"$parameters" 修訂間的差異
出自 DDCC TCAD TOOL Manual
Jameshuang (對話 | 貢獻) (已建立頁面，內容為 "Function to assign the related information of each layer. <big><big>'''Format'''</big></big> $parameters dope ea eg &n...") |
Jameshuang (對話 | 貢獻) |
||
| 行 13： | 行 13： | ||
<big><big>'''Parameter Explanation</big></big>''' |
<big><big>'''Parameter Explanation</big></big>''' |
||
| − | Dope : The doping concentration of the material. |
+ | Dope : The doping concentration of the material. <math>cm^{-3}</math> |
| − | Ea : The activation energy of the material. |
+ | Ea : The activation energy of the material. <math>eV</math> |
| − | Eg : The bandgap of the material. |
+ | Eg : The bandgap of the material. <math>eV</math> |
dix : The relative dielectric constant in x-direction. |
dix : The relative dielectric constant in x-direction. |
||
| 行 25： | 行 25： | ||
Eoff : The conduction iband offset of this layer and next layer. |
Eoff : The conduction iband offset of this layer and next layer. |
||
| − | m0off : The parallel effective mass of electron. |
+ | m0off : The parallel effective mass of electron. <math>m_0</math> |
| − | m0in : The perpendicular effective mass of electron. |
+ | m0in : The perpendicular effective mass of electron. <math>m_0</math> |
| − | mhh : The heavy hole effective mass. |
+ | mhh : The heavy hole effective mass. <math>m_0</math> |
| − | mlh : The light hole effective mass. |
+ | mlh : The light hole effective mass. <math>m_0</math> |
| − | impurity : The background doping concentration. |
+ | impurity : The background doping concentration. <math>cm^{-3}</math> |
| − | mun : Electron mobility. |
+ | mun : Electron mobility. <math>cm^2s^{-1}</math> |
| − | mup : Hole mobility. |
+ | mup : Hole mobility. <math>cm^2s^{-1}</math> |
| − | taun : Electron carrier lifetime. |
+ | taun : Electron carrier lifetime. <math>Sec.</math> |
| − | taup : Hole lifetime. |
+ | taup : Hole lifetime. <math>Sec.</math> |
於 2017年8月17日 (四) 09:58 的修訂
Function to assign the related information of each layer.
Format
$parameters dope ea eg dix diy eoff m0off m0in mhh mlh impurity mun mup taun taup
Parameter Explanation
Dope : The doping concentration of the material. 
Ea : The activation energy of the material. 
Eg : The bandgap of the material.
dix : The relative dielectric constant in x-direction.
diy : The relative dielectric constant in y-direction.
Eoff : The conduction iband offset of this layer and next layer.
m0off : The parallel effective mass of electron. 
m0in : The perpendicular effective mass of electron.
mhh : The heavy hole effective mass.
mlh : The light hole effective mass.
impurity : The background doping concentration.
mun : Electron mobility. 
mup : Hole mobility.
taun : Electron carrier lifetime. 
taup : Hole lifetime.
Example
$parameters 0.0e 00 0.000 1.12 11.7 11.7 0.79 1.08 1.08 0.16 0.49 8.0e 15 1.2e 03 4.4e 02 1.3e-05 1.3e-05 -5.0e 17 0.045 1.12 11.7 11.7 0.79 1.08 1.08 0.16 0.49 0.0e 00 6.7e 02 3.2e 02 3.0e-09 3.0e-09
