.2093503<\/a><\/li><li><em>I-Lin Lu, Yuh-Renn Wu<sup>*<\/sup>, and Jasprit Singh<\/em>, &#8220;A Study of the Role of Dislocation Density, Indium Composition on the Radiative Efficiency in InGaN\/GaN Polar and Nonpolar LEDs using Drift-diffusion Coupled with a Monte Carlo Method&#8221;, Journal of Applied Physics, 108, 124508, 2010. (SCI) DOI: <a href=\"http:\/\/dx.doi.org\/10.1063\/1.3524544\">10.1063\/1.3524544<\/a><\/li><li><em>Po-Yuan Dang and Yuh-Renn Wu<sup>*<\/sup><\/em>, &#8220;Optical Polarization Anisotropy of Tensile Strained InGaN\/AlInN Quantum Wells for TM Mode Lasers&#8221;, J. Appl. Phys., 108, 083108, 2010. (SCI) DOI: <a href=\"http:\/\/dx.doi.org\/10.1063\/1.3498805\">10.1063\/1.3498805<\/a>.<\/li><li><em>Huai-An Chin, I-Chun Cheng<sup>*<\/sup>, Chih-I Huang, Yuh-Renn. Wu, Wen-Sen Lu, Wei-Li Lee, Jian Z. Chen, Kuo-Chuang Chiu, and Tzer-Shen Lin<\/em> \u201cTwo dimensional electron gases in polycrystalline MgZnO\/ZnO heterostructures grown by rf-sputtering process\u201d, Journal of Applied Physics,<strong> 108<\/strong>, 054503, 2010. (SCI) <a href=\"http:\/\/dx.doi.org\/10.1063\/1.3475500\">DOI:10.1063\/1.3475500<\/a><\/li><li><em>Huei-Min Huang, Hung-Hsun Huang, Yuh-Renn Wu*,and Tien-Chang Lu*<\/em>, \u201cAbnormal polarization switching phenomenon in a-plane Al<em><sub>x<\/sub><\/em>Ga<sub>1-<em>x<\/em><\/sub>N\u201d, Optics Express, V18, No. 21, pp21743-21749, 2010. (SCI) DOI:<a href=\"http:\/\/dx.doi.org\/10.1364\/OE.18.021743\">10.1364\/OE.18.021743<\/a><em> <\/em><\/li><li><em>T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu* and H.-H. Tseng<\/em>, &#8220;Strain-enhanced photoluminescence from Ge direct transition&#8221;, Appl. Phys. Lett., 96, 211108, 2010. (SCI) <a href=\"http:\/\/dx.doi.org\/10.1063\/1.3429085\">DOI:10.1063\/1.3429085<\/a><\/li><li><em>Hung-Hsun Huang and Yuh-Renn Wu*,<\/em> &#8220;Light Emission Polarization Properties of Semipolar InGaN\/GaN Quantum Well&#8221;, J. Appl. Physics, Vol. 107, pp053112-1-7, 2010. (SCI) <a href=\"http:\/\/dx.doi.org\/10.1063\/1.3327794\">DOI:10.1063\/1.3327794<\/a> <\/li><li><em>Hung-Hsun Huang and Yuh-Renn Wu*,<\/em> &#8220;Light Emission Polarization Properties of Strained (11-22) semipolarInGaN Quantum Well&#8221;, Physica status solidi c, Vol. 7, no. 7-8, 2010. (SCI) DOI: <a href=\"http:\/\/dx.doi.org\/10.1002\/pssc.200983456\">10.1002\/pssc.200983456<\/a>.<\/li><li><em>Cheng-Yu Chang and Yuh-Renn Wu*,<\/em> &#8220;Study of Light Emission Enhancement in Nanostructured InGaN\/GaN Quantum Wells&#8221;, IEEE Journal of Quantum Electronics, Vol. 46, no. 6, pp884-889, 2010. (SCI) <a href=\"http:\/\/dx.doi.org\/10.1109\/JQE.2010.2040515\">10.1109\/JQE.2010.2040515<\/a><\/li><li><em>Chih-I Huang, Huai-An Chin, Yuh-Renn Wu*, I-Chun Cheng, Jian Z. Chen, Kuo-Chuang Chiu, and Tzer-Shen Lin, <\/em>&#8220;Mobility Enhancement of Polycrystalline MgZnO\/ZnO Thim Film Layer with Modulation Doping and Polarization Effect&#8221;, IEEE Trans Electron Dev, Vol. 57, no.3, pp696-703, 2010. (SCI) <a href=\"http:\/\/dx.doi.org\/10.1109\/TED.2009.2039527\">10.1109\/TED.2009.2039527<\/a><\/li><li><em>Huai-An Chin, Chih-I Huang, Yuh-Renn Wu, I-Chun Cheng, Jian Z. Chen, Kuo-Chuang Chiu, and Tzer-Shen Lin,<\/em> \u201cInfluences of polarization effects in the electrical properties of polycrystalline MgZnO\/ZnO heterostructure,\u201d Mater. Res. Soc. Symp. Proc., 1201, H4.5, Nov. 2009 (EI) DOI:<a href=\"http:\/\/dx.doi.org\/10.1557\/PROC-1201-H04-05\">10.1557\/PROC-1201-H04-05<\/a><\/li><li><em>Hung-Hsun Huang and Yuh-Renn Wu*,<\/em> &#8220;Study of Polarization Properties of Light Emitted from a-plane InGaN\/GaN Quantum Well-based Light Emitting Diodes&#8221;, Journal of Applied Physics, Vol. 106, p023106, 2009. (SCI) <a href=\"http:\/\/dx.doi.org\/10.1063\/1.3176964\">DOI: 10.1063\/1.3176964 <\/a>.<\/li><li><em>Kun-Mao Pan, Yun-Wei Cheng, Liang-Yi Chen, Ying-Yuan Huang, Min-Yung Ke, Cheng-Pin Chen, Yuh-Renn Wu and JianJang Huang,<\/em> &#8220;Polarization dependent sidewall light diffraction of LEDs surrounded by nanorod arrays&#8221;, IEEE Photonics Technology Letters, Vol. 21, no.22, pp1683-1685, 2009. (SCI) <a href=\"http:\/\/dx.doi.org\/10.1109\/LPT.2009.2031682\">10.1109\/LPT.2009.2031682<\/a><\/li><li><em>Yuh-Renn Wu*<\/em>, Chinghua Chiu, Cheng-Yu Chang, Peichen Yu, and Hao-Chung Kuo, \u201cSize-Dependent Strain Relaxation and Optical Characteristics of InGaN\/GaN Nanorod LEDs\u201d, IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, no. 4 , pp1226-1233, July\/Aug, 2009. (SCI) DOI:<a href=\"http:\/\/dx.doi.org\/10.1109\/JSTQE.2009.2015583\">10.1109\/JSTQE.2009.2015583<\/a><\/li><li><em>Yuh-Renn Wu*, Yih-Yin Lin, Hung-Hsun Huang, and Jasprit Singh<\/em>, &#8220;Electronic and Optical Properties of InGaN Quantum Dot based Emitters for Solid State Lighting&#8221;, Journal of applied physics, vol. 105, p013117, 2009. <a href=\"http:\/\/dx.doi.org\/10.1063\/1.3065274\">DOI:10.1063\/1.3065274 <\/a>(SCI)<\/li><li><em>Chih-I Huang, <a href=\"http:\/\/ieeexplore.ieee.org\/search\/searchresult.jsp?disp=cit&amp;queryText=%28%20%20yuh-renn%20%20wu%3Cin%3Eau%29&amp;valnm=Yuh-Renn++Wu&amp;history=yes\">Yuh-Renn Wu<\/a>*, I-Chun Cheng Chen, J.Z. Kuo-Chuang Chiu Tzer-Shen Lin<\/em> &#8220;Mobility Study of Polycrystalline MgZnO\/ZnO Thin Film Layers with Monte Carlo Method&#8221;, <strong>Computational Electronics, 2009. IWCE &#8217;09. 