"$DoEalloyfluc" 修訂間的差異
出自 DDCC TCAD TOOL Manual
Jameshuang (對話 | 貢獻) |
Jameshuang (對話 | 貢獻) |
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| 行 13： | 行 13： | ||
* Type 3 is electron and hole 2 gaussian 1 for electron 1 for hole |
* Type 3 is electron and hole 2 gaussian 1 for electron 1 for hole |
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| − | $doealloyfluc |
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| + | $DoEalloyfluc |
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31 Nt_e Et_e σ_e Nt_h Et_h σ_h |
31 Nt_e Et_e σ_e Nt_h Et_h σ_h |
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| 行 19： | 行 19： | ||
* Type 4 is electron and hole 4 gaussian 2 for electron 2 for hole |
* Type 4 is electron and hole 4 gaussian 2 for electron 2 for hole |
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| − | $doealloyfluc |
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| + | $DoEalloyfluc |
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32 Nt_e1 Et_e1 σ_e1 Nt_e2 Et_e2 σ_e2 Nt_h1 Et_h1 σ_h1 Nt_h2 Et_h2 σ_h2 |
32 Nt_e1 Et_e1 σ_e1 Nt_e2 Et_e2 σ_e2 Nt_h1 Et_h1 σ_h1 Nt_h2 Et_h2 σ_h2 |
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於 2017年8月16日 (三) 03:40 的修訂
Set gaussian-like density of state. This model usually use for organic material or energy disorder material.
Format
- Type 1 is electron only
$DoEalloyfluc 11 Nt Et σ
- Type 2 is hole only
$DoEalloyfluc 21 Nt Et σ
- Type 3 is electron and hole 2 gaussian 1 for electron 1 for hole
$DoEalloyfluc 31 Nt_e Et_e σ_e Nt_h Et_h σ_h
Where e means electron properties of DOS in this layer.
- Type 4 is electron and hole 4 gaussian 2 for electron 2 for hole
$DoEalloyfluc 32 Nt_e1 Et_e1 σ_e1 Nt_e2 Et_e2 σ_e2 Nt_h1 Et_h1 σ_h1 Nt_h2 Et_h2 σ_h2
Where e1 means electron properties of DOS1 and h2 means hole properties of DOS2.
Parameter Explanation
Nt : Carrier concerntration. 
Et : Depth of dos central and Ec/Ev. 
sigma : FWHM of the gaussian distribution.
