ITRI NTU DDCC 1D DEMO
This GUI interface is developed by EOSRL, ITRI.
Please contact yrwu @ itri.org.tw for more detail.
Below are examples we applied for modeling LED, MQW-LED, Schrodinger solver, k.p solver, AlGaN HFET, Infrared SL, etc...
- p-GaN 150nm 2.0e19 cm^(-3) doping hole mobility 2 cm2 /Vs
- p-AlGaN 30nm 2.0e19 cm^(-3) doping
- Last QB p-GaN 10nm 5.0e18 cm-3 doping
- 6 pairs InGaN (3nm) /GaN (10nm) intrinsic (1.0e17 cm-3 n-type)
- n-GaN 200nm doping electron mobility 150 cm2/Vs
- Nonradiative lifetime = 1.0e-7 sec
project_Itri-demo-2.7z Download:
- p-GaN 150nm 2.0e19 cm^(-3) doping hole mobility 2 cm2 /Vs
- p-AlGaN 30nm 2.0e19 cm^(-3) doping
- Last QB p-GaN 10nm 5.0e18 cm-3 doping
- 6 pairs InGaN (3nm) /GaN (10nm) intrinsic (1.0e17 cm-3 n-type)
- n-GaN 200nm doping electron mobility 150 cm2/Vs
- Nonradiative lifetime = 1.0e-7 sec
Due to 100% Polarization, carrier cannot overcome the piezo-electric barrier. However, it is possible to go through some leakage states, So we also setup Gaussian shape tail state in the simulation.
For optical model edge emission laser diode, we cannot only model optical mode in activate region, we also need to model other wave confining layers.
The 1D simulation can be easily used to design the channel and 2DEG in the HFET devices. The input file can be download here
This demonstration describe how to setup p-HFET structure.
Input file can be download here 