13th International Workshop on<\/strong>, 27-29 May 2009. (EI) <a href=\"http:\/\/dx.doi.org\/10.1109\/IWCE.2009.5091118\">DOI: 10.1109\/IWCE.2009.5091118<\/a><\/li><li><em>Chi-Kang Li, Yuh-Renn Wu* and Jasprit Singh<\/em>, &#8220;Modeling of Junction Temperature and Current Flow in High Power InGaN\/GaN Light Emission Diodes Using Finite Element Methods&#8221;,\u00a0 <strong>Computational Electronics, 2009. IWCE &#8217;09. 13th International Workshop on<\/strong>, 27-29 May 2009. (EI) <a href=\"http:\/\/dx.doi.org\/10.1109\/IWCE.2009.5091121\">DOI: 10.1109\/IWCE.2009.5091121<\/a><\/li><li><em>Yuh-Renn Wu*, Peichen Yu, C.H. Chiu, Cheng-Yu Chang , and H.C. Kuo,<\/em> \u201cAnalysis of Strain Relaxation and Emission Spectrum of A Free-Standing GaN-based Nanopillar\u201d, proceeding of SPIE, Vol 7058, p70580G, 2008. (EI) DOI:<a href=\"http:\/\/dx.doi.org\/10.1117\/12.800658\">10.1117\/12.800658<\/a><\/li><li><em>Peichen Yu , C. H. Chiu , Yuh-Renn Wu, H. H. Yen, J. R. Chen, C. C. Kao, Han-Wei Yang, H. C. Kuo, T. C. Lu, Y. W. Yeh, and S. C. Wang<\/em>, &#8221; Strain Relaxation Induced Micro-Photoluminescence Characteristics of a Single InGaN-based Nanopillar Fabricated by Focused Ion Beam Milling &#8221; Appl. Phys. Lett., Vol 93, p081110, 2008. (SCI) DOI:<a href=\"http:\/\/dx.doi.org\/10.1063\/1.2965461\">10.1063\/1.2965461<\/a>.<\/li><li><em>J. W. Chung, X. Zhao, Y.-R. Wu, J. Singh, and T. Palacios<\/em> \u201cEffect of image charges in the drain delay of AlGaN\/GaN high electron mobility transistors\u201d, Appl. Phys. Lett., vol 92, P093502, 2008. (SCI) <a href=\"http:\/\/dx.doi.org\/10.1063\/1.2889498\">DOI: 10.1063\/1.2889498<\/a><\/li><li><em>C. Y. Liu, A. Datta, N. W. Liu, Y. R. Wu, H. H. Wang, T. H. Chuang, and Y. L. Wang<\/em> \u201cEnhanced growth of anodic alumina nanochannels on Ga-ion pre-irradiated aluminum\u201d J. Vac. Sci. Technol. B, Vol. 26, pp651-654, 2008. (SCI) <a href=\"http:\/\/dx.doi.org\/10.1116\/1.2890706\">DOI:10.1116\/1.2890706<\/a><\/li><li> <em>Yuh-Renn Wu*, John M. Hinckley, and Jasprit Singh<\/em>\u00a0 \u201c<a rel=\"noreferrer noopener\" href=\"https:\/\/nscnt12.nsc.gov.tw\/APPLYFORM\/WRITINGS\/F123815005\/20071205121844.pdf\" target=\"_blank\">Extraction of Transport Dynamics in AlGaN\/GaN HFETs<\/a> Through Free Carrier Absorption\u201d, Journal of Electronic Materials, Vol.37, No. 5, pp578-584, 2008. (SCI) <a href=\"http:\/\/dx.doi.org\/10.1007\/s11664-007-0320-4\">DOI: 10.1007\/s11664-007-0320-4<\/a><\/li><li><em>Yuh-Renn Wu* and Jasprit Singh,<\/em> \u201cTransient Study of Self-heating Effects in AlGaN\/GaN HFETs: Consequence of Carrier Velocities, Temperature, and Device Performance\u201d J. Appl. Phys., vol. 101, p113712, 2007 (SCI). <a href=\"http:\/\/dx.doi.org\/10.1063\/1.2745286\">DOI: 10.1063\/1.2745286<\/a><\/li><li><em>S. Y. Yang, Q. Zhan, P. L. Yang, M. P. Cruz, Y. H. Chu, R. Ramesh, Y.-R. Wu, J. Singh, W. Tian, and D. G. Schlom,<\/em> \u201cCapacitance-voltage characteristics of BiFeO3\/SrTiO3\/GaN heteroepitaxial structures,\u201d Appl. Phys. Lett., vol. 91, p022909, July, 2007.(SCI) <a href=\"http:\/\/dx.doi.org\/10.1063\/1.2757089\">DOI: 10.1063\/1.2757089<\/a><\/li><li><em>Yuh-Renn Wu*, Madhusudan Singh, and Jasprit Singh<\/em>,&#8221; Device Scaling Physics and Channel Velocities in AlGaN-GaN HFETs: Velocities and Effective Gate Length&#8221;, IEEE Trans Electron Dev, 53, pp. 588-593, April, 2006. (SCI) DOI: <a href=\"http:\/\/dx.doi.org\/10.1109\/TED.2006.870571\">10.1109\/TED.2006.870571<\/a><\/li><li><em>Yuh-Renn Wu*, Madhusudan Singh, and Jasprit Singh<\/em>,&#8221; Sources of Transconductance Collapse in III-V nitrides &#8211; Consequences of velocity-field relations and source-gate design&#8221; , IEEE Trans Electron Dev, vol. 52, no. 6, pp.1048\u20131054, June, 2005. (SCI) DOI:<a href=\"http:\/\/dx.doi.org\/10.1109\/TED.2005.848084\">10.1109\/TED.2005.848084<\/a><\/li><li><em>Madhusudan Singh, Yuh-Renn Wu and Jasprit Singh<\/em>,&#8221; Velocity Overshoot Effects and Scaling Issues in III-V Nitrides &#8220;, IEEE Trans Electron Dev, 52, 3, pp 311-316, 2005. (SCI) DOI:<a href=\"http:\/\/dx.doi.org\/10.1109\/TED.2005.843966\">10.1109\/TED.2005.843966<\/a><\/li><li><em>Yuh-Renn Wu* and Jasprit Singh<\/em>,&#8221; Polar Heterostructure for Multi-function Devices: Theoretical Studies&#8221;, IEEE Trans Electron Dev, 52, 2,284-293, 2005. (SCI) DOI: <a href=\"http:\/\/dx.doi.org\/10.1109\/TED.2004.842546\">10.1109\/TED.2004.842546<\/a><\/li><li><em>Yuh-Renn Wu* and Jasprit Singh<\/em>, &#8220;Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors&#8221;<em>. <\/em>Appl. Phys. Lett., 85, 2004, pp 1223-1225. (SCI) <a href=\"http:\/\/dx.doi.org\/10.1063\/1.1784039\">DOI: 10.1063\/1.1784039<\/a><\/li><li><em>Madhusudan Singh, Yuh-Renn Wu and Jasprit Singh<\/em>, &#8220;Examination of LiNbO3 \/ nitride heterostructures&#8221;<em>. <\/em>Solid-State Electron, 47, 12, 2003, pp 2155-2159. (SCI) <a href=\"http:\/\/dx.doi.org\/10.1016\/S0038-1101(03)00189-8\">DOI:10.1016\/S0038-1101(03)00189-8<\/a><\/li><li><em>Yuh-Renn Wu*, Madhusudan Singh and Jasprit Singh.