「$doping」：修訂間差異
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Jameshuang（留言 | 貢獻） 已建立頁面，內容為 "Setting of doping region for each layer. '''<big><big>Format</big></big>''' $doping N L Nd Ea '''<big><big>Parameter explaination</big></big>''' * N : number of..." |
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2500.0 1.00e+18 25.0 | 2500.0 1.00e+18 25.0 | ||
This setting means region of 0-500A has 1e16 doping concertraion, 500-2000A has 1e17 doping concentraion, 2000-2500A has 1e18 doping concentraion. And their activation energy is 25meV. | This setting means region of 0-500A has 1e16 doping concertraion, 500-2000A has 1e17 doping concentraion, 2000-2500A has 1e18 doping concentraion. And their activation energy is 25meV.<br> | ||
<big>'''The $doping setting for 1D-DDCC in GUI interface '''</big> <br> | |||
[[檔案:1d_$gatebias_fig1.jpg|1300px]] | |||
於 2024年9月24日 (二) 14:09 的修訂
Setting of doping region for each layer.
Format
$doping N L Nd Ea
Parameter explaination
- N : number of contiguous doping region
- Nd : doping concentration.
- Ea : Activation energy.
Example
$doping 3 500.0 1.00e+16 25.0 2000.0 1.00e+17 25.0 2500.0 1.00e+18 25.0
This setting means region of 0-500A has 1e16 doping concertraion, 500-2000A has 1e17 doping concentraion, 2000-2500A has 1e18 doping concentraion. And their activation energy is 25meV.
The $doping setting for 1D-DDCC in GUI interface
