SCI papers

  1. Jun-Yu Huang, You-Wei Yang, Wei-Hsuan Hsu, En-Wen Chang, Mei-Hsin Chen, and Yuh-Renn Wu*, “Influences of dielectric constant and scan rate on hysteresis effect in perovskite solar cell with simulation and experimental analyses”, Scientific report, 12, 7927, 2022. DOI: 10.1038/s41598-022-11899-x
  2. K. S. Qwah*, M. Monavarian, W. Y. Ho, Y.-R. Wu, J. S. Speck, “Vertical hole transport through unipolar InGaN quantum wells and double heterostructures”, Physical Review Material, 6, 044602, April, 2022. DOI: 10.1103/PhysRevMaterials.6.044602
  3. Hsiu-Chi Pai and Yuh-Renn Wu*, “Investigating the high field transport properties of Janus WSSe and MoSSe by DFT analysis and Monte Carlo simulations”, J. Appl. Phys. 131, 144303 (2022); https://doi.org/10.1063/5.0088593. Editor’s Pick.
  4. Ray-Hua Horng, Chun-Xin Ye, Po-Wei Chen, Daisuke Iida, Kazuhiro Ohkawa, Yuh-Renn Wu, and Dong-Sing Wuu, “Study on the effect of size on InGaN red micro-LEDs”, Scientific Reports, 12, 1324, (2022) DOI: 10.1038/s41598-022-05370-0
  5. Cheng-Han Ho, James S. Speck, Claude Weisbuch, and Yuh-Renn Wu*, “Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shape defects and Random Alloy Fluctuation in Quantum Wells”, Physical review applied, 17, 014033, 2022,    DOI:10.1103/PhysRevApplied.17.014033 
  6. Chung-Chi Chen, Ting-Chun Huang, Yu-Wei Lin, Yu-Ren Lin, Ping-Hsiu Wu, Ping-Wei Liou, Hao-Yu Hsieh, Yang-Yi Huang, Shaobo Yang, Yuh-renn Wu, and C. C. Yang*, “Hole mobility behavior in Al-gradient polarization-induced p-type AlGaN grown on GaN template,” Appl. Phys. Lett. 120, 022103, 2022. DOI: 10.1063/5.0070599
  7. Pin-Fang Chen, Edward Chen and Yuh-Renn Wu*, “Design of  Monolayer MoS2 nanosheet transistors for low-power applications”IEEE Transaction on Electron Device, 69, No.1, pp358-363, 2022. DOI:10.1109/TED.2021.3130840 published Oct. 2021
  8. Chen-Ming Chuang, Yun-Hsiu Cheng, and Yuh-Renn Wu*, “Electro-Optical Numerical Modeling for the Design of UVA Nitride-Based Vertical-Cavity Surface-Emitting Laser Diodes”, IEEE Journal of Selected Topics in Quantum Electronics, 28, 1, 1700606, pp.1-6, Jan-Feb., 2022, DOI: 10.1109/JSTQE.2021.3114411 , published September 2021
  9. Huan-Ting Shen, Yu-Chieh Chang, and Yuh-Renn Wu*, “Analysis of light emissions polarization ratio in deep ultra-violet light emitting diodes by considering random alloy  fluctuations with the 3D k.p method” , physica status solidi rapid, 2100498, 2021. DOI:10.1002/pssr.202100498
  10. Yue Zhao, Tsung-Yin Tsai, Gang Wu, Cormac Ó Coileáin, Yan-Feng Zhao, Duan Zhang, Kuan-Ming Hung, Ching-Ray Chang, Yuh-Renn Wu, and Han-Chun Wu ,“Graphene/SnS2 Van der Waals photodetector with high photoresponsivity and high photodetectivity for broadband 365 – 2240 nm detection”, ACS Applied Materials & Interfaces, 13, 39, 47198–47207, Sept. 2021. DOI: 10.1021/acsami.1c11534
  11. Huan-Ting Shen, Claude Weisbuch, James S. Speck, and Yuh-Renn Wu*, “Three-dimensional modeling of minority-carrier lateral diffusion length including random alloy fluctuations in (In,Ga)N and (Al,Ga)N single quantum wells”, Physical Review Applied, 16, 2, 024054, Sep. 2021. DOI: 10.1103/PhysRevApplied.16.024054
  12. Ji-Xuan Yang; Dai-Jie Lin; Yuh-Renn Wu; Jian-Jang Huang*, “Deep Source Metal Trenches in GaN-on-Si HEMTs for Relieving Current Collapse,” in IEEE Journal of the Electron Devices Society, 9, pp 557 – 563, 10 May 2021. DOI: 10.1109/JEDS.2021.3078522
  13. Kai Shek Qwah*, Christian A. Robertson, Yuh-Renn Wu and James Speck, “Modeling dislocation-related reverse bias leakage in GaN p-n diodes”, Semiconductor Science and Technology, 36, 075001 DOI: 10.1088/1361-6641/abfdfc
  14. Shreekant Sinha, Fu-Gow Tarntair, Cheng-Han Ho, Yuh-Renn Wu, and Ray-Hua Horng*,
    “Investigation of Electrical and Optical Properties of AlGaInP Red Vertical Micro-Light-Emitting Diodes With Cu/Invar/Cu Metal Substrates”, IEEE Transactions on Electron Devices, IEEE Transactions on Electron Devices, vol. 68, no. 6, pp. 2818-2822, June (2021) . DOI:10.1109/TED.2021.3073879
  15. Wenjie Yan, Huei-Ru Fuh, Yanhui Lv, Ke-Qiu Chen, Tsung-Yin Tsai, Yuh-Renn Wu, Tung-Ho Shieh, Kuan-Ming Hung*, Juncheng Li, Duan Zhang, Cormac Ó Coileáin, Sunil K Arora, Zhi Wang, Zhaotan Jiang, Ching-Ray Chang, Han-Chun Wu*, “Giant gauge factor of Van der Waals material based strain sensors”, Nature communications, 12, 1, p2018, April, 2021. DOI: 10.1038/s41467-021-22316-8
  16. Wan Yu Wu, Yu Hsuan Hsu, Yi Fan Chen, Yuh Renn Wu, Han Wen Liu, Tse Yi Tu, Paul P.C. Chao, Chih Shan Tan, Ray-Hua Horng*, “Wearable Devices Made of a Wireless Vertical-Type Light-Emitting Diode Package on a Flexible Polyimide Substrate with a Conductive Layer”, ACS Applied Electronic Materials, 3, 2, p979, Feb, (2021) https://doi.org/10.1021/acsaelm.0c01072
  17. Tsung-Yin Tsai, Pin-Fang Chen, Shu-Wei Chang, Yuh-Renn Wu*, “Studies of 2D Bulk and Nanoribbon Band Structures in MoxW1–xS2 Alloy System Using Full sp3d5 Tight‐Binding Model”, physica status solidi (b), 2000375, 2, (2021)  (on line 2020/09). DOI:10.1002/pssb.202000375
  18. Tien-Yu Wang, Wei-Chih Lai*, Syuan-Yu Sie, Sheng-Po Chang, Yuh-Renn Wu, Yu-Zung Chiou, Cheng-Huang Kuo, Jinn-Kong Sheu, “AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier”, Applied Physics Letters, 117, p251101, Dec (2020) DOI: 10.1063/5.0026911
  19. Jun-Yu Huang, Jiun-Haw Lee, and Yuh-Renn Wu*, Tse-Ying Chen and Yu-Cheng Chiu,Jau-Jiun Huang and Man-kit Leung, Tien-Lung Chiu,”Revealing the mechanism of carrier transport in host-guest systems of organic materials with a modified Poisson and drift-diffusion solver”, Phys. Rev. Materials 4, 125602, Dec. 2020. DOI: 10.1103/PhysRevMaterials.4.125602
  20. Guillaume Lheureux*, Cheyenne Lynsky, Yuh-Renn Wu, James S. Speck, and Claude Weisbuch, “A 3D simulation comparison of carrier transport in green and blue c-plane multiquantum well nitride light emitting diodes”, J. Appl. Phys. 128, 235703 (2020); DOI:10.1063/1.5143276
  21. Claude Weisbuch*, Shuji Nakamura, Yuh-Renn Wu, and James S. Speck “Disorder effects in nitride semiconductors: impact on fundamental and device properties”, Nanophotonics, 10, p3–21, 2021  (Review article), DOI: 10.1515/nanoph-2020-0590
  22. Jiun-Haw Lee, Chia-Hsun Chen, Bo-Yen Lin, Yi-Hsin Lan, Yi-Mei Huang, Nai-Jing Chen, Jau-Jiun Huang, Dmytro Volyniuk, Rasa Keruckiene, Juozas Vidas Grazulevicius, Yuh-Renn Wu, Man-kit Leung,* and Tien-Lung Chiu*, “Bistriazoles with a Biphenyl Core Derivative as an Electron-Favorable Bipolar Host of Efficient Blue Phosphorescent Organic Light-Emitting Diodes“, ACS Applied Materials & Interfaces, 12, 44, 49895–49904 , DOI: 10.1021/acsami.0c13705 
  23. Hiroshi Amano, Ramón Collazo, Carlo De Santi, Sven Einfeldt, Mitsuru Funato, Johannes Glaab, Sylvia Hagedorn, Akira Hirano, Hideki Hirayama, Ryota Ishii, Yukio Kashima, Yoichi Kawakami, Ronny Kirste, Michael Kneissl, Robert Martin*, Frank Mehnke, Matteo Meneghini, Abdallah Ougazzaden, Peter J Parbrook, Siddharth Rajan, Pramod Reddy, Friedhard Römer, Jan Ruschel, Biplab Sarkar, Ferdinand Scholz, Leo J Schowalter, Philip Shields, Zlatko Sitar, Luca Sulmoni, Tao Wang, Tim Wernicke, Markus Weyers, Bernd Witzigmann, Yuh-Renn Wu, Thomas Wunderer, Yuewei Zhang, “The 2020 UV emitter roadmap”, Journal of Physics D: Applied Physics, 53, 50, 503001, Sep. 2020. DOI: 10.1088/1361-6463/aba64c
  24. Ray-Hua Horng*, Shreekant Sinha, Yuh-Renn Wu, Fu-Guo Tarntair, Jung Han & Dong-Sing Wuu, “Characterization of semi-polar (20-21) InGaN microLEDs.”, Scientific Reports, 10, 15966, Sep. 2020. DOI:10.1038/s41598-020-72720-1
  25. Ching-Wen Chang, Paritosh V Wadekar, Hui-Chun Huang, Quark Yung-Sung Chen, Yuh-Renn Wu, Ray T Chen, Li-Wei Tu*, “Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells”, Nanoscale research letters, 15, p1-p12, online Aug. 2020, DOI: 10.1186/s11671-020-03392-z  
  26. Yi Chao Chow*, Changmin Lee, Matthew Wong, Yuh-Renn Wu, Shuji Nakamura, Steven P. DenBaars, John Bowers, James S. Speck, “Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors”, Optics Express, 28, 16, pp. 23796-23805, Aug. 2020. DOI: 10.1364/OE.399924
  27. Kai Shek Qwah*, Morteza Monavarian*, Guillaume Lheureux, Jianfeng Wang, Yuh-Renn Wu, and James S. Speck, “Theoretical and experimental investigation of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder”, Applied Physics Letter, 117, 022107, July 2020. DOI: 10.1063/5.0006291
  28. Chun-Lin Yu, Chih-Hao Lin, and Yuh-Renn Wu*, “Analysis and optimization of GaN based Multi-channels FinFETs”, IEEE Transactions on nanotechnology, 19, pp439-445, June, 2020. DOI 10.1109/TNANO.2020.2998840.