<\/em> &#8220;Gate leakage suppression and contact engineering in nitride heterostructures&#8221;, J. Appl. Phys., <strong>94<\/strong>, 5826-5831, 2003. (SCI) <a href=\"http:\/\/dx.doi.org\/10.1063\/1.1618926\">DOI: 10.1063\/1.1618926<\/a><\/li><li><em>A. Datta, Yuh-Renn Wu, Y. L. Wang<\/em>, \u201cReal-time Observation of Ripple structure formation on a diamond surface under focused ion-beam bombardment\u201d, Physical Review B, 63, 125407, 2001. <a href=\"http:\/\/dx.doi.org\/10.1103\/PhysRevB.63.125407\">DOI: 10.1103\/PhysRevB.63.125407<\/a><\/li><li> <em>A. Datta, Yuh-Renn Wu, Y. L. Wang<\/em>, \u201cGas-assisted focused-ion-beam lithography of a diamond (100) surface\u201d, Appl. Phys. Lett. 75, pp2677, 1999. (SCI) <a href=\"http:\/\/dx.doi.org\/10.1063\/1.125116\">DOI:10.1063\/1.125116<\/a> <\/li><\/ol>\n\n\n\n<p><a href=\"http:\/\/dx.doi.org\/10.1063\/1.125116\"><\/a><\/p>\n\n\n\n<h2 class=\"wp-block-heading\">Conference Papers<\/h2>\n\n\n\n<ol class=\"wp-block-list\"><li>Yuh-Renn Wu*<sup>1<\/sup>,\nChi-Kang Li<sup>1<\/sup>, Hung-Hsiang Chen<sup>1<\/sup>, Shuan Wang<sup>1<\/sup>,\nJames S. Speck<sup>2<\/sup>, Marcel Filoche<sup>3<\/sup>, and Claude Weisbuch<sup>2,3\n\u201c<\/sup>Application of Localization landscape theory in modeling InGaN based\nGreen LEDs with random alloy fluctuation and AlGaN based UVLEDs.\u201d, Photonic\nWest 2018, San Francisco, Jan. 27-Feb. 2, 2018<strong> (Invited talk)<\/strong><\/li><li>Marcel Filoche*, Marco Piccardo, H, Chi-Kang Li, Yuh-Renn Wu, Svitlana\nMayboroda, Jean-Marie Lentali, Lucio Martinelli, Jacques Peretti, Claude\nWeisbuch, Carrier localization induced\nby alloy disorder in nitride devices:theory and experiments, Photonic West 2018, San Francisco, Jan 27-Feb. 2,\n2018.<\/li><li>Chia-Ying Su, Meng-Che Tsai, Keng-Ping Chou, Huang-Hui Lin, Ming-Yen Su,\nHsin-Chun Chiang, Yuh-Renn Wu, Yean-Woei Kiang, Chih-Chung Yang*, \u201cUnintentionally formed thin barriers of\nelevated Al contents in a deep-UV AlGaN quantum well for generating favored\ncompressive strain, \u201cPhotonic\nWest 2018, San Francisco, Jan 27-Feb. 2, 2018.<\/li><li>Yuh-Renn Wu*, \u201cStudy of Carrier Transport and Recombination\nin Disordered InGaN Quantum Well Light Emitting Diode With Localization\nLandscape Theory\u201d, 11th International Symposium on\nSemiconductor Light Emitting Devices, (ISSLED) 2017,\nBanff, Canada, Oct 8-12, 2017. <strong>(invited\ntalk)<\/strong> <\/li><li>SF Chen and YR Wu, \u201cA New Design of Intermediate Band Solar\nCell with Multi-Layer MoS2 Nanoribbons\u201d, Oral Presentation, EU PVSEC 2017, Amsterdam, Netherland, Sep25-28, 2017<\/li><li>Shuan Wang , Chi-Kang\nLi, Marcel Filoche, Claude Weisbuch , James S. Speck, and Yuh-Renn Wu*, \u201c3D Modeling of Green InGaN QW LEDs with\nRandom Alloy fluctuation, &nbsp;12th\nInternational Conference on Nitride Semiconductors, Strasbourg,\nFrance, July 24-28, 2017<\/li><li>Chih-Wei Hsu and\nYuh-Renn Wu*, \u201cAnalysis of Peak Field\nReduction in AlGaN\/GaN HFETs with a Curved Field Plate\u201d. 12th\nInternational Conference on Nitride Semiconductors, Strasbourg,\nFrance, July 24-28, 2017<\/li><li>Bastien Bonef, Micha N\nFireman, Richard Cramer, Marco Piccardo, Yuh-Renn Wu, Claude Weisbuch, James S\nSpeck, \u201cAtom probe tomography nanometer\nscale characterization of alloy fluctuations in ternary nitrides\u201d 12th\nInternational Conference on Nitride Semiconductors, Strasbourg,\nFrance, July 24-28, 2017<\/li><li>Hung-Hsiang Chen , Shuan Wang ,\nYi-Keng Fu, and Yuh-Renn Wu*, \u201c2D\nTransport Modeling and Optimization of p-type and n-type AlGaN Supper Lattice\nfor Deep UV Light Emitting Diodes with Localized landscape theory\u201d, 12th\nInternational Conference on Nitride Semiconductors, Strasbourg,\nFrance, July 24-28, 2017. <\/li><li>Jun-Yu Huang, Te-Jen\nKung, and Yuh-Renn Wu*, \u201cModeling of Carrier Transport and Exciton Diffusion in\nOrganic Light Emitting Diodes with Different Doping Effects\u201d NUSOD 17 \u2013 17<sup>th<\/sup>\nInternational Conference on Numerical Simulation of Optoelectronic Devices, Copenhagen, DenMark July 24-28, 2017.<\/li><li>Yuh-Renn Wu*, Chi-Kang Li, Marco Piccardo, Lucio\nMartinelli, Marcel Filoche, James S. Speck and Claude Weisbuch, \u201cChallenges in Optoelectronic Device Simulation\u201d (TMCS II), Cork, Ireland, Dec.\n7-9, 2016<strong> (invited talk)<\/strong><\/li><li>Yuh-Renn Wu*, Chi-Kang Li, Marco Piccardo, Lucio\nMartinelli, Marcel Filoche, James S. Speck and Claude Weisbuch, \u201cImpact of Atomic Disorder in\nInGaN MQW LEDs\u201dInternational\nWorkshop on Nitride Semiconductors (IWN 2016), Orlando, FL, U.S.A, Oct 2-7,\n2016<strong> (invited talk)<\/strong><strong> <\/strong>.<\/li><li>Hao-Tsung Chen, Charng-Gan Tu, Yu-Feng Yao, Chun-Han\nLin, Yuh-Renn Wu, Yean-Woei Kiang and Chih-Chung Yang*, &nbsp;\u201cCombining High Hole Concentration in p-GaN\nand High Hole Mobility in u-GaN for High p-Type Conductivity in a p-GaN\/u-GaN\nAlternating-Layer Nanostructure\u201d International Workshop on Nitride\nSemiconductors (IWN 2016), Orlando, FL, U.S.A, Oct 2-7, 2016. <\/li><li>Marcel Filoche*, Svitlana Mayboroda, Marco Piccardo,\nYuh-Renn Wu, James Speck and Claude Weisbuch, \u201cA New Approach to Carrier Localization in Disordered Random Alloy\nStructures\u201d, <strong>&nbsp;<\/strong>International Workshop on Nitride\nSemiconductors (IWN 2016), Orlando, FL, U.S.A, Oct 2-7, 2016. <strong>(invited talk)<\/strong><strong> <\/strong>.<\/li><li>Yen-Chang Chen, Te-Jen Kung and Yuh-Renn Wu*,\n\u201cModeling and Optimization of InGaN Blue Light Laser Diodes\u201d, International Workshop on\nNitride Semiconductors (IWN 2016), Orlando, FL, U.S.A, Oct 2-7, 2016.<\/li><li>Yuh-Renn Wu* and &nbsp;Kuan-Ying Ho \u201cNumerical Modeling and\nOptomization of PEDOT:PSS\/Si Nanostructure Hybrid Solar Cell<strong>\u201d , PIERS\n2016 in<\/strong> <a href=\"http:\/\/www.piers.org\/piers2016Shanghai\/\">Shanghai<\/a>, China, Aug. 7-11.<strong> Invited paper<\/strong><\/li><li>Kuan-Ying\nHo and Yuh-Renn Wu*, &#8220;Numerical Analysis and Optimization of PEDOT:PSS\/Si\nNanowire Hybrid Solar Cells&#8221;, 2016 NUSOD, Sydney, Austria, July 11-15.