*-cb.res

Output file about band structure, carrier distribution and recombination.

Format

$Position$　$E_c$　$E_v$　$E_{fn}$　$E_{fp}$　$n$　$p$　$J_n$　$J_p$　$R_{rad}$　$R_{non}$　$R_{auger}$　$E_b$　$E_{bh}$　$G_{gen}$　${N_d}^{+}$　${N_a}^{-}$　$R_{impact}$ $1/u_c$ $1/u_{hh}$ $1/u_{lh}$ $\overrightarrow{E}$ ${\mu }_n$ ${\mu }_p$ $u_c$ $u_{lh}$ $u_{hh}$ $N_{trap,effective}$ $R_{stim}$ $laye{r}_{n}um$

Parameter Explanation

• $Position$ : Applied Voltage. $(cm)$

• $E_c$ : Energy of conduction band. $(eV)$

• $E_v$ : Energy of valance band. $(eV)$

• $E_{fn}$ : Fermi lever of electron. $(eV)$

• $E_{fp}$ : Fermi lever of electron. $(eV)$

• $n$ : Carrier density of electron. $(c{m}^{-3})$

• $p$ : Carrier density of hole. $(c{m}^{-3})$

• $J_n$ : Current density of electron.$(Ac{m}^{-2})$

• $J_p$ : Current density of hole.$(Ac{m}^{-2})$

• $R_{rad}$ : Radiative recombination rate.$(c{m}^{-3}{s}^{-1})$

• $R_{non}$ : Non-radiative recombination rate.$(c{m}^{-3}{s}^{-1})$

• $R_{auger}$ : Auger recombination rate.$(c{m}^{-3}{s}^{-1})$

• $E_b$ : Work with Schrodinger solver, shows the highest position of confined eigen state.$(eV)$

• $E_{bh}$ : work with Schrodinger solver, shows the lowest position of confined eigen state.$(eV)$

• $G_{gen}$ : Generation.$(c{m}^{-3}{s}^{-1})$

• ${N_d}^{+}$ : Activated donor dopant.$(c{m}^{-3})$

• ${N_a}^{-}$ : Activated accept dopant.$(c{m}^{-3})$

• $R_{impact}$ : Impact ionization rate.$(c{m}^{-3}{s}^{-1})$

$1/u_c$  : effective electron quantum potential
$1/u_{hh}$ : effective heavy hole quantum potential
$1/u_{lh}$ : effective light hole quantum potential
$\overrightarrow{E}$  : electrical field
${\mu }_n$ : electron mobility
${\mu }_p$ : hole mobility
$u_c$ : u of electron solved by localized landscape theory
$u_{lh}$ : u of heavy hole solved by localized landscape theory
$u_{hh}$ : u of light hole solved by localized landscape theory
$N_{trap,effective}$: net trapped charges
$R_{stim}$ :Stimulate emission rate $1/c{m}^3/s$
$laye{r}_{n}um$: layer number