"$Electriccoe" 修訂間的差異
出自 DDCC TCAD TOOL Manual
(未顯示由 1 位使用者於中間所作的 2 次修訂) | |||
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$Electriccoe |
$Electriccoe |
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− | volumenum(i) Eg(i) Ecoff(i) ep(i) charges(i) ND(i) Ea(i) impurity(i) meper(i) mepar(i) |
+ | volumenum(i) Eg(i) Ecoff(i) ep(i) charges(i) ND(i) Ea(i) impurity(i) meper(i) mepar(i) mhh(i) mlh(i) polz(i) poly(i) polx(i) mun(i) mup(i) taun(i) taup(i) rad(i) |
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2. Eg: material bandgap |
2. Eg: material bandgap |
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3. Ecoff: band-off set (default is 0.63) |
3. Ecoff: band-off set (default is 0.63) |
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− | 4. epi: |
+ | 4. epi: dielectric constant |
5. charges: |
5. charges: |
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6. ND: your doping value. p-type needs to add "-" and n-type keep positive. |
6. ND: your doping value. p-type needs to add "-" and n-type keep positive. |
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11. mhh : The heavy hole effective mass |
11. mhh : The heavy hole effective mass |
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12. mlh : The light hole effective mass |
12. mlh : The light hole effective mass |
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− | 13. polz: |
+ | 13. polz: x polarization charge |
− | 14. poly: |
+ | 14. poly: y polarization charge |
− | 15. polx: |
+ | 15. polx: z polarization charge |
16. mun: Electron mobility. (cm^2s^{-1}) |
16. mun: Electron mobility. (cm^2s^{-1}) |
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17. mup: Hole mobility. (cm^2s^{-1}) |
17. mup: Hole mobility. (cm^2s^{-1}) |
於 2021年10月22日 (五) 22:40 的最新修訂
Format:
$Electriccoe volumenum(i) Eg(i) Ecoff(i) ep(i) charges(i) ND(i) Ea(i) impurity(i) meper(i) mepar(i) mhh(i) mlh(i) polz(i) poly(i) polx(i) mun(i) mup(i) taun(i) taup(i) rad(i)
Example:
$Electriccoe 5 1 4.7828 0.6300 10.346 0.00000E+00 5.00000E+19 7.00000E-02 0.00000E+00 2.646E-01 2.500E-01 2.284E+00 1.936E-01 3.91000E+13 0.00E+00 0.00E+00 2.190E+01 2.000E+00 1.00E-08 1.00E-08 2.00E-11 2 4.7828 0.6300 10.346 0.00000E+00 5.00000E+19 7.00000E-02 1.00000E+17 2.646E-01 2.500E-01 2.284E+00 1.936E-01 3.91000E+13 0.00E+00 0.00E+00 2.190E+01 2.000E+00 1.00E-08 1.00E-08 2.00E-11 3 4.2702 0.6300 10.364 0.00000E+00 0.00000E+00 0.00000E+00 1.00000E+17 2.435E-01 2.308E-01 2.127E+00 1.717E-01 2.72675E+13 0.00E+00 0.00E+00 1.000E+02 1.000E+01 1.00E-08 1.00E-08 2.00E-11 4 4.7828 0.6300 10.346 0.00000E+00 0.00000E+00 0.00000E+00 1.00000E+17 2.646E-01 2.500E-01 2.284E+00 1.936E-01 3.91000E+13 0.00E+00 0.00E+00 1.000E+02 1.000E+01 1.00E-08 1.00E-08 2.00E-11 5 4.2702 0.6300 10.364 0.00000E+00 0.00000E+00 0.00000E+00 1.00000E+17 2.435E-01 2.308E-01 2.127E+00 1.717E-01 2.72675E+13 0.00E+00 0.00E+00 1.000E+02 1.000E+01 1.00E-08 1.00E-08 2.00E-11
Here record main parameter used in simulation.
every line record:
1. volumenum: volume number which is the number we set in GMSH 2. Eg: material bandgap 3. Ecoff: band-off set (default is 0.63) 4. epi: dielectric constant 5. charges: 6. ND: your doping value. p-type needs to add "-" and n-type keep positive. 7. Ea: activation energy for activating doping 8. impurity: impurity value. Also noticed the sign. 9. meper: parallel effective mass of electron 10. mepar: parallel effective mass of electron 11. mhh : The heavy hole effective mass 12. mlh : The light hole effective mass 13. polz: x polarization charge 14. poly: y polarization charge 15. polx: z polarization charge 16. mun: Electron mobility. (cm^2s^{-1}) 17. mup: Hole mobility. (cm^2s^{-1}) 18. taun: Electron carrier lifetime. (Sec.) 19. taup : Hole lifetime. (Sec.) 20. rad: radiative coefficient (B0)