<\/li><li>Te-Jen\nKung, Jun-Yu Huang, and Yuh-Renn Wu*, &#8220;Modeling of Random Dopant Effects\nof Organic Light Emitting Diode with Two Dimensional Simulation&#8221;, 2016\nNUSOD, Sydney, Austria, July 11-15.<\/li><li>Yen-Chang\nChen, Te-Jen Kung, and Yuh-Renn Wu*, &#8220;Optimization of the Gain Curve of\nthe InGaN Blue Light Laser Diode&#8221;, 2016 NUSOD, Sydney, Austria, July\n11-15. <\/li><li>Kuan-Ying Ho, I-Hsin Lu, Yuh-Renn Wu* \u201cDevelopment of\nnumerical modeling program for organic\/inorganic hybrid solar cells by\nincluding tail\/interfacial states models\u201d, 2016 SPIE Photonic West, San\nFrancisco, Feb 13-18, 2016. &nbsp;<em>OPTO, <\/em>974308-1~974308-7.\nDOI: 10.1117\/12.2211904<\/li><li>Chi-Kang Li, Li-Shuo Lu, Chen-Kuo Wu, Chung-Cheng Hsu,\nYuh-Renn Wu*, \u201c3D numerical modeling of the carrier transport and radiative\nefficiency for InGaN\/GaN light-emitting diodes with V-shaped pits\u201d 2016 SPIE\nPhotonic West, San Francisco, Feb 13-18, 2016. &nbsp;<\/li><li>Claude Weisbuch, Marco Piccardo, Marcel Filoche, Chi-Kang\nLi, Yuh-Renn Wu, Lucio Martinelli, J. Perretti, and James S. Speck, \u201c3D\nmodeling of intrinsic disorder in InGaN\/GaN heterostructures\u201d, 2016 SPIE\nPhotonic West, San Francisco, Feb 13-18, 2016. <strong>(Invited Conference Paper)<\/strong>.<\/li><li>Chen-Kuo Wu, Chung-Cheng Hsu, Chi-Kang Li, Tien-Chang Lu, and Yuh-Renn\nWu*,\u201d 3D numerical analysis of carrier transport in light emission diodes with\nV-shaped pits\u201c, ISGN-6, Hamamatsu, Japan, 11\/8-11\/13,\n2015.<\/li><li>Chen-Kuo Wu, Chi-Kang Li, and\nYuh-Renn Wu, \u201cInvestigation of Carrier Transport in Nitride Based LED by\nConsidering the Random Alloy Fluctuation\u201d, 14<sup>th<\/sup>\nInternational Conference on Numerical Simulation of Optoelectronic Devices, Taipei, Taiwan, Sep. 7-11, 2015.\n&nbsp;<\/li><li><em>Chung-Cheng\nHsu<\/em>, Chen-Kuo Wu, Chi-Kang Li,\nTien-Chang Lu, and <em>Yuh-Renn Wu,\u201d<\/em>3D Finite Element Strain Analysis of\nV-Shaped Pits in Light Emitting Diodes\u201d, 14<sup>th<\/sup> International\nConference on Numerical Simulation of Optoelectronic Devices, Taipei, Taiwan, Sep. 7-11, 2015. <\/li><li><em>I-Hsin\nLu<\/em> and <em>Yuh-Renn Wu,<\/em> \u201cModeling\nfor Carrier Transportation in Organic Light-emitting Diode by Considering\nEffective Tail States\u201d, 14<sup>th<\/sup> International Conference on Numerical\nSimulation of Optoelectronic Devices, Taipei, Taiwan,\nSep. 7-11, 2015. <\/li><li><em>Hung Lin<\/em>, Chi-kang Li and Yuh-Renn Wu,\u201dDevelopment\nof Quantum Transport Simulation Model by Considering Phonon Scattering in\nNanowire Device\u201d, 14<sup>th<\/sup> International Conference on Numerical\nSimulation of Optoelectronic Devices, Taipei, Taiwan,\nSep. 7-11, 2015. <\/li><li><em>Xinhui\nChen<\/em> and Yuh-Renn Wu,\n\u201cDesigning of p-AlGaN super lattice structure as the p-contact and transparent\nlayer in AlGaN UVLEDs\u201d, 14<sup>th<\/sup> International Conference on Numerical\nSimulation of Optoelectronic Devices, Taipei, Taiwan,\nSep. 7-11, 2015. <\/li><li><em>Kuan-Ying\nHo<\/em>, Chung-Yu Hong, Peichen Yu, and\nYuh-Renn Wu*, \u201c Optimization of All-Back-Contact GaAs Solar Cells\u201d, 14<sup>th<\/sup>\nInternational Conference on Numerical Simulation of Optoelectronic Devices, Taipei, Taiwan, Sep. 7-11, 2015. <\/li><li>Yuh-Renn Wu*, Chen-Kuo Wu,\nChi-Kang Li, David A. Browne, and James S. Speck, \u201cStudy of Percolation\nTransport in the InGaN\/AlGaN LEDs with Random Alloy Fluctuation\u201d, CLEO-PR 2015,\nBusan, Korea. 8\/24-8\/28 <strong>(Invited Conference Paper)<\/strong><\/li><li>I-Hsin Lu and Yuh-Renn Wu,\n\u201cModeling for carrier transportation in organic light-emitting diode by\nconsidering effective tail states\u201d 22nd International Workshop on Active-Matrix\nFlatpanel Displays and Devices (AM-FPD), 2015. 7\/1-7\/3 Kyoto, Japan <\/li><li>Yuh-Renn Wu, Chen-KuoWu,\nChung-ChengHsu, and JamesS.Speck, \u201dMultidimensional Numerical Modeling on the\nInfluence of Random Alloy Fluctuation in InGaN Quantum Well LED to the\nTransport Behavior\u201d, Applied Mathematics and Simulation for Semiconductors,\nWIAS, Berlin, Germany, March 11-13, 2015.<strong>\n(Invited Conference Paper)<\/strong> <\/li><li>Hui-Hsin Hsiao,\nHung-Chun Chang, and Yuh-Renn Wu*,\u201cDesign of nano-pattern reflectors\nfor thin-film solar cells based on three-dimensional optical and electrical modeling\u201d,<em> SPIE Photonic West<\/em>, San Francisco, CA, Feb.7-12, 2015. <\/li><li>Chen-Kuo Wu,\nTsung-Jui Yang, Claude Weisbuch, James S. Speck, and Yuh-Renn Wu*, \u201cCarrier\ntransport in the nonpolar and c-plane InGaN quantum well by considering\nthe indium fluctuation effects\u201d,<em> SPIE Photonic West<\/em>, San Francisco, CA, Feb.7-12, 2015. <\/li><li>Xinhui Chen and\nYuh-Renn Wu*, \u201cNumerical study of current spreading and light\nextraction in deep UV light-emitting diode,<em> SPIE\nPhotonic West<\/em>, San Francisco,\nCA, Feb.7-12, 2015. <\/li><li>Chen Kuo Wu, James S. Speck, and Yuh-Renn Wu*, \u201cAnalysis of Electron Percolation in the\nRandomAlloy AlGaN Barrier Layer\u201d 10<sup>th<\/sup>&nbsp; International Symposium on Semiconductor\nLight Emitting Devices, Kaohsiung, Taiwan, Dec. 14-19,\n2014.<\/li><li>Chung-Cheng Hsu and Yuh-Renn Wu*, \u201c3D Finite Element Strain Analysis of\nInGaN Quantum Well with Indium Fluctuations\u201d, 10<sup>th<\/sup>&nbsp; International Symposium on Semiconductor\nLight Emitting Devices, Kaohsiung, Taiwan, Dec. 14-19, 2014.