  29. Chia-Yen Huang*, Walde Sebastian, Chia-Lung Tsai, Carsten Netzel, Hsueh-Hsing Liu, Sylvia Hagedorn, Yuh-Renn Wu, Yi-Keng Fu, and Markus Weyers, “Overcoming the excessive compressive strain in AlGaN epitaxy by introducing a high Si-doping in AlN templates” Jpn. J. Appl. Phys., 59, 070904, May, 2020. DOI: 10.35848/1347-4065/ab990a
  30. Jun-Yu Huang, Mei-Tan Wang, Guan-Yu Chen, Jung-Yu Li, Shih-Pu Chen, Jiun-Haw Lee, Tien-Lung Chiu, and Yuh-Renn Wu*, “Analysis of the Triplet Exciton Energy Transfer Mechanism at Heterojunction of Organic Light-Emitting Diode”, Journal of physics D, Applied Physics, 53, 345501, 2020. DOE:10.1088/1361-6463/ab8a94
  31. Cheyenne Lynsky*, Abdullah I. Alhassan, Guillaume Lheureux, Bastien Bonef, Steven P. DenBaars, Shuji Nakamura, Yuh-Renn Wu, Claude Weisbuch, and James S. Speck, “Barriers to carrier transport in multiple quantum well nitride-based c-plane green light emitting diodes” Phys. Rev. Materials 4, 054604, May, 2020, DOI:10.1103/PhysRevMaterials.4.054604
  32. Saulius Marcinkevičius*, Rinat Yapparov, Leah Y. Kuritzky, Yuh-Renn Wu, Shuji Nakamura, and James S. Speck, “Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport”, Phys. Rev. B 101, 075305, (Feb), 2020. DOI: 10.1103/PhysRevB.101.075305
  33. Piotr Martyniuk*, Krystian Michalczewski, Tsung-Yin Tsai, Chao-Hsin Wu, and Yuh-Renn Wu, “A Thermoelectrically Cooled nBn Type‐II Superlattices InAs/InAsSb/B‐AlAsSb Mid‐Wave Infrared Detector”, Phys. Status Solidi A, 217: 1900522, 2020. DOI: 10.1002/pssa.201900522
  34. Tsung-Yin Tsai, Krystian Michalczewski, Piotr Martyniuk, Chao-Hsin Wu, and Yuh-Renn Wu*, “Application of localization landscape theory and the k · p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system”, Journal of Applied Physics 127, 033104 (2020); DOI: 10.1063/1.5131470
  35. Christian Andrew Robertson*,       Kai Shek Qwah, Yuh-Renn Wu, James S. Speck, “Modeling Dislocation-Related Leakage Currents in GaN p-n Diodes”, Journal of Applied Physics 126, 245705 (2019) DOI: 10.1063/1.5123394
  36. Chih-Chieh Chen*, Shiue-Yuan Shiau, Ming-Feng Wu, and Yuh-Renn Wu*, “Hybrid classical-quantum linear solver using Noisy Intermediate Scale Quantum machines”, Scientific Reports, Vol 9, p16251, 2019. DOI:10.1038/s41598-019-52275-6
  37. Jun-Yu Huang, En-Wen Chang, and Yuh-Renn Wu*, “Optimization of MAPbI3-Based Perovskite Solar Cell With Textured Surface”, IEEE Journal of Photovoltaics, 9, No.6, pp1686 – 1692, Nov. 2019. DOI: 10.1109/JPHOTOV.2019.2941170
  38. Krystian Michalczewski, Piotr Martyniuk, Łukasz Kubiszyn, Chao-Hsin Wu, Yuh-Renn Wu, Jarek Jureńczyk, Antoni Rogalski, Jozef Piótrowski, “Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling”, IEEE Electron Device Letters, 40, No. 9, 1396 – 1398, Sept. (2019), DOI: 10.1109/LED.2019.2930106
  39. Saulius Marcinkevičius*, Rinat Yapparov, Leah Y Kuritzky, Yuh-Renn Wu, Shuji Nakamura, Steven P DenBaars, James S Speck, “Interwell carrier transport in InGaN/(In) GaN multiple quantum wells”, Applied Physics Letters, 114 (15), 151103, 2019. April. DOI: 10.1063/1.5092585
  40. Li-Cheng Chang, Jhih-Hao Lin, Cheng-Jia Dai, Ming Yang, Yi-Hong Jiang, Yuh-Renn Wu, and Chao-Hsin Wu*, ”Systematic investigation of the thresholdvoltage modulation of AlGaN/GaN Schottky-gate Fin-HEMTs”, J. Appl. Phys. 125, 094502, March (2019); DOI:10.1063/1.5085275
  41. Hung-Hsiang Chen, James S Speck, Claude Weisbuch, Yuh-Renn Wu*, “Three dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuations”, Applied Physics Letters, 113, 153504, 2018, DOI: 10.1063/1.5051081
  42. W. Hahn, J-M Lentali, P Polovodov, N Young, S Nakamura, JS Speck, C Weisbuch, M Filoche, Y-R Wu, M Piccardo, F Maroun, L Martinelli, Y Lassailly, J Peretti*, “Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy, Physical Review B 98 (4), 045305, 2018, DOI: 10.1103/PhysRevB.98.045305.
  43. Chia-Yen Huang*, Tzu-Ying Tai, Jing-Jie Lin, Tsu-Chi Chang, Che-Yu Liu, Tien-Chang Lu, Yuh-Renn Wu, Hao-Chung Kuo, “Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing”, ACS Photonics, 5, pp 2724–2729, 2018. DOI: 10.1021/acsphotonics.8b00471.
  44. Han‐Wei Hsiao and Yuh‐Renn Wu*, “3D Self‐Consistent Quantum Transport Simulation for GaAs Gate‐All‐Around Nanowire Field‐Effect Transistor with Elastic and Inelastic Scattering Effects”, physica status solidi (a), 1800524, 2018. DOI: 10.1002/pssa.201800524
  45. Wen-Yen Chang, Yang Kuo, Yu-Feng Yao, CC Yang, Yuh-Renn Wu, and Yean-Woei Kiang*, “Different surface plasmon coupling behaviors of a surface Al nanoparticle between TE and TM polarizations in a deep-UV light-emitting diode” Optics Express 26 (7), 8340-8355, 2018. DOI:10.1364/OE.26.008340
  46. Chia-Ying Su, Meng-Che Tsai, Keng-Ping Chou, Hsin-Chun Chiang, Huang-Hui Lin, Ming-Yen Su, Yuh-Renn Wu, Yean-Woei Kiang, CC Yang*,” Method for enhancing the favored transverse-electric-polarized emission of an AlGaN deep-ultraviolet quantum well” Optics express 25 (22), 26365-26377, 2017. DOI :10.1364/OE.25.02636
  47. Te-Jen Kung, Jun-Yu Huang, Jau-Jiun Huang, Snow H. Tseng, Man-Kit Leung, Tien-Lung Chiu, Jiun-Haw Lee, and Yuh-Renn Wu*, “Modeling of carrier transport in organic light emitting diode with random dopant effects by two-dimensional simulation”, Optics Express, 25, (21), pp. 25492-25503, 2017, DOI: 10.1364/OE.25.025492
  48. Shuo-Fan Chen and  Yuh-Renn Wu*, “A design of intermediate band solar cell for photon ratchet with multi-layer MoS2 nanoribbons“ Appl. Phys. Lett. 110, 201109 (2017) DOI: 10.1063/1.4983721
  49. C. Y. Su; C. G. Tu; W. H. Liu; C. H. Lin; Y. F. Yao; H. T. Chen; Y. R. Wu; Y. W. Kiang; C. C. Yang*, “Enhancing the Hole-Injection Efficiency of a Light-Emitting Diode by Increasing Mg Doping in the p-AlGaN Electron-Blocking Layer,” in IEEE Transactions on Electron Devices , 64 (8), 3226-3233. 2017 DOI: 10.1109/TED.2017.2711023
  50. Chi-Kang Li, Marco Piccardo, Li-Shuo Lu, Svitlana Mayboroda, Lucio Martinelli, Claude Weisbuch, Marcel Filoche, Yuh-Renn Wu “Localization landscape theory of disorder in semiconductors III: Application to transport and radiative recombination in light emitting diodes.”, Phys. Rev. B, 95, 144206 , April, 2017. DOI: 10.1103/PhysRevB.95.144206
  51. Marco Piccardo, Chi-Kang Li, Yuh-Renn Wu, James S. Speck, Bastien Bonef, Bob Farrell, Marcel Filoche, Lucio Martinelli, Jacques Peretti, and Claude Weisbuch, “Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layers”, Phys. Rev. B, 95, 144205, April, 2017. DOI: 10.1103/PhysRevB.95.144205
  52. Marcel Filoche, Marco Piccardo, Yuh-Renn Wu, Chi-Kang Li, Claude Weisbuch, and Svitlana Mayboroda, “ Localization landscape theory of disorder in semiconductors I: Theory and modeling”, Phys. Rev. B, 95, 144204, April, 2017. DOI: 10.1103/PhysRevB.95.144204
  53. Jau-Jiun Huang, Lik-Ka Yun,Te-Jen Kung,Chi-Lin Chen, Jiun-Haw Lee, Yuh-Renn Wu,Tien-Lung Chiu, Pi-Tai Chouand  Man-kit Leung*, “Networking hole and electron hopping paths by Y-shaped host molecules: promoting blue phosphorescent organic light emitting diodes’’, J. Mater. Chem. C, 5, 3600-3608, 2017. DOI: 10.1039/C6TC05538A
  54. Heng Li, Hui-Yu Cheng, Wei-Liang Chen, Yi-Hsin Huang, Chi-Kang Li, Chiao-Yun Chang, Yuh-Renn Wu, Tien-Chang Lu*, and Yu-Ming Chang*, “Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy”, Scientific Reports 7,  45519 (2017)  DOI:10.1038/srep45519.
