$doping

出自 DDCC TCAD TOOL Manual
於 2024年9月24日 (二) 22:09 由 Yuming (對話 | 貢獻) 所做的修訂

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Setting of doping region for each layer.

Format

$doping
N
L Nd Ea

Parameter explaination

  • N : number of contiguous doping region (\AA)
  • Nd : doping concentration. N_A(+) or N_D(-) (eV^{-1/2})
  • Ea : Activation energy. (meV)

Example

$doping
3
500.0 1.00e+16 25.0
2000.0 1.00e+17 25.0
2500.0 1.00e+18 25.0 

This setting means region of 0-500A has 1e16 doping concertraion, 500-2000A has 1e17 doping concentraion, 2000-2500A has 1e18 doping concentraion. And their activation energy is 25meV.

The $doping setting for 1D-DDCC in GUI interface

1d $doping fig1.jpg