<\/li><li>Hui-Hsin\nHisao, Hung-Chun Chang, and Yuh-Renn Wu<sup>*<\/sup>, \u201cDesign of Light\nTrapping Nanopatterned Solar Cells Based on Three Dimensional Optical and\nElectrical Modeling\u201d, 14<sup>th<\/sup> International Conference on Numerical\nSimulation of Optoelectronic Devices,&nbsp; Palma de Mallorca, Spain, Sep. 1-4, 2014. <\/li><li>Chao-Wei Wu\nand Yuh-Renn Wu<sup>*<\/sup>, \u201cThermoelectric Characteristic of the Rough InN\/GaN CoreShell Nanowire\u201d, 2014 International Workshop on nitride\nsemiconductor, Wroclaw, Poland, Aug.24-29, 2014. <\/li><li>Tsung-Jui\nYang, Yen-Chun Lin, James S. Speck, and Yuh-Renn Wu<sup>*<\/sup>, \u201c3D\nanalysis of Random Alloy Fluctuation in InGaN Quantum Well to the Carrier\nTransport, Tunneling, and Efficiency\u201d 2014 International Workshop on nitride\nsemiconductor, Wroclaw, Poland, Aug.24-29, 2014.<\/li><li>David Browne, Baishakhi\nMazumder, Yuh-Renn Wu and James S. Speck, \u201c<strong>Investigation of Electron\nTransport through InGaN Quantum Well Structures\u201d, 14<sup>th<\/sup> <\/strong>&nbsp;Electronic Materials\nConference, Santa Barbara,&nbsp; USA, June\n25-27, 2014<\/li><li>Erin Kyle, Stephen Kaun,\nYuhrenn Wu, and James Speck, \u201c<strong>Dislocation-Related Scattering in High\nMobility GaN Grown by Ammonia-Based Molecular Beam Epitaxy\u201d<\/strong> <strong>14<sup>th<\/sup> <\/strong>&nbsp;Electronic Materials Conference, Santa\nBarbara,&nbsp; USA, June 25-27, 2014<\/li><li>Chi-Kang Li, Maarten\nRosmeulen, Eddy Simoen, and Yuh-Renn Wu<sup>*<\/sup>, \u201cStudy on the Optimization for Current Spreading\nEffect of Lateral GaN\/InGaN LEDs by Modulation of Transparent Conducting\nLayer\u201d, WLED-5, Jeju, Korea, June 1-5, 2014.<\/li><li>Tsung-Jui\nYang, Jim. Speck, and Yuh-Renn Wu*, \u201c<strong>Influence of nanoscale indium fluctuation in the\nInGaN quantum-well LED to the efficiency droop with a fully 3D simulation model<\/strong><strong>,<\/strong>\u201d <em>SPIE Photonic West<\/em>, San\nFrancisco, CA, Feb. 2014 <\/li><li>Da-Wei Lin,\nYuh-Renn Wu, Yu-Ting Kang, Shu-ting Yeh, Yu-Lin Tsai, Gou-Chung Chi, Hao-Chung\nKuo, \u201c<strong>Analyzing\nthe correlation between nanoscale indium fluctuation in multiple quantum wells\nand efficiency droop behavior for InGaN-based light-emitting diodes grown on\nGaN substrate and sapphire<\/strong>,\u201d <em>SPIE Photonic West<\/em>, San\nFrancisco, CA, Feb. 2014 <\/li><li>Yuh-Renn\nWu*, \u201c Influences of nanoscale indium fluctuation in the InGaN quantum well LED\nto the carrier transport, radiation efficiency, and droop effect\u201d ,2013\nEMN Fall Meeting, Orlando, FL, Dec. 7-10, 2013. <strong>(Invited Paper)<\/strong><\/li><li>Shu-Ting\nYeh, Kai-Lun Chi , Jin-Wci Shi, and Yuh-Renn Wu*,\u201cNumerical Study on the\nOptimization of a GaN-Based Dual Color Light-Emitting Diode with P-Type\nInsertion Layer for Balancing Two-Color Intensities\u201d,&nbsp; The 10<sup>th<\/sup> International conferences\non nitride semiconductor, National Harbor, MD, Aug. 25-30, 2013.<\/li><li>David\nBrowne, Yuh-Renn Wu, and James S. Speck, \u201cInvestigation of Electron\nTransport through Unipolar InGaN Quantum Well Structures\u201d ,The 10<sup>th<\/sup>\nInternational conferences on nitride semiconductor, National Harbor, MD, Aug.\n25-30, 2013.<\/li><li>Digbijoy N.\nNath, Zhichao Yang, Pil S. Park, Chun Y. Lee, Yuh R. Wu, and Siddharth Rajan,\n\u201cUnipolar Vertical Transport Characteristics in III-Nitrides\u201d The 10<sup>th<\/sup>\nInternational conferences on nitride semiconductor, National Harbor, MD, Aug.\n25-30, 2013.<\/li><li>Chi-Kang Li and Yuh-Renn Wu, \u201cThree Dimensional Numerical\nStudy on the Efficiency of a Core-shell InGaN\/GaN Multiple Quantum Well\nNanowire LED\u201d, 13th International Conference on Numerical Simulation of Optoelectronic Devices, Vancouver,\nCanada, Aug. 19-22, 2013.<\/li><li>Yuh-Renn Wu, Shu-ting Yeh, Da-Wei Lin, Chi-kang Li, Hao-Chung\nKuo, and James S. Speck, \u201cInfluences of Indium Fluctuation to the Carrier\nTransport, Auger Recombination, and Efficiency Droop\u201d, 13th\nInternational Conference on Numerical Simulation of\nOptoelectronic Devices, Vancouver, Canada, Aug. 19-22, 2013. <\/li><li><em>Shu-Ting\nYeh and Yuh-Renn Wu<\/em> , \u201cStudy of Light Emission Polarization\nProperties\nof Semipolar InGaN\/GaN Quantum Well\nUnder Different Strain Conditions\u201d, CLEO-PR, Kyoto, Japan, June\n30-July 4, 2013.<\/li><li>Yu-Min Liao, Hsiao-Lun Wang, Yuh-Renn\nWu*, and Chao-Hsin Wu, \u201cThe Dependence\nof Base Dynamics and Current Gain in the InGaAs\/GaAs Light Emitting\nTransistors\u201d 40<sup>th<\/sup>international\nsymposium on compound semiconductor, Kobe, Japan, May 19-23, 2013.<\/li><li>Chun-Yao Lee, Huai-Te Pan, Yu-Chih Cheng,\nYuh-Renn Wu, Peichen Yu, \u201cOptical and electrical characteristics of silicon nanocone: Polymer hybrid heterojunction solar cells\u201d SPIE Photonic West, San Francisco,&nbsp; CA, Feb 2-7, 2013.<\/li><li>Pei-Wen\nLin, Sih-Chen Lu, Yu-Min Liao, Chin-Yi Chen, Yuh-Renn Wu, Yun-Chorng Chang, \u201c<a href=\"javascript:loadDetail('\/app\/program\/index.cfm?fuseaction=conferencedetail&amp;symposium=PW13O&amp;conference_id=1037417#2001541')\">Economic\nfabrication of optoelectronic devices with novel nanostructures<\/a>\u201d\nSPIE Photonic West, San Francisco,&nbsp; CA,\nFeb 2-7, 2013.<\/li><li>Pradeep N.\nSenanayake, Chung-Hong Hung, Alan Farrell, David A. Ramirez, Joshua N. Shapiro,\nChi-Kang Li, Yuh-Renn Wu, Majeed Hayat, and Diana L. Huffaker, \u201c<a href=\"javascript:loadDetail('\/app\/program\/index.cfm?fuseaction=conferencedetail&amp;symposium=PW13O&amp;conference_id=1037410#2020675')\">Nanopillar optical\nantenna avalanche detectors for the development of single photon detectors<\/a>\u201d,\nSPIE Photonic West, San Francisco,&nbsp; CA,\nFeb 2-7, 2013.