  55. Shin-Yi Ho, Chun-Hsun Lee, An-Jye Tzou, Hao-Chung Kuo, Yuh-Renn Wu, and JianJang Huang, “Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure,” in IEEE Transactions on Electron Devices, vol. 64, no. 4, pp. 1505-1510, April 2017. DOI: 10.1109/TED.2017.2657683
  56. Chih-Hsien Cheng, Tzu-Wei Huang, Chung-Lun Wu, Mu Ku Chen, Cheng Hung Chu, Yuh-Renn Wu, Min-Hsiung Shih, Chao-Kuei Lee, Hao-Chung Kuo, Din-Ping Tsai, and Gong-Ru Lin*, “Transferring the Bendable Substrateless GaN LED Grown on Thin C-rich SiC Buffer Layer to Flexible Dielectric and Metallic Plates”, J. Mater. Chem.C, 5, 607-617, (2017). DOI: 10.1039/C6TC04318F
  57. Shuo-Fan Chen, Yuh-Renn Wu*, “Electronic Properties of MoS2 Nanoribbon under Strain Using Tight Binding Method”, Physica Status Solidi B: Basic Solid State Physics, 1600565 (2017). DOI 10.1002/pssb.201600565
  58. David Browne*, Micha Fireman, Baishakhi Mazumder, Leah Kuritzky, Yuh-Renn Wu, and James Speck, “Vertical Transport through AlGaN Barriers in Heterostructures Grown by Ammonia Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition”, Semicond. Sci. Technol., 32, p025010, (2017). DOI:10.1088/1361-6641/32/2/025010
  59. H. T. Chen; C. Y. Su; C. G. Tu; Y. F. Yao; C. H. Lin; Y. R. Wu; Y. W. Kiang; C. C. Yang*, “Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-type Conductivity in a p-GaN/u-GaN Alternating-layer Nanostructure”, IEEE Transactions on Electron Devices, 64 (1), 115-120, 2017. DOI: 10.1109/TED.2016.2631148
  60. Kuan-Ying Ho, Chi-Kang Li, Hong-Jhang Syu, Yi Lai, Ching-Fuh Lin and Yuh-Renn Wu*, “Analysis of the PEDOT:PSS/Si nanowire hybrid solar cell with a tail state model”, J. Appl. Phys., 120, 215501, (2016). DOI:10.1063/1.4970827
  61. Chao-Wei Wu and Yuh-Renn Wu*,“Optimization of thermoelectric properties for rough nano-ridge GaAs/AlAs superlattice structure”, AIP Advances 6, 115201, 2016. DOI: 10.1063/1.4967202
  62. Chi-Kang Li, Chen-Kuo Wu, Chung-Cheng Hsu, Li-Shuo Lu, Heng Li, Tien-Chang Lu, and Yuh-Renn Wu*, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits”, AIP Advance, 6, 055208, 2016. DOI: 10.1063/1.4950771
  63. Xinhui Chen, Kuan-Ying Ho, and Yuh-Renn Wu*, “Modeling and Optimization of p-AlGaN super lattice structure as the p-contact and transparent layer”, Opt. Express 23, 32367-32376 (2015). DOI:10.1364/OE.23.032367
  64. David A. Browne, Baishakhi Mazumder, Yuh-Renn Wu, and James S. Speck “Electron Transport in Unipolar InGaN/GaN Multiple Quantum Well Structures Grown by NH3 Molecular Beam Epitaxy”, J. Appl. Phys., 117, 185703, 2015. SCI papers. DOI: 10.1063/1.4919750
  65. Chih-Chien Pan*, Qimin Yan, Houqiang Fu, Yuji Zhao, Yuh-Renn Wu, Chris Van de Walle, Shuji Nakamura, Steven P. DenBaars, “High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier” Electronics Letters, vol. 51, no. 15, pp. 1187-1189, 2015. SCI papers. DOI: 10.1049/el.2015.1647.
  66. Chen-Kuo Wu, Chi-Kang Li, and Yuh-Renn Wu*, “Percolation transport study in nitride based LEDby considering the random alloy fluctuation”, Journal of Computational Electronics, 9 pages, 14, pp416-424, 2015. , SCI papers.  DOI 10.1007/s10825-015-0688-y .
  67. Finella Lee, Liang-Yu Su, Chih-Hao Wang, Yuh-Renn Wu, and Jianjang Huang*, “Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors” IEEE Electron Device Letters, 36, pp232-234, 2015. (March), SCI papers.  DOI: 10.1109/LED.2015.2395454
  68. H.H.Wang, J. S. Tian, C. Y. Chen, H. H. Huang, Y. C. Yeh, P. Y. Deng, L. Chang ; Y. H. Chu, Y. R. Wu, J. H. He*, “The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO,” in IEEE Photonics Journal, vol. 7, no. 2, pp. 1-8, April 2015. DOI: 10.1109/JPHOT.2015.2415672
  69. Tsung-Jui Yang, Ravi Shivaraman, James S. Speck, and Yuh-Renn Wu*, “The Influence of Random Indium Alloy fluctuations in Indium Gallium Nitride Quantum Wells on the Device Behavior”,  J. Appl. Phys, 116, 113104, 2014. DOI: 10.1063/1.4896103
  70. Chao-Wei Wu and Yuh-Renn Wu*, “Thermoelectric characteristic of the rough InN/GaN core-shell nanowires”, J. Appl. Phys. 16, 103707 , 2014  DOI:10.1063/1.4894510
  71. Hui-Hsin Hsiao, Hung-Chun Chang, and Yuh-Renn Wu*, “Design of Anti-ring Back Reflectors for Thin-Film Solar Cells Based on Three-Dimensional Optical and Electrical Modeling”, Appl. Phys. Lett., 105, 061108 2014. Doi:10.1063/1.4893025
  72. W. C. Lai*, M. H. Ma, B. K. Lin, B. H. Hsieh, Y. R. Wu, and J. K. Sheu, “Photoelectrochemical hydrogen generation with linear gradient Al composition dodecagon faceted AlGaN/n-GaN electrode” Optics Express, 22, S7, pp. A1853-A1861, 2014. DOI: 10.1364/OE.22.0A1853  
  73. K. Y. Lai, G. J. Lin, Yuh-Renn Wu, Meng-Lun Tsai, and Jr-Hau He*, “Efficiency dip observed with InGaN-based multiple quantum well solar cells” Optics Express, 22, S7, pp. A1753-A1760, 2014. DOI: 10.1364/OE.22.0A1753
  74. Hsiang-Wei Li, Yu-Feng Yin, Chen-Yu Chang, Chen-Hung Tsai, Yen-Hsiang Hsu, Da-Wei Lin, Yuh-Renn Wu, Hao-Chung Kuo, and Jian Jang Huang, “Mechanisms of the Asymmetric Light Output Enhancements in a-Plane GaN Light-Emitting Diodes With Photonic Crystals”, IEEE Journal of Quantum Electronics, 50,12, pp951-956, 2014. DOI 10.1109/JQE.2014.2362552
  75. Yuji Zhao, Robert M. Farrell, Yuh-Renn Wu, and James S. Speck*, “Valence band states and polarized optical emission from nonpolar and semipolar III-nitride quantum well optoelectronic devices”, Jpn. J. Appl. Phys. –Selected Topics in Applied Physics , invited review paper, 53, 100206 (2014), 2014 DOI:10.7567/JJAP.53.100206
  76. Yen Chou, Hsiang-Wei Li, Yu-Feng Yin, Yu-Ting Wang, Yen-Chen Lin, Da-Wei Lin, Yuh-Renn Wu, Hao-Chung Kuo, and Jian Jang Huang, “Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals” J. Appl. Phys., 115, 193107, 2014. DOI 10.1063/1.4876655
  77. Erin C. H. Kyle, Stephen W. Kaun, Peter G. Burke, Feng Wu, Yuh-Renn Wu, and James S. Speck, “High-electron-mobility GaN grown on free standing GaN templates by ammonia-based molecular beam epitaxy” J. Appl. Phys., 115, 193702, 2014. DOI:10.1063/1.4874735
  78. Chun-Yao Lee, Chun-Ming Yeh, Yung-Tsung Liu, Chia-Ming Fan, Chien-Fu Huang, and Yuh-Renn Wu*, “The optimization study of textured a-Si:H solar cells”, J. Renewable and Sustainable Energy 6, 023111 2014. DOI: 10.1063/1.4870993
  79. Chi-Kang Li, Maarten Rosmeulen, Eddy Simoen, and Yuh-Renn Wu*, “Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDs”, IEEE Trans Electron Dev., 61, pp511-517, 2014. DOI: 10.1109/TED.2013.2294534
  80. Yuji Zhao, Feng Wu, Tsung-Jui Yang, Yuh-Renn Wu, Shuji Nakamura, and James S. Speck, “Atomic-scale nanofacet structure in semipolar (20-2-1) and (20-21) InGaN single quantum wells”, Appl. Phys. Express, 7, p025503. 2014. DOI: 10.7567/APEX.7.025503
  81. Jheng-Han Lee, Zong-Ming Wu, Yu-Min Liao, Yuh-Renn Wu, Shih-Yen Lin, and Si-Chen Lee*, “The Operation Principle of the Well in Quantum Dot stack Infrared Photodetector” , J. Appl. Phys., 14, 244504, 2013. DOI 10.1063/1.4849875
  82. Chi-Kang Li, Po-Chun Yeh, Jeng-Wei Yu, Lung-Han Peng, and Yuh-Renn Wu*, “Scaling Performance of Ga2O3/GaN Nanowire Field Effect Transistor”, Journal of Applied Physics, 114, 163706, 2013. DOI: 10.1063/1.4827190
  83. J. Pal, M. A. Migliorato, C.-K. Li, Y.-R. Wu, B. G. Crutchley, I. P. Marko, and S. J. Sweeney, “Enhancement of Efficiency of InGaN-based LEDs through Strain and Piezoelectric Field Management” Journal of Applied Physics, 114, 073104, 2013. DOI: 10.1063/1.4818794
  84. Kai-Lun Chi, Shu-Ting Yeh, Yu-Hsiang Yeh, Kun-Yan Lin, Jin-Wei Shi*, Yuh-Renn Wu*, M. L. Lee, and J.-K. Sheu, “GaN-Based Dual Color Light-Emitting-Diodes with P-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities”, IEEE Trans Electron Dev., 60, pp2821-2826, 2013. DOI: 10.1109/TED.2013.2272803
  85. D. N. Nath, Z. C. Yang, C.-Y. Lee, P.S. Park, Y.-R Wu, and S. Rajan, “Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures”Applied Physics Letter, 103, 022102, 2013. DOI:  10.1063/1.4813309
  86. Yoshinobu Kawaguchi, Chia-Yen Huang, Yuh-Renn Wu, Yuji Zhao, Steven P. DenBaars, and Shuji Nakamura, “Semipolar (20-21) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage “, Jpn. J. Appl. Phys,  52, p08JC08, 2013.  DOI: 10.7567/JJAP.52.08JC08
  87. Yang Kuo, Wen-Yen Chang, Horng-Shyang Chen, Yuh-Renn Wu, C. C. Yang, and Yean-Woei Kiang*, “Surface-plasmon-coupled emission enhancement of a quantum well with a metal nanoparticle embedded in a light-emitting diode,” J. Opt. Soc. Am. B, 30, 10, 2599-2606, Oct. 2013. DOI: 10.1364/JOSAB.30.002599
  88. Chin-Yi Chen and Yuh-Renn Wu*, “Scaling Issues in Trigate GaN Nanowire Transistors”, J. Appl. Phys., 113, p214501, 2013. DOI: 10.1063/1.4808241
  89. Chi-Kang Li, Hung-Chih Yang, Ta-Cheng Hsu, Yu-Jiun Shen, Ai-Sen Liu, and Yuh-Renn Wu*, “Three Dimensional Numerical Study on the Effciency of a Core-shell InGaN/GaN Multiple Quantum Well Nanowire LED”, J. Appl. Phys., 113, 183104, 2013. DOI 10.1063/1.4804415
  90. Hsun-Wen Wang, Pei-Chen Yu*, Yuh-Renn Wu*, Hao-Chung Kuo, and Shiuan-Huei Lin,“Projected efficiency of polarization matched p-InxGa1-xN/i-InyGa1-yN/n-GaN double heterojunction solar cells”, IEEE Journal of photovoltaic, 3, pp985-990, 2013, DOI 10.1109/JPHOTOV.2013.2252953
  91. Liang-Yi Chen, Chi-Kang Li, Jin-Yi Tan, Li-Chuan Huang, Yuh-Renn Wu and JianJang Huang*, “On the Efficiency Decrease of the GaN Light-Emitting Nanorod Arrays”, IEEE Journal of Quantum Electronics, 49, 2, pp224-231, 2013. DOI: 10.1109/JQE.2013.2237885.
