$DoEalloyfluc

Set Gaussian-like density of state. This model usually use for organic material or energy disorder material such as some leakage path for InGaN/GaN QB. It can also be used in amorphous Si, etc..

Format

• Type 11 is electron only
  
• Type 12 is for electron only but with 2 states

$DoEalloyfluc 
11 Nt Et σ

$DoEalloyfluc 
12 Nt1 Et1 σ2 Nt2 Et2 σ2

If the Gaussian peak level is above conduction band, then Et is positive. If the Gaussian peak value is below Ec, then the value is negative.
Et is defined as Et = Et - Ec

• Type 21 is hole only
  
• Type 22 is hole only but with 2 states
  

$DoEalloyfluc 
21 Nt Eth σ

$DoEalloyfluc 
22 Nt1 Eth1 σ1 Nt2 Eth2 σ2

If the Gaussian peak level is above valence band, then Et is positive. If the Gaussian peak value is below Ev, then the value is negative.
Eth is defined as Eth = Eth - Ev

• Type 31 is electron and hole with 2 gaussian shape. The first one is for electron and the second one is for hole.

$DoEalloyfluc 
31 Nt_e Et_e σ_e Nt_h Et_h σ_h

Where e means electron properties of DOS in this layer.

• Type 32 is electron and hole 4 gaussian 2 for electron 2 for hole

$DoEalloyfluc 
32 Nt_e1 Et_e1 σ_e1 Nt_e2 Et_e2 σ_e2 Nt_h1 Et_h1 σ_h1 Nt_h2 Et_h2 σ_h2

Where e1 means electron properties of DOS1 and h2 means hole properties of DOS2.

• Type 51 to 58 are designed for 1 to 8 states for both electron and hole, respectively.
  

51 means 1 states for both electron and hole
52 means 2 states for both electron and hole
53 means 3 states for both electron and hole
....
58 means 8 states for both electron and hole 

$DoEalloyfluc 
51 Nt_e1 Et_e1 σ_e1 Nt_h1 Et_h1 σ_h1 
52 Nt_e1 Et_e1 σ_e1 Nt_h1 Et_h1 σ_h1 Nt_e2 Et_e2 σ_e2 Nt_h2 Et_h2 σ_h2  
53 Nt_e1 Et_e1 σ_e1 Nt_h1 Et_h1 σ_h1 Nt_e2 Et_e2 σ_e2 Nt_h2 Et_h2 σ_h2  Nt_e3 Et_e3 σ_e3 Nt_h3 Et_h3 σ_h3 
54 Nt_e1 Et_e1 σ_e1 Nt_h1 Et_h1 σ_h1 Nt_e2 Et_e2 σ_e2 Nt_h2 Et_h2 σ_h2  Nt_e3 Et_e3 σ_e3 Nt_h3 Et_h3 σ_h3  Nt_e4 Et_e4 σ_e4 Nt_h4 Et_h4 σ_h4
......... 

Nt_e1 Et_e1 σ_e1 Nt_e2 Et_e2 σ_e2 Nt_h1 Et_h1 σ_h1 Nt_h2 Et_h2 σ_h2

Where e1 means electron properties of DOS1 and h2 means hole properties of DOS2.

Parameter Explanation

Nt : Carrier concerntration. $(cm^{-3})$

Et : Depth of dos central and Ec/Ev. $(eV)$

sigma : FWHM of the gaussian distribution. $(eV)$