<\/li><li>Yuh-Renn\nWu*, Ravi Shivaraman, Kuang-Chung Wang, Chih-Chien Pan, and James S Speck, &#8220;Predicting\nPhysical Properties of InGaN LEDs from Atomic Scale Structure&#8221;,\nInternational Workshop on Nitride Semiconductors, Sapporo, Japan, Oct. 14-19,\n2012<\/li><li>Chia-Yen\nHuang, Yuji Zhao, Qimin Yan, Yoshinobu Kawaguchi, Yu-Renn Wu, Daniel F.\nFeezell, Chris G. van de Walle, James S. Speck, Steven P Denbaars, and Shuji\nNakamura, &#8220;<strong> Carrier transports in semipolar multiple-quantumwells\nlight-emitting diodes&#8221;<\/strong>, International Workshop on Nitride\nSemiconductors, Sapporo, Japan, Oct 14-19, 2012<\/li><li>Ingrid L.\nKoslow, Matthew T. Hardy, Po shan Hsu, Michael Cantore, Stuart Brinkley,\nPo-Yuan Dang, Yuh-Renn Wu, Erin C. Young, Feng Wu, Alexey Romanov, Shuji\nNakamura, Steve, P. Denbaars, and James S. Speck,&#8221;Semipolar LongWavelength Light Emitting Diodes &nbsp;Grown\non Stress Relaxed InGaN Buffer Layers&#8221;, International Workshop on\nNitride Semiconductors, Sapporo,&nbsp;&nbsp; Japan,\nOct 14-19, 2012<\/li><li>Jeng-Wei\nYu,&nbsp; Chi-Kang Li,&nbsp; Po-Chun Yeh,&nbsp;\nYuh-Renn Wu,&nbsp; and Lung-Han Peng*, &#8220;Ga2O3\/GaN\nsingle nanowire MOSFET with cut-off frequency ~150GHz&#8221;, International\nWorkshop on Nitride Semiconductors, Sapporo,&nbsp;&nbsp;\nJapan, Oct 14-19, 2012<\/li><li>Chi-Kang\nLi,&nbsp; Jeng-Wei Yu,&nbsp; Lung-Han Peng,&nbsp; and Yuh-Renn Wu*, &#8220;Study on 50nm Gate\nLength of Ga2O3\/GaN Nanowire Field Effect Transistor&#8221;, International\nWorkshop on Nitride Semiconductors, Sapporo,&nbsp;&nbsp;\nJapan, Oct 14-19, 2012<\/li><li>Chi-Kang\nLi,&nbsp; Hung-Chih Yang,&nbsp; Ta-Cheng Hsu,&nbsp;\nYu-Jiun Shen,&nbsp; Ai-Sen Liu,&nbsp; and Yuh-Renn Wu*, &#8220;Study on Electrical\nProperties of a Coreshell InGaN\/GaN Multiple Quantum Wells Nanowire LED&#8221;,\nInternational Workshop on Nitride Semiconductors, Sapporo,&nbsp;&nbsp; Japan, Oct 14-19, 2012<\/li><li>Chin-Yi\nChen and Yuh-Renn Wu*, &#8220;Studies of Scaling Issue in Tri-gate AlGaN\/GaN\nNanowire Transistors&#8221;, 12<sup>th<\/sup> Electronic Materials Conference,\nUniversity Park,&nbsp; PA, June 20-22, 2012<\/li><li>Yu-Chih\nCheng,&nbsp; Ting-Gang Chen,&nbsp; Feng-Yu Chang,&nbsp; Bo-Yu Huang,&nbsp;\nHuai-Te Pan,&nbsp; Peichen Yu,&nbsp; Chi-Kang Li,&nbsp;\nand Yuh-Renn Wu, &#8220;Fabrication and Modeling of Large-Scale Silicon\nNanowire Solar Cells for Thin-Film Photovoltaics&#8221;, 38th IEEE Photovoltaic\nSpecialists Conference, Austin,&nbsp; TX, June\n3-8, 2012<\/li><li>Ming-Han\nHsieh,&nbsp; Yuh-Renn Wu*,&nbsp; and Jasprit Singh, &#8220;The Effect of\nTailoring Electron\/Hole Blocking Layers on the Photovoltaic Performance of the\nSingle-Junction Solar Cells&#8221;, 38th IEEE Photovoltaic Specialists\nConference, Austin,&nbsp; TX, June 3-8, 2012<\/li><li>Ming-Han\nHsieh and Yuh-Renn Wu*, &#8220;Numerical Modeling of InxGa1-xN\/Silicon\nMultijunction Tandem Solar Cell&#8221;, 38th IEEE Photovoltaic Specialists\nConference, Austin,&nbsp; TX, June 3-8, 2012<\/li><li>Kuang-Chung\nWang and Yuh-Renn Wu*, Transition Rate in the InGaN Quantum Dot\nIntermediate-Band Solar Cell, 38th IEEE Photovoltaic Specialists Conference,\nAustin,&nbsp; TX, June 3-8, 2012<\/li><li>Yuh-Renn\nWu*,&nbsp; Chang-Pei Wang,&nbsp; Kuang-Chung Wang,&nbsp; and James S. Speck, Influences of Indium\nFluctuation to carrier transport and the Current-voltage Turn-on Behavior in\nthe InGaN Quantum Well LEDs, CLEO: 2012, San Jose,&nbsp; CA, May 6-11, 2012<\/li><li>Chang-Pei\nWang and Yuh-Renn Wu*, Study of Optical Anisotropy of c-plane\/m-plane\nUltra-violet LED and Laser Diode by k.p Method, CLEO: 2012, San Jose,&nbsp; CA, May 6-11, 2012<\/li><li>Kuang-Chung\nWang and Yuh-Renn Wu*, Intersubband and intrasubband transition in InGaN\nquantum dot for solar cell application, SPIE Photonic West, San Francisco,&nbsp; CA, Jan. 22-27, 2012<\/li><li>Chi-Kang Li\nand Yuh-Renn Wu*, Study of enhancement for the current spreading effect in\nvertical GaN\/InGaN LEDs, SPIE Optics + Photonics 8123-61, San Diego,&nbsp; CA, Aug 20-15, 2011<\/li><li>Yuh-Renn\nWu*,&nbsp; Chi-Kang Li,&nbsp; Chao-wei Wu,&nbsp;\nand Jasprit Singh, Study of Carrier Leakage Hot Carriers and Radiative\nEfficiency of InGaN LEDs with Monte Carlo Method, International Conference on\nNitride Semiconductors, Glasgow,&nbsp; UK,\nJuly 10-15, 2011<\/li><li>Guan-Jung\nLai,&nbsp; Chi-Kang Li,&nbsp; and Yuh-Renn Wu*, Study of Light Extraction\nEfficiency of Vertical InGaN Light Emitting Diodes with Different Textured\nSurfaces and Electrode Contacts, International Conference on Nitride\nSemiconductors, Glasgow,&nbsp; UK, July 10-15,\n2011<\/li><li>Chi-Kang\nLi,&nbsp; Jeng-Wei Yu,&nbsp; Lung-Han Peng,&nbsp; and Yuh-Renn Wu*, Scaling Performance Study\nof Ga2O3\/GaN Nanowire Field Effect Transistor with 3D Finite Element Solver,\nAsian-pacific wide bandgap workshop (APWS), Toba,&nbsp; Mie,&nbsp;\nJapan, May 22-26, 2011<\/li><li>Yuh-Renn\nWu*,&nbsp; Chi-kang Li,&nbsp; I-Lin Lu,&nbsp;\nand Jasprit Singh, Study of Vertical and Lateral Carrier Dynamic in the\nInGaN\/GaN Quantum Well LEDs for the Defect Density Carrier Leakage and Hot\nElectron Effect with Monte Carlo Method, Asian-pacific wide bandgap workshop\n(APWS), Toba,&nbsp; Mie,&nbsp; Japan, May 22-26, 2011<\/li><li>Hung-Hsun\nHuang and Yuh-Renn Wu*, Thermoelectric