  92. Pradeep Senanayake*, Chung-Hong Hung, Alan Farrell, David A. Ramirez,  Joshua Shapiro, Chi-Kang Li, Yuh-Renn Wu, Majeed M. Hayat, and Diana L. Huffaker, “Thin 3D Multiplication Regions in Plasmonically Enhanced Nanopillar Avalanche Detectors”, Nano letters, 12 (12), pp 6448–6452, 2012. DOI:10.1021/nl303837y
  93. Jordan Reed Lang, Nathan G. Young, Robert M. Farrell, Yuh-Renn Wu, and James S. Speck, “Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells”, Applied Physics Letter, 101, p181105, 2012. DOI: 10.1063/1.4765068
  94. Jeng-Wei Yu, Po-Chun Yeh, Sung-Li Wang, Yuh-Renn Wu, Ming-Hua Mao, Hao-Hsiung Lin, and Lung-Han Peng*, “Short channel effects on gallium nitride/gallium oxide nanowire transistors” Applied Physics Letter, 101, p183501, 2012. DOI:10.1063/1.4764554
  95. Ting-Gang Chen, Peichen Yu*, Shih-Wei Chen, Feng-Yu Chang, Bo-Yu Huang, Yu-Chih Cheng1, Jui-Chung Hsiao2, Chi-Kang Li and Yuh-Renn Wu, “Characteristics of large-scale nanohole arrays for thin-silicon photovoltaics”,  Prog. Photovolt: Res., Published on line,  (2012)  DOI: 10.1002/pip.2291
  96. Ingrid L. Koslow*, Matthew T. Hardy, Po Shan Hsu, Po-Yuan Dang, Feng Wu, Alexey Romanov,  Yuh-Renn Wu, Erin C. Young, Shuji Nakamura, James S. Speck, and Steven P. DenBaars, “(11-22) Long Wavelength Light Emitting Diodes Grown on Stress Relaxed InGaN Buffer Layers”, Applied Physics Letter, 101, 121106 (2012). DOI: 10.1063/1.4753949
  97. Yuh-Renn Wu*, Ravi Shivaraman, Kuang-Chung Wang, and James S. Speck, “Analyzing Physical Properties of InGaN Multiple Quantum Well LEDs from Nano Scale Structure”, Applied Physics Letter, 101, 083505, 2012. DOI:10.1063/1.4747532.
  98. Chang-Pei Wang and Yuh-Renn Wu*, “Study of Optical Anisotropy in Nonpolar and Semipolar AlGaN Quantum Well Deep Ultraviolet Light Emission Diode” Journal of Applied Physics, 112, 033104, 2012. DOI: 10.1063/1.4742050（2012, JAP Aug Top 20 most downloaded in this month）
  99. Yoshinobu Kawaguchi*, Chia-Yen Huang, Yuh-Renn Wu, Qimin Yan, Chih-Chien Pan, Yuji Zhao, Shinichi Tanaka, Kenji Fujito, Daniel Feezell, Chris G. Van de Walle, Steven P. DenBaars, and Shuji Nakamur, “Influence of polarity on Carrier Transports of Semipolar Multiple-Quantum-Well (20-2-1) and (20-21) Light-Emitting Diodes”, Appl. Phys. Lett. 100, 231110 (2012) DOI:10.1063/1.4726106 (2012, June, Top most downloaded,  “Editor’s Picks of 2012.)
  100. Chi-Kang Li and Yuh-Renn Wu*,  “Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs” IEEE Trans Electron Dev., 59 (2), pp400-407, (2012). DOI:10.1109/TED.2011.2176132 (2013, 2014 JCR highly cited papers (top 1%) of this journal)
  101. H.-A. Chin, I-C. Cheng*, C.-K. Li, Y.-R. Wu, J. Z. Chen, W.-S. Lu, W.-L. Lee, “The electrical properties of modulation-doped rf-sputtered polycrystalline MgZnO/ZnO heterostructures”, Journal of Physics D: Applied Physic, 44, 455101, (2011). DOI:10.1088/0022-3727/44/45/455101
  102. Jeng-Wei Yu , Chi-Kang Li , C. Y. Chen , Yuh-Renn Wu , Li-Jen Chou, and Lung-Han Peng*, “Transport properties of gallium nitride nanowire metal-oxide-semiconductor transistor”, Appl. Phys. Lett, 99, 152108, (2011). DOI:10.1063/1.3651332
  103. Liang-Yi Chen, Hung-Hsun Huang, Chun-Hsiang Chang, Ying-Yuan Huang, Yuh-Renn Wu, and JianJang Huang*, “Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays”, Optics Express, 19,  pp. A900-A907, (2011). DOI:10.1364/OE.19.00A900
  104. Hung-Hsun Huang, I-Lin Lu and Yuh-Renn Wu*,“Study of thermoelectric properties of indium nitride nanowire”, Physica status solidi (a), 208, pp1562-2565, 2011. (SCI)  DOI 10.1002/pssa.201001047
  105. I-Lin Lu, Yuh-Renn Wu*, and Jasprit Singh, “Study of Carrier Dynamics and Radiative Efficiency in InGaN/GaN LEDs with Monte Carlo Method” Physica status solidi (c), 8, pp2393-2395, 2011, DOI: 10.1002/pssc.201001054
  106. Yu-Hsuan Sun, Yun-Wei Cheng, Szu-Chieh Wang, Ying-Yuan Huang, Chun-Hsiang Chang, Sheng-Chieh Yang, Liang-Yi Chen, Min-Yung Ke, Chi-Kang Li, Yuh-Renn Wu, and JianJang Huang*, “Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by P-type GaN Surface Texturing”, Electron Dev. Lett., 32, pp182-184, 2011.(SCI) DOI: 10.1109/LED.2010.2093503
  107. I-Lin Lu, Yuh-Renn Wu*, and Jasprit Singh, “A Study of the Role of Dislocation Density, Indium Composition on the Radiative Efficiency in InGaN/GaN Polar and Nonpolar LEDs using Drift-diffusion Coupled with a Monte Carlo Method”, Journal of Applied Physics, 108, 124508, 2010. (SCI) DOI: 10.1063/1.3524544
  108. Po-Yuan Dang and Yuh-Renn Wu*, “Optical Polarization Anisotropy of Tensile Strained InGaN/AlInN Quantum Wells for TM Mode Lasers”, J. Appl. Phys., 108, 083108, 2010. (SCI) DOI: 10.1063/1.3498805.
  109. Huai-An Chin, I-Chun Cheng*, Chih-I Huang, Yuh-Renn. Wu, Wen-Sen Lu, Wei-Li Lee, Jian Z. Chen, Kuo-Chuang Chiu, and Tzer-Shen Lin “Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process”, Journal of Applied Physics, 108, 054503, 2010. (SCI) DOI:10.1063/1.3475500
  110. Huei-Min Huang, Hung-Hsun Huang, Yuh-Renn Wu*,and Tien-Chang Lu*, “Abnormal polarization switching phenomenon in a-plane AlxGa1-xN”, Optics Express, V18, No. 21, pp21743-21749, 2010. (SCI) DOI:10.1364/OE.18.021743
  111. T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu* and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition”, Appl. Phys. Lett., 96, 211108, 2010. (SCI) DOI:10.1063/1.3429085
  112. Hung-Hsun Huang and Yuh-Renn Wu*, “Light Emission Polarization Properties of Semipolar InGaN/GaN Quantum Well”, J. Appl. Physics, Vol. 107, pp053112-1-7, 2010. (SCI) DOI:10.1063/1.3327794
  113. Hung-Hsun Huang and Yuh-Renn Wu*, “Light Emission Polarization Properties of Strained (11-22) semipolarInGaN Quantum Well”, Physica status solidi c, Vol. 7, no. 7-8, 2010. (SCI) DOI: 10.1002/pssc.200983456.
  114. Cheng-Yu Chang and Yuh-Renn Wu*, “Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum Wells”, IEEE Journal of Quantum Electronics, Vol. 46, no. 6, pp884-889, 2010. (SCI) 10.1109/JQE.2010.2040515
  115. Chih-I Huang, Huai-An Chin, Yuh-Renn Wu*, I-Chun Cheng, Jian Z. Chen, Kuo-Chuang Chiu, and Tzer-Shen Lin, “Mobility Enhancement of Polycrystalline MgZnO/ZnO Thim Film Layer with Modulation Doping and Polarization Effect”, IEEE Trans Electron Dev, Vol. 57, no.3, pp696-703, 2010. (SCI) 10.1109/TED.2009.2039527
  116. Huai-An Chin, Chih-I Huang, Yuh-Renn Wu, I-Chun Cheng, Jian Z. Chen, Kuo-Chuang Chiu, and Tzer-Shen Lin, “Influences of polarization effects in the electrical properties of polycrystalline MgZnO/ZnO heterostructure,” Mater. Res. Soc. Symp. Proc., 1201, H4.5, Nov. 2009 (EI) DOI:10.1557/PROC-1201-H04-05
  117. Hung-Hsun Huang and Yuh-Renn Wu*, “Study of Polarization Properties of Light Emitted from a-plane InGaN/GaN Quantum Well-based Light Emitting Diodes”, Journal of Applied Physics, Vol. 106, p023106, 2009. (SCI) DOI: 10.1063/1.3176964 .
