「2D GaN Vertical MOSFET」：修訂間差異
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建立內容為「1. 2D_GaN Vertical MOSFET_Build a structure (material region setting)<br> 2. 2D_GaN Vertical MOSFET_Set up the material parameters<br> 3. 2D_GaN Vertical MOSFET_Additional functions<br> 4. 2D_GaN Vertical MOSFET_Mesh setting<br> 5. 2D_GaN Vertical MOSFET_Bias and Schottky barrier setting<br> 6. 2D_GaN Vertical MOSFET_Run the simulation<br> 7. 2D_GaN Vertical MOSFET_View the results<br>」的新頁面 |
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6. [[2D_GaN Vertical MOSFET_Run the simulation]]<br> | 6. [[2D_GaN Vertical MOSFET_Run the simulation]]<br> | ||
7. [[2D_GaN Vertical MOSFET_View the results]]<br> | 7. [[2D_GaN Vertical MOSFET_View the results]]<br> | ||
8. [[2D_GaN Vertical MOSFET_ITRI_settingfile]]<br> | |||
於 2026年6月23日 (二) 10:33 的修訂
1. 2D_GaN Vertical MOSFET_Build a structure (material region setting)
2. 2D_GaN Vertical MOSFET_Set up the material parameters
3. 2D_GaN Vertical MOSFET_Additional functions
4. 2D_GaN Vertical MOSFET_Mesh setting
5. 2D_GaN Vertical MOSFET_Bias and Schottky barrier setting
6. 2D_GaN Vertical MOSFET_Run the simulation
7. 2D_GaN Vertical MOSFET_View the results
8. 2D_GaN Vertical MOSFET_ITRI_settingfile