properties of InGaN\/GaN superlattice,\nMRS 2011 Spring Meeting, San Francisco,&nbsp;\nCA, April 22-27, 2011<\/li><li>Chi-Kang Li\nand Yuh-Renn Wu*, Current spreading effect in vertical GaN\/InGaN LEDs, SPIE\nPhotonic West, San Francisco,&nbsp; CA, Jan\n22-27, 2011<\/li><li>Jeng-Wei Yu,&nbsp; Yuh-Renn Wu,&nbsp;\nJian-Jang Huang,&nbsp; and Lung-Han\nPeng*, 100GHz depletion-mode Ga2O3\/GaN single nanowire MOSFET by photo-enhanced\nchemical oxidation method, International Electron Devices Meeting (IEDM) 2010,\nSan Francisco,&nbsp; CA, Dec. 6-8, 2010<\/li><li>Yen-Chun\nLee,&nbsp; Hung-Hsun Huang,&nbsp; Yuh-Renn Wu,&nbsp;\nand Peichen Yu*, Manipulative Polarization of a-plane InGaN\/GaN Photonic\nCrystals for Enhanced Spontaneous Emission, 16th Microoptics conference (MOC),\nHsinchu,&nbsp;&nbsp; Taiwan, Oct. 30-Nov. 3, 2010<\/li><li>Jeng-Wei\nYu,&nbsp; Yuh-Renn Wu,&nbsp; Jian-Jang Huang,&nbsp; and Lung-Han Peng*, 75GHz Ga2O3\/GaN Single\nNanowire Metal-Oxide-Semiconductor field-effect Transistors, IEEE Compound\nSemiconductor Integrated Circuit Symposium (CSICS) 2010, Monterey,&nbsp; CA, Oct. 3-6, 2010<\/li><li>Yen-Chun\nLee,&nbsp; Hung-Hsun Huang,&nbsp; Yuh-Renn Wu,&nbsp;\nand Peichen Yu*, Manipulative Polarization of a-plane InGaN\/GaN Photonic\nCrystals for Enhanced Spontaneous Emission, International conference on Solid\nState Devices and Materials (SSDM), Tokyo,&nbsp;\nJapan, Sept. 22-24, 2010.<\/li><li>I-Lin\nLu,&nbsp; Yuh-Renn Wu*,&nbsp; and Jasprit Singh, Study the role of\ndislocation indium composition and radiative efficiency on the InGaN\/GaN LEDs\nwith Monte Carlo method, International Workshop of Nitride Semiconductor (IWN),\nTampa,&nbsp; FL, Sept. 19-24, 2010<\/li><li>Hung-Hsun&nbsp; Huang and Yuh-Renn Wu*, Study of Phonon\nProperties of Indium Nitride, International Workshop of Nitride\nSemiconductor&nbsp; (IWN), Tampa,&nbsp; FL, Sept. 19-24, 2010<\/li><li>Po-Yuan\nDeng,&nbsp; Hung-Hsun Huang,&nbsp; and Yuh-Renn Wu*, Study of Polarization\nProperties of Light Emitted from Tensile Strained InGaN\/AlInN Quantum Well ,\nCLEO 2010, San Jose,&nbsp; CA, May 16-21, 2010<\/li><li>Yuh-Renn\nWu* and Pei-Cheng Ku, Nonpolar InGaN quantum dots for semiconductor quantum\nlight sources, SPIE Photonic West, San Francisco,&nbsp; CA, Jan 23-28, 2010<\/li><li>I-Lin\nLu,&nbsp; Yuh-Renn Wu*,&nbsp; John Hinckley,&nbsp; and Jasprit Singh, Role of interface\nroughness on lateral transport in InGaN\/GaN LEDs: diffusion length dislocation\nspacing and radiative efficiency, SPIE Photonic West, San Francisco,&nbsp; CA, Jan 23-28, 2010<\/li><li>Yuh-Renn\nWu*,&nbsp; Hung-Hsun Huang, &nbsp;Cheng-Yu Chang,&nbsp; and Chi-Kang Li,&nbsp; Strain Engineering in InGaN\/GaN Light\nEmitting Diodes, Internal Workshop of Physics on Semiconductor Devices, New\nDelhi,&nbsp; India, Dec15-19, 2009<\/li><li>Chi-Kang Li\nand Yuh-Renn Wu*, Three Dimensional Modeling of Junction Temperature and\nCurrent flow in High Power InGaN\/GaN Light Emission Diodes Using Finite Element\nMethods, 2nd White LEDs 2009, Taipei,&nbsp;\nTaiwan, Dec. 13-16, 2009<\/li><li>C-Y.\nYeh,&nbsp; I-C. Cheng*,&nbsp; and Y.-R. Wu, Investigation of polarization\neffect of array of cylindrical rods by Monte-Carlo method, 2nd White LEDs 2009,\nTaipei,&nbsp; Taiwan, Dec. 13-16, 2009<\/li><li>Po-Yuan\nDang,&nbsp; Hung-Hsun Huang,&nbsp; and Yuh-Renn Wu*, Light Emission Polarization\nProperties of a Tensile strained InGaN\/AlInN Quantum Well, 2nd White LEDs 2009,\nTaipei,&nbsp; Taiwan, Dec. 13-16, 2009<\/li><li>Huai-An\nChin,&nbsp; Chih-I Huang,&nbsp; Yuh-Renn Wu,&nbsp;\nI-Chun Cheng*,&nbsp; Jian Z. Chen,&nbsp; Kuo-Chuang Chiu,&nbsp; and Tzer-Shen Lin, Influences of Polarization\nEffects in the Electrical Properties of Polycrystalline MgZnO\/ZnO\nHeterostructure, MRS 2009 Fall Meeting, Boston,&nbsp;\nMA, Nov. 30 &#8211; Dec. 4, 2009<\/li><li>Hung-Hsun\nHuang and Yuh-Renn Wu*, Study of Light Emission Polarization Properties of\nStrained inGaN Alloy Films on GaN Substrates With Different Growth\nOrientations, International Conference on Nitride Semiconductors (ICNS),\nJeJu,&nbsp;&nbsp; Korea, Oct 18-23, 2009<\/li><li>Wei Lun\nOo,&nbsp; Heribert Eisele,&nbsp; George I. Haddad,&nbsp; Yuh-Renn Wu,&nbsp;\nRoger D. Pollard, Schottky Barrier Heights on AlGaN\/GaN Heterojunctions\nand Their Effect on High-Performance GaN TUNNETT Devices., 2nd UK\/Europe-China\nWorkshop on Millimetre Waves and Terahertz Technologies, Ruthford Appleton\nLabortarory,&nbsp; UK, Oct. 19-21, 2009<\/li><li>Jacob\nMelby*,&nbsp; Mahak Khandelwal1,&nbsp; Robert Davis,&nbsp;\nand Yuh-Renn Wu, Mechanism of Interaction between Hydrogen and the Two\nDimensional Electron Gas in AlGaN\/GaN High Electron Mobility Transistors,\nElectronic Material Conference, Penn State University, June 24-26, 2009<\/li><li>Hung-Hsun\nHuang and Yuh-Renn Wu*, Light Emission Polarization Properties of a-plane\nInGaN\/GaN Quantum Wells, CLEO 09, Baltimore,&nbsp;\nMD, May 31-June 5, 2009<\/li><li>Cheng-Yu\nChan g and Yuh-Renn Wu*, Analysis of Etching Depth Dependence of Emission\nProperties from InGaN\/GaN Light Emitting Diodes with Nanohole Arrays: Roles of\nStrain Relaxation and Surface States, CLEO 09, Baltimore,&nbsp; MD, May 31-June 5, 2009<\/li><li>ChingHua\nChiu,&nbsp; Peichen Yu,&nbsp; H. C. Kuo*,&nbsp;\nT. C. Lu,&nbsp; S. C. Wang,&nbsp; C. Y. Chang,&nbsp;\nY. R. Wu, Strain Relaxation and Emission Characteristics of\nSize-Dependent InGaN\/GaN Nanorod Arrays, CLEO 09, Baltimore,&nbsp; MD, May 31-June 5, 2009<\/li><li>Chih-I\nHuang,&nbsp; Yuh-Renn Wu*,&nbsp; I-Chun Cheng,&nbsp;\nJian