  118. Kun-Mao Pan, Yun-Wei Cheng, Liang-Yi Chen, Ying-Yuan Huang, Min-Yung Ke, Cheng-Pin Chen, Yuh-Renn Wu and JianJang Huang, “Polarization dependent sidewall light diffraction of LEDs surrounded by nanorod arrays”, IEEE Photonics Technology Letters, Vol. 21, no.22, pp1683-1685, 2009. (SCI) 10.1109/LPT.2009.2031682
  119. Yuh-Renn Wu*, Chinghua Chiu, Cheng-Yu Chang, Peichen Yu, and Hao-Chung Kuo, “Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs”, IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, no. 4 , pp1226-1233, July/Aug, 2009. (SCI) DOI:10.1109/JSTQE.2009.2015583
  120. Yuh-Renn Wu*, Yih-Yin Lin, Hung-Hsun Huang, and Jasprit Singh, “Electronic and Optical Properties of InGaN Quantum Dot based Emitters for Solid State Lighting”, Journal of applied physics, vol. 105, p013117, 2009. DOI:10.1063/1.3065274 (SCI)
  121. Chih-I Huang, Yuh-Renn Wu*, I-Chun Cheng Chen, J.Z. Kuo-Chuang Chiu Tzer-Shen Lin “Mobility Study of Polycrystalline MgZnO/ZnO Thin Film Layers with Monte Carlo Method”, Computational Electronics, 2009. IWCE ’09. 13th International Workshop on, 27-29 May 2009. (EI) DOI: 10.1109/IWCE.2009.5091118
  122. Chi-Kang Li, Yuh-Renn Wu* and Jasprit Singh, “Modeling of Junction Temperature and Current Flow in High Power InGaN/GaN Light Emission Diodes Using Finite Element Methods”,  Computational Electronics, 2009. IWCE ’09. 13th International Workshop on, 27-29 May 2009. (EI) DOI: 10.1109/IWCE.2009.5091121
  123. Yuh-Renn Wu*, Peichen Yu, C.H. Chiu, Cheng-Yu Chang , and H.C. Kuo, “Analysis of Strain Relaxation and Emission Spectrum of A Free-Standing GaN-based Nanopillar”, proceeding of SPIE, Vol 7058, p70580G, 2008. (EI) DOI:10.1117/12.800658
  124. Peichen Yu , C. H. Chiu , Yuh-Renn Wu, H. H. Yen, J. R. Chen, C. C. Kao, Han-Wei Yang, H. C. Kuo, T. C. Lu, Y. W. Yeh, and S. C. Wang, ” Strain Relaxation Induced Micro-Photoluminescence Characteristics of a Single InGaN-based Nanopillar Fabricated by Focused Ion Beam Milling ” Appl. Phys. Lett., Vol 93, p081110, 2008. (SCI) DOI:10.1063/1.2965461.
  125. J. W. Chung, X. Zhao, Y.-R. Wu, J. Singh, and T. Palacios “Effect of image charges in the drain delay of AlGaN/GaN high electron mobility transistors”, Appl. Phys. Lett., vol 92, P093502, 2008. (SCI) DOI: 10.1063/1.2889498
  126. C. Y. Liu, A. Datta, N. W. Liu, Y. R. Wu, H. H. Wang, T. H. Chuang, and Y. L. Wang “Enhanced growth of anodic alumina nanochannels on Ga-ion pre-irradiated aluminum” J. Vac. Sci. Technol. B, Vol. 26, pp651-654, 2008. (SCI) DOI:10.1116/1.2890706
  127. Yuh-Renn Wu*, John M. Hinckley, and Jasprit Singh  “Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption”, Journal of Electronic Materials, Vol.37, No. 5, pp578-584, 2008. (SCI) DOI: 10.1007/s11664-007-0320-4
  128. Yuh-Renn Wu* and Jasprit Singh, “Transient Study of Self-heating Effects in AlGaN/GaN HFETs: Consequence of Carrier Velocities, Temperature, and Device Performance” J. Appl. Phys., vol. 101, p113712, 2007 (SCI). DOI: 10.1063/1.2745286
  129. S. Y. Yang, Q. Zhan, P. L. Yang, M. P. Cruz, Y. H. Chu, R. Ramesh, Y.-R. Wu, J. Singh, W. Tian, and D. G. Schlom, “Capacitance-voltage characteristics of BiFeO3/SrTiO3/GaN heteroepitaxial structures,” Appl. Phys. Lett., vol. 91, p022909, July, 2007.(SCI) DOI: 10.1063/1.2757089
  130. Yuh-Renn Wu*, Madhusudan Singh, and Jasprit Singh,” Device Scaling Physics and Channel Velocities in AlGaN-GaN HFETs: Velocities and Effective Gate Length”, IEEE Trans Electron Dev, 53, pp. 588-593, April, 2006. (SCI) DOI: 10.1109/TED.2006.870571
  131. Yuh-Renn Wu*, Madhusudan Singh, and Jasprit Singh,” Sources of Transconductance Collapse in III-V nitrides – Consequences of velocity-field relations and source-gate design” , IEEE Trans Electron Dev, vol. 52, no. 6, pp.1048–1054, June, 2005. (SCI) DOI:10.1109/TED.2005.848084
  132. Madhusudan Singh, Yuh-Renn Wu and Jasprit Singh,” Velocity Overshoot Effects and Scaling Issues in III-V Nitrides “, IEEE Trans Electron Dev, 52, 3, pp 311-316, 2005. (SCI) DOI:10.1109/TED.2005.843966
  133. Yuh-Renn Wu* and Jasprit Singh,” Polar Heterostructure for Multi-function Devices: Theoretical Studies”, IEEE Trans Electron Dev, 52, 2,284-293, 2005. (SCI) DOI: 10.1109/TED.2004.842546
  134. Yuh-Renn Wu* and Jasprit Singh, “Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors”. Appl. Phys. Lett., 85, 2004, pp 1223-1225. (SCI) DOI: 10.1063/1.1784039
  135. Madhusudan Singh, Yuh-Renn Wu and Jasprit Singh, “Examination of LiNbO3 / nitride heterostructures”. Solid-State Electron, 47, 12, 2003, pp 2155-2159. (SCI) DOI:10.1016/S0038-1101(03)00189-8
  136. Yuh-Renn Wu*, Madhusudan Singh and Jasprit Singh. “Gate leakage suppression and contact engineering in nitride heterostructures”, J. Appl. Phys., 94, 5826-5831, 2003. (SCI) DOI: 10.1063/1.1618926
  137. A. Datta, Yuh-Renn Wu, Y. L. Wang, “Real-time Observation of Ripple structure formation on a diamond surface under focused ion-beam bombardment”, Physical Review B, 63, 125407, 2001. DOI: 10.1103/PhysRevB.63.125407
  138. A. Datta, Yuh-Renn Wu, Y. L. Wang, “Gas-assisted focused-ion-beam lithography of a diamond (100) surface”, Appl. Phys. Lett. 75, pp2677, 1999. (SCI) DOI:10.1063/1.125116

Conference Papers

  1. Yuh-Renn Wu*1, Chi-Kang Li1, Hung-Hsiang Chen1, Shuan Wang1, James S. Speck2, Marcel Filoche3, and Claude Weisbuch2,3 “Application of Localization landscape theory in modeling InGaN based Green LEDs with random alloy fluctuation and AlGaN based UVLEDs.”, Photonic West 2018, San Francisco, Jan. 27-Feb. 2, 2018 (Invited talk)
  2. Marcel Filoche*, Marco Piccardo, H, Chi-Kang Li, Yuh-Renn Wu, Svitlana Mayboroda, Jean-Marie Lentali, Lucio Martinelli, Jacques Peretti, Claude Weisbuch, Carrier localization induced by alloy disorder in nitride devices:theory and experiments, Photonic West 2018, San Francisco, Jan 27-Feb. 2, 2018.
  3. Chia-Ying Su, Meng-Che Tsai, Keng-Ping Chou, Huang-Hui Lin, Ming-Yen Su, Hsin-Chun Chiang, Yuh-Renn Wu, Yean-Woei Kiang, Chih-Chung Yang*, “Unintentionally formed thin barriers of elevated Al contents in a deep-UV AlGaN quantum well for generating favored compressive strain, “Photonic West 2018, San Francisco, Jan 27-Feb. 2, 2018.
  4. Yuh-Renn Wu*, “Study of Carrier Transport and Recombination in Disordered InGaN Quantum Well Light Emitting Diode With Localization Landscape Theory”, 11th International Symposium on Semiconductor Light Emitting Devices, (ISSLED) 2017, Banff, Canada, Oct 8-12, 2017. (invited talk)
  5. SF Chen and YR Wu, “A New Design of Intermediate Band Solar Cell with Multi-Layer MoS2 Nanoribbons”, Oral Presentation, EU PVSEC 2017, Amsterdam, Netherland, Sep25-28, 2017
  6. Shuan Wang , Chi-Kang Li, Marcel Filoche, Claude Weisbuch , James S. Speck, and Yuh-Renn Wu*, “3D Modeling of Green InGaN QW LEDs with Random Alloy fluctuation,  12th International Conference on Nitride Semiconductors, Strasbourg, France, July 24-28, 2017
  7. Chih-Wei Hsu and Yuh-Renn Wu*, “Analysis of Peak Field Reduction in AlGaN/GaN HFETs with a Curved Field Plate”. 12th International Conference on Nitride Semiconductors, Strasbourg, France, July 24-28, 2017
  8. Bastien Bonef, Micha N Fireman, Richard Cramer, Marco Piccardo, Yuh-Renn Wu, Claude Weisbuch, James S Speck, “Atom probe tomography nanometer scale characterization of alloy fluctuations in ternary nitrides” 12th International Conference on Nitride Semiconductors, Strasbourg, France, July 24-28, 2017
  9. Hung-Hsiang Chen , Shuan Wang , Yi-Keng Fu, and Yuh-Renn Wu*, “2D Transport Modeling and Optimization of p-type and n-type AlGaN Supper Lattice for Deep UV Light Emitting Diodes with Localized landscape theory”, 12th International Conference on Nitride Semiconductors, Strasbourg, France, July 24-28, 2017.
