「$parameters」：修訂間差異
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<big><big>'''Parameter Explanation</big></big>''' | <big><big>'''Parameter Explanation</big></big>''' | ||
* Dope : The doping concentration of the material. <math>cm^{-3}</math> | * Dope : The doping concentration of the material. <math>(cm^{-3})</math> | ||
* Ea : The activation energy of the material. <math>eV</math> | * Ea : The activation energy of the material. <math>(eV)</math> | ||
* Eg : The bandgap of the material. <math>eV</math> | * Eg : The bandgap of the material. <math>(eV)</math> | ||
* dix : The relative dielectric constant in x-direction. | * dix : The relative dielectric constant in x-direction. | ||
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* Eoff : The conduction iband offset of this layer and next layer. | * Eoff : The conduction iband offset of this layer and next layer. | ||
* m0off : The parallel effective mass of electron. <math>m_0</math> | * m0off : The parallel effective mass of electron. <math>(m_0)</math> | ||
* m0in : The perpendicular effective mass of electron. <math>m_0</math> | * m0in : The perpendicular effective mass of electron. <math>(m_0)</math> | ||
* mhh : The heavy hole effective mass. <math>m_0</math> | * mhh : The heavy hole effective mass. <math>(m_0)</math> | ||
* mlh : The light hole effective mass. <math>m_0</math> | * mlh : The light hole effective mass. <math>(m_0)</math> | ||
* impurity : The background doping concentration. <math>cm^{-3}</math> | * impurity : The background doping concentration. <math>(cm^{-3})</math> | ||
* mun : Electron mobility. <math>cm^2s^{-1}</math> | * mun : Electron mobility. <math>(cm^2s^{-1})</math> | ||
* mup : Hole mobility. <math>cm^2s^{-1}</math> | * mup : Hole mobility. <math>(cm^2s^{-1})</math> | ||
* taun : Electron carrier lifetime. <math>Sec.</math> | * taun : Electron carrier lifetime. <math>(Sec.)</math> | ||
* taup : Hole lifetime. <math>Sec.</math> | * taup : Hole lifetime. <math>(Sec.)</math> | ||
於 2017年8月17日 (四) 02:20 的修訂
Function to assign the related information of each layer.
Format
$parameters dope ea eg dix diy eoff m0off m0in mhh mlh impurity mun mup taun taup
Parameter Explanation
- Dope : The doping concentration of the material.
- Ea : The activation energy of the material.
- Eg : The bandgap of the material.
- dix : The relative dielectric constant in x-direction.
- diy : The relative dielectric constant in y-direction.
- Eoff : The conduction iband offset of this layer and next layer.
- m0off : The parallel effective mass of electron.
- m0in : The perpendicular effective mass of electron.
- mhh : The heavy hole effective mass.
- mlh : The light hole effective mass.
- impurity : The background doping concentration.
- mun : Electron mobility.
- mup : Hole mobility.
- taun : Electron carrier lifetime.
- taup : Hole lifetime.
Example
$parameters 0.0e 00 0.000 1.12 11.7 11.7 0.79 1.08 1.08 0.16 0.49 8.0e 15 1.2e 03 4.4e 02 1.3e-05 1.3e-05 -5.0e 17 0.045 1.12 11.7 11.7 0.79 1.08 1.08 0.16 0.49 0.0e 00 6.7e 02 3.2e 02 3.0e-09 3.0e-09