檢視 $DoEalloyfluc 的原始碼

Set Gaussian-like density of state. This model usually use for organic material or energy disorder material such as some leakage path for InGaN/GaN QB. It can also be used in amorphous Si, etc.. <br><br>
[[檔案:xxx1.png|width=400]]

<big><big>'''Format'''</big></big> 



* Type 11 is electron only <br>
* Type 12 is for electron only but with 2 states 

 $DoEalloyfluc 
 11 Nt Et σ

 $DoEalloyfluc 
 12 Nt1 Et1 σ2 Nt2 Et2 σ2

If the Gaussian peak level is above conduction band, then Et is positive. If the Gaussian peak value is below Ec, then the value is negative. <br>
Et is defined as Et = Et - Ec <br>


* Type 21 is hole only <br>
* Type 22 is hole only  but with 2 states <br>

 $DoEalloyfluc 
 21 Nt Eth σ

 $DoEalloyfluc 
 22 Nt1 Eth1 σ1 Nt2 Eth2 σ2

If the Gaussian peak level is above valence band, then Et is positive. If the Gaussian peak value is below Ev, then the value is negative. <br>
Eth is defined as Eth = Eth - Ev <br>

* Type 31 is electron and hole with 2 gaussian shape. The first one is for electron and the second one is for hole. 

 $DoEalloyfluc 
 31 Nt_e Et_e σ_e Nt_h Et_h σ_h

Where e means electron properties of DOS in this layer.

* Type 32 is electron and hole 4 gaussian 2 for electron 2 for hole 
 $DoEalloyfluc 
 32 Nt_e1 Et_e1 σ_e1 Nt_e2 Et_e2 σ_e2 Nt_h1 Et_h1 σ_h1 Nt_h2 Et_h2 σ_h2

Where e1 means electron properties of DOS1 and h2 means hole properties of DOS2.


<big><big>'''Parameter Explanation'''</big></big> <br />

Nt : Carrier concerntration. <math>(cm^{-3})</math><br />

Et : Depth of dos central and Ec/Ev. <math>(eV)</math><br />

sigma : FWHM of the gaussian distribution. <math>(eV)</math>