  10. Jun-Yu Huang, Te-Jen Kung, and Yuh-Renn Wu*, “Modeling of Carrier Transport and Exciton Diffusion in Organic Light Emitting Diodes with Different Doping Effects” NUSOD 17 – 17th International Conference on Numerical Simulation of Optoelectronic Devices, Copenhagen, DenMark July 24-28, 2017.
  11. Yuh-Renn Wu*, Chi-Kang Li, Marco Piccardo, Lucio Martinelli, Marcel Filoche, James S. Speck and Claude Weisbuch, “Challenges in Optoelectronic Device Simulation” (TMCS II), Cork, Ireland, Dec. 7-9, 2016 (invited talk)
  12. Yuh-Renn Wu*, Chi-Kang Li, Marco Piccardo, Lucio Martinelli, Marcel Filoche, James S. Speck and Claude Weisbuch, “Impact of Atomic Disorder in InGaN MQW LEDs”International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, U.S.A, Oct 2-7, 2016 (invited talk) .
  13. Hao-Tsung Chen, Charng-Gan Tu, Yu-Feng Yao, Chun-Han Lin, Yuh-Renn Wu, Yean-Woei Kiang and Chih-Chung Yang*,  “Combining High Hole Concentration in p-GaN and High Hole Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure” International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, U.S.A, Oct 2-7, 2016.
  14. Marcel Filoche*, Svitlana Mayboroda, Marco Piccardo, Yuh-Renn Wu, James Speck and Claude Weisbuch, “A New Approach to Carrier Localization in Disordered Random Alloy Structures”,  International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, U.S.A, Oct 2-7, 2016. (invited talk) .
  15. Yen-Chang Chen, Te-Jen Kung and Yuh-Renn Wu*, “Modeling and Optimization of InGaN Blue Light Laser Diodes”, International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, U.S.A, Oct 2-7, 2016.
  16. Yuh-Renn Wu* and  Kuan-Ying Ho “Numerical Modeling and Optomization of PEDOT:PSS/Si Nanostructure Hybrid Solar Cell” , PIERS 2016 in Shanghai, China, Aug. 7-11. Invited paper
  17. Kuan-Ying Ho and Yuh-Renn Wu*, “Numerical Analysis and Optimization of PEDOT:PSS/Si Nanowire Hybrid Solar Cells”, 2016 NUSOD, Sydney, Austria, July 11-15.
  18. Te-Jen Kung, Jun-Yu Huang, and Yuh-Renn Wu*, “Modeling of Random Dopant Effects of Organic Light Emitting Diode with Two Dimensional Simulation”, 2016 NUSOD, Sydney, Austria, July 11-15.
  19. Yen-Chang Chen, Te-Jen Kung, and Yuh-Renn Wu*, “Optimization of the Gain Curve of the InGaN Blue Light Laser Diode”, 2016 NUSOD, Sydney, Austria, July 11-15.
  20. Kuan-Ying Ho, I-Hsin Lu, Yuh-Renn Wu* “Development of numerical modeling program for organic/inorganic hybrid solar cells by including tail/interfacial states models”, 2016 SPIE Photonic West, San Francisco, Feb 13-18, 2016.  OPTO, 974308-1~974308-7. DOI: 10.1117/12.2211904
  21. Chi-Kang Li, Li-Shuo Lu, Chen-Kuo Wu, Chung-Cheng Hsu, Yuh-Renn Wu*, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light-emitting diodes with V-shaped pits” 2016 SPIE Photonic West, San Francisco, Feb 13-18, 2016.  
  22. Claude Weisbuch, Marco Piccardo, Marcel Filoche, Chi-Kang Li, Yuh-Renn Wu, Lucio Martinelli, J. Perretti, and James S. Speck, “3D modeling of intrinsic disorder in InGaN/GaN heterostructures”, 2016 SPIE Photonic West, San Francisco, Feb 13-18, 2016. (Invited Conference Paper).
  23. Chen-Kuo Wu, Chung-Cheng Hsu, Chi-Kang Li, Tien-Chang Lu, and Yuh-Renn Wu*,” 3D numerical analysis of carrier transport in light emission diodes with V-shaped pits“, ISGN-6, Hamamatsu, Japan, 11/8-11/13, 2015.
  24. Chen-Kuo Wu, Chi-Kang Li, and Yuh-Renn Wu, “Investigation of Carrier Transport in Nitride Based LED by Considering the Random Alloy Fluctuation”, 14th International Conference on Numerical Simulation of Optoelectronic Devices, Taipei, Taiwan, Sep. 7-11, 2015.  
  25. Chung-Cheng Hsu, Chen-Kuo Wu, Chi-Kang Li, Tien-Chang Lu, and Yuh-Renn Wu,”3D Finite Element Strain Analysis of V-Shaped Pits in Light Emitting Diodes”, 14th International Conference on Numerical Simulation of Optoelectronic Devices, Taipei, Taiwan, Sep. 7-11, 2015.
  26. I-Hsin Lu and Yuh-Renn Wu, “Modeling for Carrier Transportation in Organic Light-emitting Diode by Considering Effective Tail States”, 14th International Conference on Numerical Simulation of Optoelectronic Devices, Taipei, Taiwan, Sep. 7-11, 2015.
  27. Hung Lin, Chi-kang Li and Yuh-Renn Wu,”Development of Quantum Transport Simulation Model by Considering Phonon Scattering in Nanowire Device”, 14th International Conference on Numerical Simulation of Optoelectronic Devices, Taipei, Taiwan, Sep. 7-11, 2015.
  28. Xinhui Chen and Yuh-Renn Wu, “Designing of p-AlGaN super lattice structure as the p-contact and transparent layer in AlGaN UVLEDs”, 14th International Conference on Numerical Simulation of Optoelectronic Devices, Taipei, Taiwan, Sep. 7-11, 2015.
  29. Kuan-Ying Ho, Chung-Yu Hong, Peichen Yu, and Yuh-Renn Wu*, “ Optimization of All-Back-Contact GaAs Solar Cells”, 14th International Conference on Numerical Simulation of Optoelectronic Devices, Taipei, Taiwan, Sep. 7-11, 2015.
  30. Yuh-Renn Wu*, Chen-Kuo Wu, Chi-Kang Li, David A. Browne, and James S. Speck, “Study of Percolation Transport in the InGaN/AlGaN LEDs with Random Alloy Fluctuation”, CLEO-PR 2015, Busan, Korea. 8/24-8/28 (Invited Conference Paper)
  31. I-Hsin Lu and Yuh-Renn Wu, “Modeling for carrier transportation in organic light-emitting diode by considering effective tail states” 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015. 7/1-7/3 Kyoto, Japan
  32. Yuh-Renn Wu, Chen-KuoWu, Chung-ChengHsu, and JamesS.Speck, ”Multidimensional Numerical Modeling on the Influence of Random Alloy Fluctuation in InGaN Quantum Well LED to the Transport Behavior”, Applied Mathematics and Simulation for Semiconductors, WIAS, Berlin, Germany, March 11-13, 2015. (Invited Conference Paper)
  33. Hui-Hsin Hsiao, Hung-Chun Chang, and Yuh-Renn Wu*,“Design of nano-pattern reflectors for thin-film solar cells based on three-dimensional optical and electrical modeling”, SPIE Photonic West, San Francisco, CA, Feb.7-12, 2015.
  34. Chen-Kuo Wu, Tsung-Jui Yang, Claude Weisbuch, James S. Speck, and Yuh-Renn Wu*, “Carrier transport in the nonpolar and c-plane InGaN quantum well by considering the indium fluctuation effects”, SPIE Photonic West, San Francisco, CA, Feb.7-12, 2015.
  35. Xinhui Chen and Yuh-Renn Wu*, “Numerical study of current spreading and light extraction in deep UV light-emitting diode, SPIE Photonic West, San Francisco, CA, Feb.7-12, 2015.
  36. Chen Kuo Wu, James S. Speck, and Yuh-Renn Wu*, “Analysis of Electron Percolation in the RandomAlloy AlGaN Barrier Layer” 10th  International Symposium on Semiconductor Light Emitting Devices, Kaohsiung, Taiwan, Dec. 14-19, 2014.
  37. Chung-Cheng Hsu and Yuh-Renn Wu*, “3D Finite Element Strain Analysis of InGaN Quantum Well with Indium Fluctuations”, 10th  International Symposium on Semiconductor Light Emitting Devices, Kaohsiung, Taiwan, Dec. 14-19, 2014.
  38. Hui-Hsin Hisao, Hung-Chun Chang, and Yuh-Renn Wu*, “Design of Light Trapping Nanopatterned Solar Cells Based on Three Dimensional Optical and Electrical Modeling”, 14th International Conference on Numerical Simulation of Optoelectronic Devices,  Palma de Mallorca, Spain, Sep. 1-4, 2014.
  39. Chao-Wei Wu and Yuh-Renn Wu*, “Thermoelectric Characteristic of the Rough InN/GaN CoreShell Nanowire”, 2014 International Workshop on nitride semiconductor, Wroclaw, Poland, Aug.24-29, 2014.
  40. Tsung-Jui Yang, Yen-Chun Lin, James S. Speck, and Yuh-Renn Wu*, “3D analysis of Random Alloy Fluctuation in InGaN Quantum Well to the Carrier Transport, Tunneling, and Efficiency” 2014 International Workshop on nitride semiconductor, Wroclaw, Poland, Aug.24-29, 2014.
  41. David Browne, Baishakhi Mazumder, Yuh-Renn Wu and James S. Speck, “Investigation of Electron Transport through InGaN Quantum Well Structures”, 14th  Electronic Materials Conference, Santa Barbara,  USA, June 25-27, 2014
  42. Erin Kyle, Stephen Kaun, Yuhrenn Wu, and James Speck, “Dislocation-Related Scattering in High Mobility GaN Grown by Ammonia-Based Molecular Beam Epitaxy” 14th  Electronic Materials Conference, Santa Barbara,  USA, June 25-27, 2014
  43. Chi-Kang Li, Maarten Rosmeulen, Eddy Simoen, and Yuh-Renn Wu*, “Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDs by Modulation of Transparent Conducting Layer”, WLED-5, Jeju, Korea, June 1-5, 2014.