Z. Chen,&nbsp; Kuc-Chuang\nChiu,&nbsp; and Tzer-Shen Lin, Mobility Study\nof Polycrystalline MgZnO\/ZnO Thin Film Layers with Monte Carlo Method, 13th\nInternal workshop on Computational Electronics 2009, Beijing,&nbsp; China, May 27-29, 2009<\/li><li>Chi-Kang\nLi,&nbsp; Yuh-Renn Wu*,&nbsp; and Jasprit Singh, Modeling of Junction\nTemperature and Current flow in High Power InGaN\/GaN Light Emission Diodes\nUsing Finite Element Methods, 13th Internal workshop on Computational\nElectronics 2009, Beijing,&nbsp; China, May\n27-29, 2009<\/li><li>Hung-hsun Huang,&nbsp;\nand Yuh-Renn Wu*, Light Emission Polarization Properties of a-plane\nInGaN\/GaN Quantum Wells, APS march meeting, Pittsburgh,&nbsp; PA, March 16\u201320, 2009<\/li><li>Jacob Melby*,&nbsp;\nJason Gu,&nbsp; Li Huang,&nbsp; Yuh-renn Wu,&nbsp;\nLisa Porter,&nbsp; Robert Davis, Reduction\nof the Specific Contact Resistance in p-type GaN-based Devices via Polarization\nDoping, APS march meeting, Pittsburgh,&nbsp;\nPA, March 16\u201320, 2009<\/li><li>Jason Gu*,&nbsp;\nMahak Khandelwal,&nbsp; Jacob\nMelby,&nbsp; Michael Steeves,&nbsp; Yuh-Renn Wu,&nbsp;\nRobert Lad,&nbsp; and Robert F. Davis,\nMechanism of Interaction between Hydrogen and the Two-dimensional Electron Gas\nin AlGaN\/GaN High Electron Mobility Transistors, APS march meeting,\nPittsburgh,&nbsp; PA, March 16\u201320, 2009<\/li><li>Peichen Yu*,&nbsp;\nMin-An Tsai,&nbsp; Ching-Hua Chiu,&nbsp; Hao-chung Kuo,&nbsp; and Yuh-Renn Wu, Strain relaxation\ncharacteristics of a single InGaN-based nanopillar fabricated by focused ion\nbeam milling, Optoelectronic Materials and Devices III, Hangzhou,&nbsp; China, Oct. 27, 2008<\/li><li>J. F. Ihlefeld*,&nbsp;\nZ-K. Liu,&nbsp; H. S. Craft,&nbsp; R. Collazo,&nbsp;\nS. Mita,&nbsp; Z. Sitar,&nbsp; J-P. Maria,&nbsp;\nY-R. Wu,&nbsp; J. Singh,&nbsp; W. A. Doolittle,&nbsp; R. Ramesh,&nbsp;\nand D. G. Schlom, Adsorption-controlled growth of BiFeO3 by MBE and\nintegration with wide band-gap semiconductors, The 15th International Workshop\non Oxide Electronics., Estes Park,&nbsp; &nbsp;Colorado., Sep. 14-17, 2008<\/li><li>Yuh-Renn Wu*,&nbsp;\nPeichen Yu,&nbsp; C.H. Chiu,&nbsp; Cheng-Yu Chang,&nbsp; and H.C. Kuo, Analysis of Strain Relaxation and\nEmission Spectrum of A Free-Standing GaN-based Nanopillar, SPIE Optics +\nPhotonics, San Diego,&nbsp; CA, Aug 10-14,\n2008<\/li><li>Yuh-Renn Wu*,&nbsp;\nYih-Yin Lin,&nbsp; and Jasprit Singh,\nInGaN Light Emitters: A comparison of Quantum Dot and Quantum Well based\ndevices, Conference on Lasers and Electro-Optics, San Jose,&nbsp; CA, May 4-9, 2008<\/li><li>Yuh-Renn Wu*,&nbsp;\nJohn Hinckley,&nbsp; and Jasprit Singh,\nExtraction of Transport Dynamics in AlGaN\/GaN HFETs through Free Carrier\nAbsorption, Electronic Material Conference, Notre Dame Unveristy,&nbsp; South Bend,&nbsp;\nIN, June 20-22, 2007<\/li><li>H. Eisele*,&nbsp;\nY-R. Wu,&nbsp; R. Kamoua,&nbsp; and G. I. Haddad, High-Performance Negative\nDifferential Resistance Oscillators and Combiners, The Seventeenth\nInternational Symposium on Space Terahertz Technology, Pasadena,&nbsp; CA, March 21-23, 2007<\/li><li>Yuh-renn Wu* and Jasprit Singh, How does phonon\ngeneration influence AlGaN\/GaN HFETs?- Transient and steady state studies ,\nDevice Research Conference, Penn State Unveristy,&nbsp; PA, June 26-28, 2006<\/li><li>Yuh-Renn Wu* and Jasprit Singh, Polar\nHeterostructure for Multi-function Devices: Theoretical Studies, Device\nResearch Conference, Notre Dame Unveristy,&nbsp;\nSouth Bend,&nbsp; IN, June 21-23, 2004<\/li><li>Madhusudan Singh*,&nbsp; Yuh-Renn Wu and Jasprit Singh, Velocity\nOvershoot Effects and Transit Times in III-V Nitrides HFETs: a Monte Carlo\nStudy , Device Research Conference, Notre Dame Unveristy,&nbsp; South Bend,&nbsp;\nIN, June 21-23, 2004<\/li><li>Yuh-Renn Wu*,&nbsp;\nMadhusudan Singh and,&nbsp; Jasprit\nSingh, Gate leakage suppression and contact engineering in nitride\nheterostructures:, Materials Research Society Fall Meeting, Boston,&nbsp; MA, December 1-5, 2003<\/li><li>Yuh-Renn Wu*,&nbsp;\nMadhusudan Singh and Jasprit Singh, The metal nitride heterojunction\nstructure &#8211; a self consistent drift diffusion charge control model, American\nPhysical Society March Meeting, Austin,&nbsp;\nTX, Mar. 3-7, 2003<\/li><li>Madhusudan Singh,&nbsp; Yuh-Renn Wu* and Jasprit Singh, Examination\nof LiNbO3 \/ nitride heterostructures, 9th International Workshop on Oxide\nElectronics, St. Petersburg,&nbsp; FL, October\n20-23, 2002<\/li><\/ol>\n","protected":false},"excerpt":{"rendered":"<p>Jun-Yu Huang, You-Wei Yang, We&#8230; <\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"open","template":"","meta":{"footnotes":""},"class_list":["post-2","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/yrwu-wk.ee.ntu.edu.tw\/index.php\/wp-json\/wp\/v2\/pages\/2","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/yrwu-wk.ee.ntu.edu.tw\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/yrwu-wk.ee.ntu.edu.tw\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/yrwu-wk.ee.ntu.edu.tw\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/yrwu-wk.ee.ntu.edu.tw\/index.php\/wp-json\/wp\/v2\/comments?post=2"}],"version-history":[{"count":13,"href":"https:\/\/yrwu-wk.ee.ntu.edu.tw\/index.php\/wp-json\/wp\/v2\/pages\/2\/revisions"}],"predecessor-version":[{"id":1498,"href":"https:\/\/yrwu-wk.ee.ntu.edu.tw\/index.php\/wp-json\/wp\/v2\/pages\/2\/revisions\/1498"}],"wp:attachment":[{"href":"https:\/\/yrwu-wk.ee.ntu.edu.tw\/index.php\/wp-json\/wp\/v2\/media?parent=2"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}