"$doping" 修訂間的差異

出自 DDCC TCAD TOOL Manual
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<big>'''The $doping setting for 1D-DDCC in GUI interface '''</big> <br>
 
<big>'''The $doping setting for 1D-DDCC in GUI interface '''</big> <br>
   
[[檔案:1d_$gatebias_fig1.jpg|1300px]]
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[[檔案:1d_$doping_fig1.jpg|1300px]]

於 2024年9月24日 (二) 22:09 的最新修訂

Setting of doping region for each layer.

Format

$doping
N
L Nd Ea

Parameter explaination

  • N : number of contiguous doping region (\AA)
  • Nd : doping concentration. N_A(+) or N_D(-) (eV^{-1/2})
  • Ea : Activation energy. (meV)

Example

$doping
3
500.0 1.00e+16 25.0
2000.0 1.00e+17 25.0
2500.0 1.00e+18 25.0 

This setting means region of 0-500A has 1e16 doping concertraion, 500-2000A has 1e17 doping concentraion, 2000-2500A has 1e18 doping concentraion. And their activation energy is 25meV.

The $doping setting for 1D-DDCC in GUI interface

1d $doping fig1.jpg