"$1Daddefmas" 修訂間的差異
出自 DDCC TCAD TOOL Manual
| 行 8： | 行 8： | ||
I_effective_type is the input type. The default should be 1. The typical semiconductor material has heavy hole, light hole, and electron effective mass of direct band. The type 1 is used. |
I_effective_type is the input type. The default should be 1. The typical semiconductor material has heavy hole, light hole, and electron effective mass of direct band. The type 1 is used. |
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| − | For I_effective_type= 1, <math> m_{hh,z} ~~ m_{hh,x}~~ m_{hh,y}~~m_{lh,z} ~~ m_{lh,x}~~ m_{lh,y} ~~m_{e,z} ~~ m_{e,x}~~ m_{hh,y}~~ |
+ | For I_effective_type= 1, <math> m_{hh,z} ~~ m_{hh,x}~~ m_{hh,y}~~m_{lh,z} ~~ m_{lh,x}~~ m_{lh,y} ~~m_{e,z} ~~ m_{e,x}~~ m_{hh,y}~~ N_{valley}..</math> |
| − | For I_effective_type= 2, <math> m_{hh,z} ~~ m_{hh,x}~~ m_{hh,y}~~m_{lh,z} ~~ m_{lh,x}~~ m_{lh,y} ~~m_{e,z} ~~ m_{e,x}~~ m_{hh,y}~~ |
+ | For I_effective_type= 2, <math> m_{hh,z} ~~ m_{hh,x}~~ m_{hh,y}~~m_{lh,z} ~~ m_{lh,x}~~ m_{lh,y} ~~m_{e,z} ~~ m_{e,x}~~ m_{hh,y}~~ N_{valley}~~m_{e,z,2nd valley} ~~ m_{e,x,2nd valley}~~ m_{hh,y,2nd valley}~~ N_{valley}..</math> |
| − | z is the calculation direction of 1D program. If there is a QW, z is the confined direction in the 1D program. |
+ | z is the calculation direction of 1D program. If there is a QW, z is the confined direction in the 1D program. <math>N_{valley}</math> is the valley number of electrons |
For example, for a material like GaN effective mass for HH is 1.8, LH=0.17, and the electron is 0.21 in the growth direction and 0.2 in the x,y direction. We set |
For example, for a material like GaN effective mass for HH is 1.8, LH=0.17, and the electron is 0.21 in the growth direction and 0.2 in the x,y direction. We set |
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於 2023年2月27日 (一) 15:09 的修訂
$1Daddefmas is the function to add additional effective mass information for electron and holes. In some cases, the electron's (holes) effective mass in different directions are different. Hence the new functions is to put additional information for the program to calculate.
$1Daddefmas
I_effective_type
解析失敗 (PNG 轉換失敗；請檢查是否正確安裝了 latex 與 dvipng (或 dvips + gs + convert)): m_{hh,z} ~~ m_{hh,x}~~ m_{hh,y}~~m_{lh,z} ~~ m_{lh,x}~~ m_{lh,y} ~~m_{e,z} ~~ m_{e,x}~~ m_{hh,y} N_e_valley..
解析失敗 (PNG 轉換失敗；請檢查是否正確安裝了 latex 與 dvipng (或 dvips + gs + convert)): m_{hh,z} ~~ m_{hh,x}~~ m_{hh,y}~~m_{lh,z} ~~ m_{lh,x}~~ m_{lh,y} ~~m_{e,z} ~~ m_{e,x}~~ m_{hh,y} N_e_valley..
... to N layers
I_effective_type is the input type. The default should be 1. The typical semiconductor material has heavy hole, light hole, and electron effective mass of direct band. The type 1 is used.
For I_effective_type= 1, 
For I_effective_type= 2, 
z is the calculation direction of 1D program. If there is a QW, z is the confined direction in the 1D program.is the valley number of electrons
For example, for a material like GaN effective mass for HH is 1.8, LH=0.17, and the electron is 0.21 in the growth direction and 0.2 in the x,y direction. We set
$1Daddefmas 1 1.8 1.8 1.8 0.17 0.17 0.17 0.21 0.2 0.2 1.8 1.8 1.8 0.17 0.17 0.17 0.21 0.2 0.2 1.8 1.8 1.8 0.17 0.17 0.17 0.21 0.2 0.2 .... to N layers
For example, for a material effective mass for HH_growth direction is 1.4 in the other two directions are 0.7 and 0.9, LH=0.17, and electron is 0.21 in the growth direction and 0.2 in the x,y direction, we set
$1Daddefmas 1 1.4 0.7 0.9 0.17 0.17 0.17 0.21 0.2 0.2 1.4 0.7 0.9 0.17 0.17 0.17 0.21 0.2 0.2 1.4 0.7 0.9 0.17 0.17 0.17 0.21 0.2 0.2 .... to N layers
Actually, the simulation program, it mainly uses the density of state effective mass. The different direction's effective mass will be put together as
For conduction band:
For the valence band
For the Schrodinger solver, it will use m_z to calculate the quantum confinement effects. The equation will solve
