"*-cb.res" 修訂間的差異
出自 DDCC TCAD TOOL Manual
Jameshuang (對話 | 貢獻) (已建立頁面，內容為 "Output file about band structure, carrier distribution and recombination. '''<big><big>Format</big></big>''' <math>Position</math> <math>E_{c}</math> <math>E_{...") |
Jameshuang (對話 | 貢獻) |
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| 行 11： | 行 11： | ||
| − | <math>Position</math> : Applied Voltage. <math>(cm)</math> |
+ | *<math>Position</math> : Applied Voltage. <math>(cm)</math> |
| − | <math>E_{c}</math> : Energy of conduction band. <math>(eV)</math> |
+ | *<math>E_{c}</math> : Energy of conduction band. <math>(eV)</math> |
| − | <math>E_{v}</math> : Energy of valance band. <math>(eV)</math> |
+ | *<math>E_{v}</math> : Energy of valance band. <math>(eV)</math> |
| − | <math>E_{fn}</math> : Fermi lever of electron. <math>(eV)</math> |
+ | *<math>E_{fn}</math> : Fermi lever of electron. <math>(eV)</math> |
| − | <math>E_{fp}</math> : Fermi lever of electron. <math>(eV)</math> |
+ | *<math>E_{fp}</math> : Fermi lever of electron. <math>(eV)</math> |
| − | <math>n</math> : Carrier density of electron. <math>(cm^{-3})</math> |
+ | *<math>n</math> : Carrier density of electron. <math>(cm^{-3})</math> |
| − | <math>p</math> : Carrier density of hole. <math>(cm^{-3})</math> |
+ | *<math>p</math> : Carrier density of hole. <math>(cm^{-3})</math> |
| − | <math>J_{n}</math> : Current density of electron.<math>(Acm^{-2})</math> |
+ | *<math>J_{n}</math> : Current density of electron.<math>(Acm^{-2})</math> |
| − | <math>J_{p}</math> : Current density of hole.<math>(Acm^{-2})</math> |
+ | *<math>J_{p}</math> : Current density of hole.<math>(Acm^{-2})</math> |
| − | <math>R_{rad}</math> : Radiative recombination rate.<math>(cm^{-3}s^{-1})</math> |
+ | *<math>R_{rad}</math> : Radiative recombination rate.<math>(cm^{-3}s^{-1})</math> |
| − | <math>R_{non}</math> : Non-radiative recombination rate.<math>(cm^{-3}s^{-1})</math> |
+ | *<math>R_{non}</math> : Non-radiative recombination rate.<math>(cm^{-3}s^{-1})</math> |
| − | <math>R_{auger}</math> : Auger recombination rate.<math>(cm^{-3}s^{-1})</math> |
+ | *<math>R_{auger}</math> : Auger recombination rate.<math>(cm^{-3}s^{-1})</math> |
| − | <math>E_{b}</math> : Work with Schrodinger solver, shows the highest position of confined eigen state.<math>(eV)</math> |
+ | *<math>E_{b}</math> : Work with Schrodinger solver, shows the highest position of confined eigen state.<math>(eV)</math> |
| − | <math>E_{bh}</math> : work with Schrodinger solver, shows the lowest position of confined eigen state.<math>(eV)</math> |
+ | *<math>E_{bh}</math> : work with Schrodinger solver, shows the lowest position of confined eigen state.<math>(eV)</math> |
| − | <math>G_{gen}</math> : Generation.<math>(cm^{-3}s^{-1})</math> |
+ | *<math>G_{gen}</math> : Generation.<math>(cm^{-3}s^{-1})</math> |
| − | <math>{N_{d}}^+</math> : Activated donor dopant.<math>(cm^{-3})</math> |
+ | *<math>{N_{d}}^+</math> : Activated donor dopant.<math>(cm^{-3})</math> |
| − | <math>{N_{a}}^{-}</math> : Activated accept dopant.<math>(cm^{-3})</math> |
+ | *<math>{N_{a}}^{-}</math> : Activated accept dopant.<math>(cm^{-3})</math> |
| − | <math>R_{impact}</math> : Impact ionization rate.<math>(cm^{-3}s^{-1})</math> |
+ | *<math>R_{impact}</math> : Impact ionization rate.<math>(cm^{-3}s^{-1})</math> |
於 2017年8月16日 (三) 21:23 的修訂
Output file about band structure, carrier distribution and recombination.
Format
Parameter Explanation
- : Applied Voltage.
- : Energy of conduction band.
- : Energy of valance band.
- : Fermi lever of electron.
- : Fermi lever of electron.
- : Carrier density of electron.
- : Carrier density of hole.
- : Current density of electron.
- : Current density of hole.
- : Radiative recombination rate.
- : Non-radiative recombination rate.
- : Auger recombination rate.
- : Work with Schrodinger solver, shows the highest position of confined eigen state.
- : work with Schrodinger solver, shows the lowest position of confined eigen state.
- : Generation.
- : Activated donor dopant.
- : Activated accept dopant.
- : Impact ionization rate.
