「Formula for field dependent mobility」:修訂間差異
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已建立頁面,內容為 " For semiconductor material, there are many field dependent mobility model. It is hard to get one equations fitted with all materials. Hence, the field dependent mo..." |
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<math> \vec{E} </math> is in the same direction of current. If the direction is different, it means it is diffusion and it would be equal to low field mobilty | |||
<math> | <math> v = \frac{\vec{E} p_{1} + p_{2} \left( \frac{\vec{E}}{p_{3}} \right)^{p_4} }{ 1+ \left( \frac{\vec{E}}{p_{3}} \right)^{p_{4}} + p_{5}\left( \frac{\vec{E}}{p_{3}} \right)^{p_{6}} } </math> | ||
<math> \mu = v / |\vec{E}| </math> | |||
於 2021年7月20日 (二) 01:24 的最新修訂
For semiconductor material, there are many field dependent mobility model. It is hard to get one equations fitted with all materials. Hence, the field dependent mobility model is case dependent. Usually it can be described by model fitting. However, we still define some equations that people proposed to be used in DDCC. For 2D-DDCC, the field dependent mobility model can be defined by different type
type: 1 is in the same direction of current. If the direction is different, it means it is diffusion and it would be equal to low field mobilty