「$DoEalloyfluc」：修訂間差異
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Jameshuang（留言 | 貢獻） 無編輯摘要 |
Jameshuang（留言 | 貢獻） 無編輯摘要 |
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<big><big>'''Parameter Explanation'''</big></big> <br /> | <big><big>'''Parameter Explanation'''</big></big> <br /> | ||
Nt : Carrier concerntration <math>(cm^{-3})</math><br /> | Nt : Carrier concerntration. <math>(cm^{-3})</math><br /> | ||
Et : Depth of dos central and Ec/Ev <math>(eV)</math><br /> | Et : Depth of dos central and Ec/Ev. <math>(eV)</math><br /> | ||
sigma : FWHM of the gaussian distribution. <math>(eV)</math> | sigma : FWHM of the gaussian distribution. <math>(eV)</math> | ||
於 2017年8月15日 (二) 08:53 的修訂
Set gaussian-like density of state. This model usually use for organic material or energy disorder material.
Format
- Type 1 is electron only
$DoEalloyfluc 11 Nt Et σ
- Type 2 is hole only
$DoEalloyfluc 21 Nt Et σ
- Type 3 is electron and hole 2 gaussian 1 for electron 1 for hole
$doealloyfluc 31 Nt_e Et_e σ_e Nt_h Et_h σ_h
Where e means electron properties of DOS in this layer.
- Type 4 is electron and hole 4 gaussian 2 for electron 2 for hole
$doealloyfluc 32 Nt_e1 Et_e1 σ_e1 Nt_e2 Et_e2 σ_e2 Nt_h1 Et_h1 σ_h1 Nt_h2 Et_h2 σ_h2
Where e1 means electron properties of DOS1 and h2 means hole properties of DOS2.
Parameter Explanation
Nt : Carrier concerntration.
Et : Depth of dos central and Ec/Ev.
sigma : FWHM of the gaussian distribution.