  44. Tsung-Jui Yang, Jim. Speck, and Yuh-Renn Wu*, “Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model,” SPIE Photonic West, San Francisco, CA, Feb. 2014
  45. Da-Wei Lin, Yuh-Renn Wu, Yu-Ting Kang, Shu-ting Yeh, Yu-Lin Tsai, Gou-Chung Chi, Hao-Chung Kuo, “Analyzing the correlation between nanoscale indium fluctuation in multiple quantum wells and efficiency droop behavior for InGaN-based light-emitting diodes grown on GaN substrate and sapphire,” SPIE Photonic West, San Francisco, CA, Feb. 2014
  46. Yuh-Renn Wu*, “ Influences of nanoscale indium fluctuation in the InGaN quantum well LED to the carrier transport, radiation efficiency, and droop effect” ,2013 EMN Fall Meeting, Orlando, FL, Dec. 7-10, 2013. (Invited Paper)
  47. Shu-Ting Yeh, Kai-Lun Chi , Jin-Wci Shi, and Yuh-Renn Wu*,“Numerical Study on the Optimization of a GaN-Based Dual Color Light-Emitting Diode with P-Type Insertion Layer for Balancing Two-Color Intensities”,  The 10th International conferences on nitride semiconductor, National Harbor, MD, Aug. 25-30, 2013.
  48. David Browne, Yuh-Renn Wu, and James S. Speck, “Investigation of Electron Transport through Unipolar InGaN Quantum Well Structures” ,The 10th International conferences on nitride semiconductor, National Harbor, MD, Aug. 25-30, 2013.
  49. Digbijoy N. Nath, Zhichao Yang, Pil S. Park, Chun Y. Lee, Yuh R. Wu, and Siddharth Rajan, “Unipolar Vertical Transport Characteristics in III-Nitrides” The 10th International conferences on nitride semiconductor, National Harbor, MD, Aug. 25-30, 2013.
  50. Chi-Kang Li and Yuh-Renn Wu, “Three Dimensional Numerical Study on the Efficiency of a Core-shell InGaN/GaN Multiple Quantum Well Nanowire LED”, 13th International Conference on Numerical Simulation of Optoelectronic Devices, Vancouver, Canada, Aug. 19-22, 2013.
  51. Yuh-Renn Wu, Shu-ting Yeh, Da-Wei Lin, Chi-kang Li, Hao-Chung Kuo, and James S. Speck, “Influences of Indium Fluctuation to the Carrier Transport, Auger Recombination, and Efficiency Droop”, 13th International Conference on Numerical Simulation of Optoelectronic Devices, Vancouver, Canada, Aug. 19-22, 2013.
  52. Shu-Ting Yeh and Yuh-Renn Wu , “Study of Light Emission Polarization Properties of Semipolar InGaN/GaN Quantum Well Under Different Strain Conditions”, CLEO-PR, Kyoto, Japan, June 30-July 4, 2013.
  53. Yu-Min Liao, Hsiao-Lun Wang, Yuh-Renn Wu*, and Chao-Hsin Wu, “The Dependence of Base Dynamics and Current Gain in the InGaAs/GaAs Light Emitting Transistors” 40thinternational symposium on compound semiconductor, Kobe, Japan, May 19-23, 2013.
  54. Chun-Yao Lee, Huai-Te Pan, Yu-Chih Cheng, Yuh-Renn Wu, Peichen Yu, “Optical and electrical characteristics of silicon nanocone: Polymer hybrid heterojunction solar cells” SPIE Photonic West, San Francisco,  CA, Feb 2-7, 2013.
  55. Pei-Wen Lin, Sih-Chen Lu, Yu-Min Liao, Chin-Yi Chen, Yuh-Renn Wu, Yun-Chorng Chang, “Economic fabrication of optoelectronic devices with novel nanostructures” SPIE Photonic West, San Francisco,  CA, Feb 2-7, 2013.
  56. Pradeep N. Senanayake, Chung-Hong Hung, Alan Farrell, David A. Ramirez, Joshua N. Shapiro, Chi-Kang Li, Yuh-Renn Wu, Majeed Hayat, and Diana L. Huffaker, “Nanopillar optical antenna avalanche detectors for the development of single photon detectors”, SPIE Photonic West, San Francisco,  CA, Feb 2-7, 2013.
  57. Yuh-Renn Wu*, Ravi Shivaraman, Kuang-Chung Wang, Chih-Chien Pan, and James S Speck, “Predicting Physical Properties of InGaN LEDs from Atomic Scale Structure”, International Workshop on Nitride Semiconductors, Sapporo, Japan, Oct. 14-19, 2012
  58. Chia-Yen Huang, Yuji Zhao, Qimin Yan, Yoshinobu Kawaguchi, Yu-Renn Wu, Daniel F. Feezell, Chris G. van de Walle, James S. Speck, Steven P Denbaars, and Shuji Nakamura, “ Carrier transports in semipolar multiple-quantumwells light-emitting diodes”, International Workshop on Nitride Semiconductors, Sapporo, Japan, Oct 14-19, 2012
  59. Ingrid L. Koslow, Matthew T. Hardy, Po shan Hsu, Michael Cantore, Stuart Brinkley, Po-Yuan Dang, Yuh-Renn Wu, Erin C. Young, Feng Wu, Alexey Romanov, Shuji Nakamura, Steve, P. Denbaars, and James S. Speck,”Semipolar LongWavelength Light Emitting Diodes  Grown on Stress Relaxed InGaN Buffer Layers”, International Workshop on Nitride Semiconductors, Sapporo,   Japan, Oct 14-19, 2012
  60. Jeng-Wei Yu,  Chi-Kang Li,  Po-Chun Yeh,  Yuh-Renn Wu,  and Lung-Han Peng*, “Ga2O3/GaN single nanowire MOSFET with cut-off frequency ~150GHz”, International Workshop on Nitride Semiconductors, Sapporo,   Japan, Oct 14-19, 2012
  61. Chi-Kang Li,  Jeng-Wei Yu,  Lung-Han Peng,  and Yuh-Renn Wu*, “Study on 50nm Gate Length of Ga2O3/GaN Nanowire Field Effect Transistor”, International Workshop on Nitride Semiconductors, Sapporo,   Japan, Oct 14-19, 2012
  62. Chi-Kang Li,  Hung-Chih Yang,  Ta-Cheng Hsu,  Yu-Jiun Shen,  Ai-Sen Liu,  and Yuh-Renn Wu*, “Study on Electrical Properties of a Coreshell InGaN/GaN Multiple Quantum Wells Nanowire LED”, International Workshop on Nitride Semiconductors, Sapporo,   Japan, Oct 14-19, 2012
  63. Chin-Yi Chen and Yuh-Renn Wu*, “Studies of Scaling Issue in Tri-gate AlGaN/GaN Nanowire Transistors”, 12th Electronic Materials Conference, University Park,  PA, June 20-22, 2012
  64. Yu-Chih Cheng,  Ting-Gang Chen,  Feng-Yu Chang,  Bo-Yu Huang,  Huai-Te Pan,  Peichen Yu,  Chi-Kang Li,  and Yuh-Renn Wu, “Fabrication and Modeling of Large-Scale Silicon Nanowire Solar Cells for Thin-Film Photovoltaics”, 38th IEEE Photovoltaic Specialists Conference, Austin,  TX, June 3-8, 2012
  65. Ming-Han Hsieh,  Yuh-Renn Wu*,  and Jasprit Singh, “The Effect of Tailoring Electron/Hole Blocking Layers on the Photovoltaic Performance of the Single-Junction Solar Cells”, 38th IEEE Photovoltaic Specialists Conference, Austin,  TX, June 3-8, 2012
  66. Ming-Han Hsieh and Yuh-Renn Wu*, “Numerical Modeling of InxGa1-xN/Silicon Multijunction Tandem Solar Cell”, 38th IEEE Photovoltaic Specialists Conference, Austin,  TX, June 3-8, 2012
  67. Kuang-Chung Wang and Yuh-Renn Wu*, Transition Rate in the InGaN Quantum Dot Intermediate-Band Solar Cell, 38th IEEE Photovoltaic Specialists Conference, Austin,  TX, June 3-8, 2012
  68. Yuh-Renn Wu*,  Chang-Pei Wang,  Kuang-Chung Wang,  and James S. Speck, Influences of Indium Fluctuation to carrier transport and the Current-voltage Turn-on Behavior in the InGaN Quantum Well LEDs, CLEO: 2012, San Jose,  CA, May 6-11, 2012
  69. Chang-Pei Wang and Yuh-Renn Wu*, Study of Optical Anisotropy of c-plane/m-plane Ultra-violet LED and Laser Diode by k.p Method, CLEO: 2012, San Jose,  CA, May 6-11, 2012
  70. Kuang-Chung Wang and Yuh-Renn Wu*, Intersubband and intrasubband transition in InGaN quantum dot for solar cell application, SPIE Photonic West, San Francisco,  CA, Jan. 22-27, 2012
  71. Chi-Kang Li and Yuh-Renn Wu*, Study of enhancement for the current spreading effect in vertical GaN/InGaN LEDs, SPIE Optics + Photonics 8123-61, San Diego,  CA, Aug 20-15, 2011
  72. Yuh-Renn Wu*,  Chi-Kang Li,  Chao-wei Wu,  and Jasprit Singh, Study of Carrier Leakage Hot Carriers and Radiative Efficiency of InGaN LEDs with Monte Carlo Method, International Conference on Nitride Semiconductors, Glasgow,  UK, July 10-15, 2011
  73. Guan-Jung Lai,  Chi-Kang Li,  and Yuh-Renn Wu*, Study of Light Extraction Efficiency of Vertical InGaN Light Emitting Diodes with Different Textured Surfaces and Electrode Contacts, International Conference on Nitride Semiconductors, Glasgow,  UK, July 10-15, 2011
  74. Chi-Kang Li,  Jeng-Wei Yu,  Lung-Han Peng,  and Yuh-Renn Wu*, Scaling Performance Study of Ga2O3/GaN Nanowire Field Effect Transistor with 3D Finite Element Solver, Asian-pacific wide bandgap workshop (APWS), Toba,  Mie,  Japan, May 22-26, 2011
  75. Yuh-Renn Wu*,  Chi-kang Li,  I-Lin Lu,  and Jasprit Singh, Study of Vertical and Lateral Carrier Dynamic in the InGaN/GaN Quantum Well LEDs for the Defect Density Carrier Leakage and Hot Electron Effect with Monte Carlo Method, Asian-pacific wide bandgap workshop (APWS), Toba,  Mie,  Japan, May 22-26, 2011
  76. Hung-Hsun Huang and Yuh-Renn Wu*, Thermoelectric properties of InGaN/GaN superlattice, MRS 2011 Spring Meeting, San Francisco,  CA, April 22-27, 2011
  77. Chi-Kang Li and Yuh-Renn Wu*, Current spreading effect in vertical GaN/InGaN LEDs, SPIE Photonic West, San Francisco,  CA, Jan 22-27, 2011
  78. Jeng-Wei Yu,  Yuh-Renn Wu,  Jian-Jang Huang,  and Lung-Han Peng*, 100GHz depletion-mode Ga2O3/GaN single nanowire MOSFET by photo-enhanced chemical oxidation method, International Electron Devices Meeting (IEDM) 2010, San Francisco,  CA, Dec. 6-8, 2010
  79. Yen-Chun Lee,  Hung-Hsun Huang,  Yuh-Renn Wu,  and Peichen Yu*, Manipulative Polarization of a-plane InGaN/GaN Photonic Crystals for Enhanced Spontaneous Emission, 16th Microoptics conference (MOC), Hsinchu,   Taiwan, Oct. 30-Nov. 3, 2010
  80. Jeng-Wei Yu,  Yuh-Renn Wu,  Jian-Jang Huang,  and Lung-Han Peng*, 75GHz Ga2O3/GaN Single Nanowire Metal-Oxide-Semiconductor field-effect Transistors, IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) 2010, Monterey,  CA, Oct. 3-6, 2010
  81. Yen-Chun Lee,  Hung-Hsun Huang,  Yuh-Renn Wu,  and Peichen Yu*, Manipulative Polarization of a-plane InGaN/GaN Photonic Crystals for Enhanced Spontaneous Emission, International conference on Solid State Devices and Materials (SSDM), Tokyo,  Japan, Sept. 22-24, 2010.
