「*-cb.res」:修訂間差異
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Jameshuang(留言 | 貢獻) 無編輯摘要 |
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'''<big><big>Format</big></big>''' | '''<big><big>Format</big></big>''' | ||
<math>Position</math> <math>E_{c}</math> <math>E_{v}</math> <math>E_{fn}</math> <math>E_{fp}</math> <math>n</math> <math>p</math> <math>J_{n}</math> <math>J_{p}</math> <math>R_{rad}</math> <math>R_{non}</math> <math>R_{auger}</math> <math>E_{b}</math> <math>E_{bh}</math> <math>G_{gen}</math> <math>{N_{d}}^+</math> <math>{N_{a}}^{-}</math> <math>R_{impact}</math> | <math>Position</math> <math>E_{c}</math> <math>E_{v}</math> <math>E_{fn}</math> <math>E_{fp}</math> <math>n</math> <math>p</math> <math>J_{n}</math> <math>J_{p}</math> <math>R_{rad}</math> <math>R_{non}</math> <math>R_{auger}</math> <math>E_{b}</math> <math>E_{bh}</math> <math>G_{gen}</math> <math>{N_{d}}^+</math> <math>{N_{a}}^{-}</math> <math>R_{impact}</math> <math> 1/u_{c}</math> <math> 1/u_{hh}</math> <math> 1/u_{lh}</math> <math> \vec{E}</math> <math> \mu_{n}</math> <math> \mu_{p} </math> <math> u_{c}</math> <math> u_{lh}</math> <math> u_{hh}</math> <math> N_{trap,effective}</math> <math> R_{stim}</math> <math> layer_num</math> | ||
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*<math>R_{impact}</math> : Impact ionization rate.<math>(cm^{-3}s^{-1})</math> | *<math>R_{impact}</math> : Impact ionization rate.<math>(cm^{-3}s^{-1})</math> | ||
<math> 1/u_{c}</math> : effective electron quantum potential | |||
<math> 1/u_{hh}</math> : effective heavy hole quantum potential | |||
<math> 1/u_{lh}</math> : effective light hole quantum potential | |||
<math> \vec{E}</math> : electrical field | |||
<math> \mu_{n}</math> : electron mobility | |||
<math> \mu_{p} </math> : hole mobility | |||
<math> u_{c}</math> : u of electron solved by localized landscape theory | |||
<math> u_{lh}</math> : u of heavy hole solved by localized landscape theory | |||
<math> u_{hh}</math> : u of light hole solved by localized landscape theory | |||
<math> N_{trap,effective}</math>: net trapped charges | |||
<math> R_{stim}</math> :Stimulate emission rate <math>1/cm^{3}/s</math> | |||
<math> layer_num</math>: layer number | |||
於 2019年10月23日 (三) 15:11 的修訂
Output file about band structure, carrier distribution and recombination.
Format
Parameter Explanation
- : Applied Voltage.
- : Energy of conduction band.
- : Energy of valance band.
- : Fermi lever of electron.
- : Fermi lever of electron.
- : Carrier density of electron.
- : Carrier density of hole.
- : Current density of electron.
- : Current density of hole.
- : Radiative recombination rate.
- : Non-radiative recombination rate.
- : Auger recombination rate.
- : Work with Schrodinger solver, shows the highest position of confined eigen state.
- : work with Schrodinger solver, shows the lowest position of confined eigen state.
- : Generation.
- : Activated donor dopant.
- : Activated accept dopant.
- : Impact ionization rate.
: effective electron quantum potential : effective heavy hole quantum potential : effective light hole quantum potential : electrical field : electron mobility : hole mobility : u of electron solved by localized landscape theory : u of heavy hole solved by localized landscape theory : u of light hole solved by localized landscape theory : net trapped charges :Stimulate emission rate : layer number