"$parameters" 修訂間的差異

出自 DDCC TCAD TOOL Manual
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<big><big>'''Parameter Explanation</big></big>'''
 
<big><big>'''Parameter Explanation</big></big>'''
   
* Dope : The doping concentration of the material. <math>cm^{-3}</math>
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* Dope : The doping concentration of the material. <math>(cm^{-3})</math>
   
* Ea : The activation energy of the material. <math>eV</math>
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* Ea : The activation energy of the material. <math>(eV)</math>
   
* Eg : The bandgap of the material. <math>eV</math>
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* Eg : The bandgap of the material. <math>(eV)</math>
   
 
* dix : The relative dielectric constant in x-direction.
 
* dix : The relative dielectric constant in x-direction.
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* Eoff : The conduction iband offset of this layer and next layer.
 
* Eoff : The conduction iband offset of this layer and next layer.
   
* m0off : The parallel effective mass of electron. <math>m_0</math>
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* m0off : The parallel effective mass of electron. <math>(m_0)</math>
   
* m0in : The perpendicular effective mass of electron. <math>m_0</math>
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* m0in : The perpendicular effective mass of electron. <math>(m_0)</math>
   
* mhh : The heavy hole effective mass. <math>m_0</math>
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* mhh : The heavy hole effective mass. <math>(m_0)</math>
   
* mlh : The light hole effective mass. <math>m_0</math>
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* mlh : The light hole effective mass. <math>(m_0)</math>
   
* impurity : The background doping concentration. <math>cm^{-3}</math>
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* impurity : The background doping concentration. <math>(cm^{-3})</math>
   
* mun : Electron mobility. <math>cm^2s^{-1}</math>
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* mun : Electron mobility. <math>(cm^2s^{-1})</math>
   
* mup : Hole mobility. <math>cm^2s^{-1}</math>
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* mup : Hole mobility. <math>(cm^2s^{-1})</math>
   
* taun : Electron carrier lifetime. <math>Sec.</math>
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* taun : Electron carrier lifetime. <math>(Sec.)</math>
   
* taup : Hole lifetime. <math>Sec.</math>
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* taup : Hole lifetime. <math>(Sec.)</math>
   
   

於 2017年8月17日 (四) 10:20 的修訂

Function to assign the related information of each layer.


Format

$parameters
dope    ea    eg    dix    diy    eoff    m0off    m0in     mhh     mlh    impurity    mun     mup     taun     taup



Parameter Explanation

  • Dope : The doping concentration of the material. (cm^{-3})
  • Ea : The activation energy of the material. (eV)
  • Eg : The bandgap of the material. (eV)
  • dix : The relative dielectric constant in x-direction.
  • diy : The relative dielectric constant in y-direction.
  • Eoff : The conduction iband offset of this layer and next layer.
  • m0off : The parallel effective mass of electron. (m_0)
  • m0in : The perpendicular effective mass of electron. (m_0)
  • mhh : The heavy hole effective mass. (m_0)
  • mlh : The light hole effective mass. (m_0)
  • impurity : The background doping concentration. (cm^{-3})
  • mun : Electron mobility. (cm^2s^{-1})
  • mup : Hole mobility. (cm^2s^{-1})
  • taun : Electron carrier lifetime. (Sec.)
  • taup : Hole lifetime. (Sec.)


Example

$parameters 
0.0e 00 0.000 1.12 11.7 11.7 0.79 1.08 1.08 0.16 0.49 8.0e 15 1.2e 03 4.4e 02 1.3e-05 1.3e-05 -5.0e 17 0.045 1.12 11.7 11.7 0.79 1.08 1.08 0.16 0.49 0.0e 00 6.7e 02 3.2e 02 3.0e-09 3.0e-09