「$DoEalloyfluc」：修訂間差異

出自DDCC TCAD TOOL Manual
跳至導覽 跳至搜尋
較新編輯 →
Jameshuang​（留言 | 貢獻）
224筆編輯
已建立頁面，內容為 "Set gaussian-like density of state. This model usually use for organic material or energy disorder material. <big><big>'''format'''</big></big> * type 1 is elect..."
 
Jameshuang​（留言 | 貢獻）
224筆編輯
無編輯摘要
第4行： 第4行：
<big><big>'''format'''</big></big>  
<big><big>'''format'''</big></big>  


* type 1 is electron only
* Type 1 is electron only
  $DoEalloyfluc  
  $DoEalloyfluc  
  11 Nt Et σ
  11 Nt Et σ


* type 2 is hole only  
* Type 2 is hole only  
  $DoEalloyfluc  
  $DoEalloyfluc  
  21 Nt Et σ
  21 Nt Et σ


* type 3 is electron and hole 2 gaussian 1 for electron 1 for hole
* Type 3 is electron and hole 2 gaussian 1 for electron 1 for hole
  $doealloyfluc  
  $doealloyfluc  
  31 Nt Et σ Nt Et σ
  31 Nt_e Et_e σ_e Nt_h Et_h σ_h


* type 4 is electron and hole 4 gaussian 2 for electron 2 for hole  
Where e means electron properties of DOS in this layer.
 
* Type 4 is electron and hole 4 gaussian 2 for electron 2 for hole  
  $doealloyfluc
  $doealloyfluc
  32 Nt_e Et σ Nt Et σ Nt Et σ Nt Et σ
  32 Nt_e1 Et_e1 σ_e1 Nt_e2 Et_e2 σ_e2 Nt_h1 Et_h1 σ_h1 Nt_h2 Et_h2 σ_h2
 
Where e1 means electron properties of DOS1 and h2 means hole properties of DOS2.
 
 
<big><big>'''parameter explanation'''</big></big> <br />
 
Nt : Carrier concerntration (Unit cm-3)<br />


Et : Depth of dos central and Ec/Ev (Unit eV)<br />


parameter explanation parameter explanation parameter explanation nt u8efbc9atotal carrier concerntration unit cm -3 ete u8efbc9athe depth of dos central and ec for example ec --------------- 0.1 ev trap gaussian central --------------- so ete should be set as -0.1 eth u8efbc9athe depth of dos central and ev for example trap gaussian central --------------- 0.1 ev ev --------------- so eth should be set as 0.1 sigma u8efbc9athe fwhm of the gaussian distribution. unit ev example example example doealloyfluc 31 1.00000e 21 0.0000 0.1500 1.00000e 21 0.0000 0.1300 31 1.00000e 21 0.0000 0.1500 1.00000e 21 0.0000 0.1500 32 1.00000e 17 0.0000 0.1110 8.00000e 19 -0.1200 0.3000 1.00000e 17 0.0000 0.1110 8.00000e 19 0.2200 0.3000 31 1.00000e 17 0.0000 0.1110 1.00000e 17 0.0000 0.1110 . . . 31 1.00000e 21 0.0000 0.0700 1.00000e 21 0.0000 0.0800
sigma : FWHM of the gaussian distribution. (Unit eV)

於 2017年8月15日 (二) 08:07 的修訂

Set gaussian-like density of state. This model usually use for organic material or energy disorder material.


format

  • Type 1 is electron only
$DoEalloyfluc 
11 Nt Et σ
  • Type 2 is hole only
$DoEalloyfluc 
21 Nt Et σ
  • Type 3 is electron and hole 2 gaussian 1 for electron 1 for hole
$doealloyfluc 
31 Nt_e Et_e σ_e Nt_h Et_h σ_h

Where e means electron properties of DOS in this layer.

  • Type 4 is electron and hole 4 gaussian 2 for electron 2 for hole
$doealloyfluc
32 Nt_e1 Et_e1 σ_e1 Nt_e2 Et_e2 σ_e2 Nt_h1 Et_h1 σ_h1 Nt_h2 Et_h2 σ_h2

Where e1 means electron properties of DOS1 and h2 means hole properties of DOS2.


parameter explanation

Nt : Carrier concerntration (Unit cm-3)

Et : Depth of dos central and Ec/Ev (Unit eV)

sigma : FWHM of the gaussian distribution. (Unit eV)

取自「https://yrwu-wk.ee.ntu.edu.tw/mediawiki/index.php?title=$DoEalloyfluc&oldid=144」