"$negfionizedimpurity" 修訂間的差異

出自 DDCC TCAD TOOL Manual
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Example:
 
Example:
 
$negfionizedimpurity
 
$negfionizedimpurity
doping density (S and D) doping density (channel) channel-i channel-f
 
  +
1e0 1e24 300 400
   
 
In this case we have 681 mesh grids from drain(left) to source(right), and the position of channel is from 300 to 400. The doping concentration for source and drain is <math>1*10^{24}(1/m^2)</math>, and that for channel is <math>1*10^{0}(1/m^2)</math>.<br>
 
In this case we have 681 mesh grids from drain(left) to source(right), and the position of channel is from 300 to 400. The doping concentration for source and drain is <math>1*10^{24}(1/m^2)</math>, and that for channel is <math>1*10^{0}(1/m^2)</math>.<br>

於 2018年7月30日 (一) 09:25 的修訂

$negfionizedimpurity is the command to setup the related parameters of ionized impurity scattering.
The equation of ionized impurity scattering:

 W_{imp}(k)=4\pi F(\frac{2k}{\lambda})^{2}[\frac{1}{\sin^2(\frac{\theta}{2})+(\frac{\lambda}{2k})^2}]^{2}
F=\frac{1}{\hbar}[\frac{Ze^{2}}{\epsilon}]^{2}\frac{N_{1D}(E_{k})}{32k^{4}}N_{I}
$negfionizedimpurity
doping density (S and D)   doping density (channel)   channel-i   channel-f

Example:

$negfionizedimpurity
 1e0  1e24   300   400

In this case we have 681 mesh grids from drain(left) to source(right), and the position of channel is from 300 to 400. The doping concentration for source and drain is 1*10^{24}(1/m^2), and that for channel is 1*10^{0}(1/m^2).
related commands:

 $ifsolvenegf,  $negfifscattering