"$DoEalloyfluc" 修訂間的差異
出自 DDCC TCAD TOOL Manual
Jameshuang (對話 | 貢獻) |
Jameshuang (對話 | 貢獻) |
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<big><big>'''Parameter Explanation'''</big></big> <br /> |
<big><big>'''Parameter Explanation'''</big></big> <br /> |
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| − | Nt : Carrier concerntration <math>(cm^{-3})</math><br /> |
+ | Nt : Carrier concerntration. <math>(cm^{-3})</math><br /> |
| − | Et : Depth of dos central and Ec/Ev <math>(eV)</math><br /> |
+ | Et : Depth of dos central and Ec/Ev. <math>(eV)</math><br /> |
sigma : FWHM of the gaussian distribution. <math>(eV)</math> |
sigma : FWHM of the gaussian distribution. <math>(eV)</math> |
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於 2017年8月15日 (二) 16:53 的修訂
Set gaussian-like density of state. This model usually use for organic material or energy disorder material.
Format
- Type 1 is electron only
$DoEalloyfluc 11 Nt Et σ
- Type 2 is hole only
$DoEalloyfluc 21 Nt Et σ
- Type 3 is electron and hole 2 gaussian 1 for electron 1 for hole
$doealloyfluc 31 Nt_e Et_e σ_e Nt_h Et_h σ_h
Where e means electron properties of DOS in this layer.
- Type 4 is electron and hole 4 gaussian 2 for electron 2 for hole
$doealloyfluc 32 Nt_e1 Et_e1 σ_e1 Nt_e2 Et_e2 σ_e2 Nt_h1 Et_h1 σ_h1 Nt_h2 Et_h2 σ_h2
Where e1 means electron properties of DOS1 and h2 means hole properties of DOS2.
Parameter Explanation
Nt : Carrier concerntration. 
Et : Depth of dos central and Ec/Ev. 
sigma : FWHM of the gaussian distribution.
