"$Electriccoe" 修訂間的差異
出自 DDCC TCAD TOOL Manual
| 行 23： | 行 23： | ||
Here record main parameter used in simulation. |
Here record main parameter used in simulation. |
||
every line record: |
every line record: |
||
| − | 1. volumenum: volume number which is the number we set in GMSH |
+ | 1. volumenum: volume number which is the number we set in GMSH |
| − | 2. Eg: material bandgap |
+ | 2. Eg: material bandgap |
| − | 3. Ecoff: band-off set (default is 0.63) |
+ | 3. Ecoff: band-off set (default is 0.63) |
| − | 4. epi: |
+ | 4. epi: |
| − | 5. charges: |
+ | 5. charges: |
| − | 6. ND: your doping value. p-type needs to add "-" and n-type keep positive. |
+ | 6. ND: your doping value. p-type needs to add "-" and n-type keep positive. |
| − | 7. Ea: activation energy for activating doping |
+ | 7. Ea: activation energy for activating doping |
| − | 8. impurity: impurity value. Also noticed the sign. |
+ | 8. impurity: impurity value. Also noticed the sign. |
| − | 9. meper: |
+ | 9. meper: parallel effective mass of electron |
| − | 10. |
+ | 10. mepar: parallel effective mass of electron |
| + | 11. mhh : The heavy hole effective mass |
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| + | 12. mlh : The light hole effective mass |
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| + | 13. polz: |
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| + | 14. poly: |
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| + | 15. polx: |
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| + | 16. mun: Electron mobility. (cm^2s^{-1}) |
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| + | 17. mup: Hole mobility. (cm^2s^{-1}) |
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| + | 18. taun: Electron carrier lifetime. (Sec.) |
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| + | 19. taup : Hole lifetime. (Sec.) |
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| + | 20. rad: radiative coefficient (B0) |
||
於 2018年7月27日 (五) 17:37 的修訂
Format:
$Electriccoe volumenum(i) Eg(i) Ecoff(i) ep(i) charges(i) ND(i) Ea(i) impurity(i) meper(i) mepar(i) mlh(i) mhh(i) polz(i) poly(i) polx(i) mun(i) mup(i) taun(i) taup(i) rad(i)
Example:
$Electriccoe 5 1 4.7828 0.6300 10.346 0.00000E+00 5.00000E+19 7.00000E-02 0.00000E+00 2.646E-01 2.500E-01 2.284E+00 1.936E-01 3.91000E+13 0.00E+00 0.00E+00 2.190E+01 2.000E+00 1.00E-08 1.00E-08 2.00E-11 2 4.7828 0.6300 10.346 0.00000E+00 5.00000E+19 7.00000E-02 1.00000E+17 2.646E-01 2.500E-01 2.284E+00 1.936E-01 3.91000E+13 0.00E+00 0.00E+00 2.190E+01 2.000E+00 1.00E-08 1.00E-08 2.00E-11 3 4.2702 0.6300 10.364 0.00000E+00 0.00000E+00 0.00000E+00 1.00000E+17 2.435E-01 2.308E-01 2.127E+00 1.717E-01 2.72675E+13 0.00E+00 0.00E+00 1.000E+02 1.000E+01 1.00E-08 1.00E-08 2.00E-11 4 4.7828 0.6300 10.346 0.00000E+00 0.00000E+00 0.00000E+00 1.00000E+17 2.646E-01 2.500E-01 2.284E+00 1.936E-01 3.91000E+13 0.00E+00 0.00E+00 1.000E+02 1.000E+01 1.00E-08 1.00E-08 2.00E-11 5 4.2702 0.6300 10.364 0.00000E+00 0.00000E+00 0.00000E+00 1.00000E+17 2.435E-01 2.308E-01 2.127E+00 1.717E-01 2.72675E+13 0.00E+00 0.00E+00 1.000E+02 1.000E+01 1.00E-08 1.00E-08 2.00E-11
Here record main parameter used in simulation.
every line record:
1. volumenum: volume number which is the number we set in GMSH
2. Eg: material bandgap
3. Ecoff: band-off set (default is 0.63)
4. epi:
5. charges:
6. ND: your doping value. p-type needs to add "-" and n-type keep positive.
7. Ea: activation energy for activating doping
8. impurity: impurity value. Also noticed the sign.
9. meper: parallel effective mass of electron
10. mepar: parallel effective mass of electron
11. mhh : The heavy hole effective mass
12. mlh : The light hole effective mass
13. polz:
14. poly:
15. polx:
16. mun: Electron mobility. (cm^2s^{-1})
17. mup: Hole mobility. (cm^2s^{-1})
18. taun: Electron carrier lifetime. (Sec.)
19. taup : Hole lifetime. (Sec.)
20. rad: radiative coefficient (B0)