  82. I-Lin Lu,  Yuh-Renn Wu*,  and Jasprit Singh, Study the role of dislocation indium composition and radiative efficiency on the InGaN/GaN LEDs with Monte Carlo method, International Workshop of Nitride Semiconductor (IWN), Tampa,  FL, Sept. 19-24, 2010
  83. Hung-Hsun  Huang and Yuh-Renn Wu*, Study of Phonon Properties of Indium Nitride, International Workshop of Nitride Semiconductor  (IWN), Tampa,  FL, Sept. 19-24, 2010
  84. Po-Yuan Deng,  Hung-Hsun Huang,  and Yuh-Renn Wu*, Study of Polarization Properties of Light Emitted from Tensile Strained InGaN/AlInN Quantum Well , CLEO 2010, San Jose,  CA, May 16-21, 2010
  85. Yuh-Renn Wu* and Pei-Cheng Ku, Nonpolar InGaN quantum dots for semiconductor quantum light sources, SPIE Photonic West, San Francisco,  CA, Jan 23-28, 2010
  86. I-Lin Lu,  Yuh-Renn Wu*,  John Hinckley,  and Jasprit Singh, Role of interface roughness on lateral transport in InGaN/GaN LEDs: diffusion length dislocation spacing and radiative efficiency, SPIE Photonic West, San Francisco,  CA, Jan 23-28, 2010
  87. Yuh-Renn Wu*,  Hung-Hsun Huang,  Cheng-Yu Chang,  and Chi-Kang Li,  Strain Engineering in InGaN/GaN Light Emitting Diodes, Internal Workshop of Physics on Semiconductor Devices, New Delhi,  India, Dec15-19, 2009
  88. Chi-Kang Li and Yuh-Renn Wu*, Three Dimensional Modeling of Junction Temperature and Current flow in High Power InGaN/GaN Light Emission Diodes Using Finite Element Methods, 2nd White LEDs 2009, Taipei,  Taiwan, Dec. 13-16, 2009
  89. C-Y. Yeh,  I-C. Cheng*,  and Y.-R. Wu, Investigation of polarization effect of array of cylindrical rods by Monte-Carlo method, 2nd White LEDs 2009, Taipei,  Taiwan, Dec. 13-16, 2009
  90. Po-Yuan Dang,  Hung-Hsun Huang,  and Yuh-Renn Wu*, Light Emission Polarization Properties of a Tensile strained InGaN/AlInN Quantum Well, 2nd White LEDs 2009, Taipei,  Taiwan, Dec. 13-16, 2009
  91. Huai-An Chin,  Chih-I Huang,  Yuh-Renn Wu,  I-Chun Cheng*,  Jian Z. Chen,  Kuo-Chuang Chiu,  and Tzer-Shen Lin, Influences of Polarization Effects in the Electrical Properties of Polycrystalline MgZnO/ZnO Heterostructure, MRS 2009 Fall Meeting, Boston,  MA, Nov. 30 – Dec. 4, 2009
  92. Hung-Hsun Huang and Yuh-Renn Wu*, Study of Light Emission Polarization Properties of Strained inGaN Alloy Films on GaN Substrates With Different Growth Orientations, International Conference on Nitride Semiconductors (ICNS), JeJu,   Korea, Oct 18-23, 2009
  93. Wei Lun Oo,  Heribert Eisele,  George I. Haddad,  Yuh-Renn Wu,  Roger D. Pollard, Schottky Barrier Heights on AlGaN/GaN Heterojunctions and Their Effect on High-Performance GaN TUNNETT Devices., 2nd UK/Europe-China Workshop on Millimetre Waves and Terahertz Technologies, Ruthford Appleton Labortarory,  UK, Oct. 19-21, 2009
  94. Jacob Melby*,  Mahak Khandelwal1,  Robert Davis,  and Yuh-Renn Wu, Mechanism of Interaction between Hydrogen and the Two Dimensional Electron Gas in AlGaN/GaN High Electron Mobility Transistors, Electronic Material Conference, Penn State University, June 24-26, 2009
  95. Hung-Hsun Huang and Yuh-Renn Wu*, Light Emission Polarization Properties of a-plane InGaN/GaN Quantum Wells, CLEO 09, Baltimore,  MD, May 31-June 5, 2009
  96. Cheng-Yu Chan g and Yuh-Renn Wu*, Analysis of Etching Depth Dependence of Emission Properties from InGaN/GaN Light Emitting Diodes with Nanohole Arrays: Roles of Strain Relaxation and Surface States, CLEO 09, Baltimore,  MD, May 31-June 5, 2009
  97. ChingHua Chiu,  Peichen Yu,  H. C. Kuo*,  T. C. Lu,  S. C. Wang,  C. Y. Chang,  Y. R. Wu, Strain Relaxation and Emission Characteristics of Size-Dependent InGaN/GaN Nanorod Arrays, CLEO 09, Baltimore,  MD, May 31-June 5, 2009
  98. Chih-I Huang,  Yuh-Renn Wu*,  I-Chun Cheng,  Jian Z. Chen,  Kuc-Chuang Chiu,  and Tzer-Shen Lin, Mobility Study of Polycrystalline MgZnO/ZnO Thin Film Layers with Monte Carlo Method, 13th Internal workshop on Computational Electronics 2009, Beijing,  China, May 27-29, 2009
  99. Chi-Kang Li,  Yuh-Renn Wu*,  and Jasprit Singh, Modeling of Junction Temperature and Current flow in High Power InGaN/GaN Light Emission Diodes Using Finite Element Methods, 13th Internal workshop on Computational Electronics 2009, Beijing,  China, May 27-29, 2009
  100. Hung-hsun Huang,  and Yuh-Renn Wu*, Light Emission Polarization Properties of a-plane InGaN/GaN Quantum Wells, APS march meeting, Pittsburgh,  PA, March 16–20, 2009
  101. Jacob Melby*,  Jason Gu,  Li Huang,  Yuh-renn Wu,  Lisa Porter,  Robert Davis, Reduction of the Specific Contact Resistance in p-type GaN-based Devices via Polarization Doping, APS march meeting, Pittsburgh,  PA, March 16–20, 2009
  102. Jason Gu*,  Mahak Khandelwal,  Jacob Melby,  Michael Steeves,  Yuh-Renn Wu,  Robert Lad,  and Robert F. Davis, Mechanism of Interaction between Hydrogen and the Two-dimensional Electron Gas in AlGaN/GaN High Electron Mobility Transistors, APS march meeting, Pittsburgh,  PA, March 16–20, 2009
  103. Peichen Yu*,  Min-An Tsai,  Ching-Hua Chiu,  Hao-chung Kuo,  and Yuh-Renn Wu, Strain relaxation characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling, Optoelectronic Materials and Devices III, Hangzhou,  China, Oct. 27, 2008
  104. J. F. Ihlefeld*,  Z-K. Liu,  H. S. Craft,  R. Collazo,  S. Mita,  Z. Sitar,  J-P. Maria,  Y-R. Wu,  J. Singh,  W. A. Doolittle,  R. Ramesh,  and D. G. Schlom, Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band-gap semiconductors, The 15th International Workshop on Oxide Electronics., Estes Park,   Colorado., Sep. 14-17, 2008
  105. Yuh-Renn Wu*,  Peichen Yu,  C.H. Chiu,  Cheng-Yu Chang,  and H.C. Kuo, Analysis of Strain Relaxation and Emission Spectrum of A Free-Standing GaN-based Nanopillar, SPIE Optics + Photonics, San Diego,  CA, Aug 10-14, 2008
  106. Yuh-Renn Wu*,  Yih-Yin Lin,  and Jasprit Singh, InGaN Light Emitters: A comparison of Quantum Dot and Quantum Well based devices, Conference on Lasers and Electro-Optics, San Jose,  CA, May 4-9, 2008
  107. Yuh-Renn Wu*,  John Hinckley,  and Jasprit Singh, Extraction of Transport Dynamics in AlGaN/GaN HFETs through Free Carrier Absorption, Electronic Material Conference, Notre Dame Unveristy,  South Bend,  IN, June 20-22, 2007
  108. H. Eisele*,  Y-R. Wu,  R. Kamoua,  and G. I. Haddad, High-Performance Negative Differential Resistance Oscillators and Combiners, The Seventeenth International Symposium on Space Terahertz Technology, Pasadena,  CA, March 21-23, 2007
  109. Yuh-renn Wu* and Jasprit Singh, How does phonon generation influence AlGaN/GaN HFETs?- Transient and steady state studies , Device Research Conference, Penn State Unveristy,  PA, June 26-28, 2006
  110. Yuh-Renn Wu* and Jasprit Singh, Polar Heterostructure for Multi-function Devices: Theoretical Studies, Device Research Conference, Notre Dame Unveristy,  South Bend,  IN, June 21-23, 2004
  111. Madhusudan Singh*,  Yuh-Renn Wu and Jasprit Singh, Velocity Overshoot Effects and Transit Times in III-V Nitrides HFETs: a Monte Carlo Study , Device Research Conference, Notre Dame Unveristy,  South Bend,  IN, June 21-23, 2004
  112. Yuh-Renn Wu*,  Madhusudan Singh and,  Jasprit Singh, Gate leakage suppression and contact engineering in nitride heterostructures:, Materials Research Society Fall Meeting, Boston,  MA, December 1-5, 2003
  113. Yuh-Renn Wu*,  Madhusudan Singh and Jasprit Singh, The metal nitride heterojunction structure – a self consistent drift diffusion charge control model, American Physical Society March Meeting, Austin,  TX, Mar. 3-7, 2003
  114. Madhusudan Singh,  Yuh-Renn Wu* and Jasprit Singh, Examination of LiNbO3 / nitride heterostructures, 9th International Workshop on Oxide Electronics, St. Petersburg,  FL, October 20-23, 2002
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